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    Thermoelectric semiconductor material, thermoelectric semiconductor element using thermoelectric semiconductor material, thermoelectric module using thermoelectric semiconductor element and manufacturing method for same
    52.
    发明授权
    Thermoelectric semiconductor material, thermoelectric semiconductor element using thermoelectric semiconductor material, thermoelectric module using thermoelectric semiconductor element and manufacturing method for same 有权
    热电半导体材料，使用热电半导体材料的热电半导体元件，使用热电半导体元件的热电模块及其制造方法

    公开(公告)号：US08692103B2

    公开(公告)日：2014-04-08

    申请号：US13083666

    申请日：2011-04-11

    申请人： Toshinori Ota ,  Hiroki Yoshizawa ,  Kouiti Fujita ,  Isao Imai ,  Tsuyoshi Tosho ,  Ujihiro Nishiike

    发明人： Toshinori Ota ,  Hiroki Yoshizawa ,  Kouiti Fujita ,  Isao Imai ,  Tsuyoshi Tosho ,  Ujihiro Nishiike

    IPC分类号： H01L35/34

    CPC分类号： H01L35/34 ,  B22D11/0611 ,  H01L35/16

    摘要： A metal mixture is prepared, in which an excess amount of Te is added to a (Bi—Sb)2Te3 based composition. After melting the metal mixture, the molten metal is solidified on a surface of a cooling roll of which the circumferential velocity is no higher than 5 m/sec, so as to have a thickness of no less than 30 μm. Thus, a plate shaped raw thermoelectric semiconductor materials 10 are manufactured, in which Te rich phases are microscopically dispersed in complex compound semiconductor phases, and extending directions of C face of most of crystal grains are uniformly oriented. The raw thermoelectric semiconductor materials 10 are layered in the direction of the plate thickness. And the layered body is solidified and formed to form a compact 12. After that, the compact 12 is plastically deformed in such a manner that a shear force is applied in a uniaxial direction that is approximately parallel to the main layering direction of the raw thermoelectric semiconductor materials 10. As a result, a thermoelectric semiconductor 17 having crystal orientation in which extending direction of C face and the direction of c-axis of the hexagonal structure are approximately aligned. As a result, the crystalline orientation is improved, and the thermoelectric Figure-of-Merit is increased.

    摘要翻译： 制备金属混合物，其中向（Bi-Sb）2Te3基组合物中加入过量的Te。 在熔融金属混合物之后，熔融金属在圆周速度不高于5m / sec的冷却辊的表面上固化，从而具有不小于30μm的厚度。 因此，制造了板状的原料热电半导体材料10，其中Te富相显微分散在复合化合物半导体相中，并且大部分晶粒的C面的延伸方向均匀取向。 原料热电半导体材料10在板厚方向上层叠。 并且层叠体被固化并形成以形成紧凑体12.此后，压块12塑性变形，使得剪切力沿大致平行于原料热电偶的主层叠方向的单轴方向施加 半导体材料10.结果，具有晶体取向的热电半导体17，其中C面的延伸方向和六边形结构的c轴的方向近似对准。 结果，晶体取向得到改善，并且热电式的品质提高。

    n-TYPE DOPED PbTe AND PbSe ALLOYS FOR THERMOELECTRIC APPLICATIONS
    53.
    发明申请
    n-TYPE DOPED PbTe AND PbSe ALLOYS FOR THERMOELECTRIC APPLICATIONS 有权
    n型DOPED PbTe和PbSe合金用于热电应用

    公开(公告)号：US20140027681A1

    公开(公告)日：2014-01-30

    申请号：US13463726

    申请日：2012-05-03

    申请人： G. Jeffrey Snyder ,  Aaron LaLonde ,  Yanzhong Pei ,  Heng Wang

    发明人： G. Jeffrey Snyder ,  Aaron LaLonde ,  Yanzhong Pei ,  Heng Wang

    IPC分类号： H01L35/16

    CPC分类号： H01L35/16 ,  C01B19/007 ,  C01P2002/54 ,  C01P2006/40 ,  H01L35/34

    摘要： The present invention demonstrates that weak scattering of carriers leads to a high mobility and therefore helps achieve low electric resistivity with high Seebeck coefficient for a thermoelectric material. The inventors demonstrate this effect by obtaining a thermoelectric figure of merit, zT, higher than 1.3 at high temperatures in n-type PbSe, because of the weak scattering of carriers in the conduction band as compared with that in the valence band. The invention further demonstrates favorable thermoelectric transport properties of n-type PbTe1-xIx with carrier concentrations ranging from 5.8×1018-1.4×1020 cm−3.

    摘要翻译： 本发明表明，载流子的弱散射导致高迁移率，因此有助于实现低电阻率，对于热电材料具有较高的塞贝克系数。 本发明人通过在n型PbSe中获得高温下的热电特性值zT，在高温下由于导带中的载流子与价带相比较弱的散射而证明了这种效果。 本发明进一步证实了具有5.8×1018-1.4×1020cm-3载流子浓度的n型PbTe1-xIx的有利的热传递性质。

    Thermoelectric converter and method thereof
    56.
    发明授权
    Thermoelectric converter and method thereof 有权
    热电转换器及其方法

    公开(公告)号：US08617918B2

    公开(公告)日：2013-12-31

    申请号：US12602820

    申请日：2008-06-05

    申请人： Junya Murai ,  Takuji Kita

    发明人： Junya Murai ,  Takuji Kita

    IPC分类号： H01L21/00 ,  H01L35/16 ,  H01L35/00

    CPC分类号： H01L35/34 ,  C22C1/0491 ,  H01L35/16

    摘要： A thermoelectric converter is made of a first thermoelectric conversion material in which at least one type of second thermoelectric conversion material particles having an average size of 1 to 100 nm is dispersed. At least a part of the second thermoelectric conversion material particles is dispersed at a distance not more than the mean free path of the phonons of the first thermoelectric conversion material.

    摘要翻译： 热电转换器由第一热电转换材料制成，其中分散平均尺寸为1至100nm的至少一种第二热电转换材料颗粒。 第二热电转换材料颗粒的至少一部分以不大于第一热电转换材料的声子的平均自由程的距离分散。

    WIRELESS POWER SUPPLY DEVICE AND WIRELESS POWER SUPPLY METHOD
    57.
    发明申请
    WIRELESS POWER SUPPLY DEVICE AND WIRELESS POWER SUPPLY METHOD 审中-公开
    无线电源设备和无线供电方法

    公开(公告)号：US20130306124A1

    公开(公告)日：2013-11-21

    申请号：US13983113

    申请日：2012-01-24

    申请人： Masakazu Yajima ,  Osamu Enoki

    发明人： Masakazu Yajima ,  Osamu Enoki

    IPC分类号： H01L35/32

    CPC分类号： H01L35/32 ,  H01L35/16 ,  H01L35/34

    摘要： To provide a wireless power supply device and a wireless power supply method capable of supplying electric power by a wireless system, using a means other than radio waves. This wireless power supply device of the present invention is provided with (A) a thermoelectric generation device which performs thermoelectric generation in response to the change in atmospheric temperature, and (B) a temperature control device which periodically changes the atmospheric temperature of the thermoelectric generation device. Further, this wireless power supply method uses a wireless power supply device provided with a thermoelectric generation device and a temperature control device, wherein the atmospheric temperature of the thermoelectric generation device is periodically changed by the temperature control device, and the thermoelectric generation device performs thermoelectric generation in response to the change in the atmospheric temperature, and the obtained power is brought to the exterior.

    摘要翻译： 提供一种能够通过无线电系统提供电力的无线电源装置和无线电力供给方法，其使用除了无线电波之外的装置。 本发明的无线供电装置具备：（A）响应于大气温度的变化而进行热电生成的热电发电装置，（B）周期性地变化热电发电的大气温度的温度控制装置 设备。 此外，该无线供电方法使用具有热电生成装置和温度控制装置的无线供电装置，其中，所述热电发电装置的大气温度由所述温度控制装置周期性地变化，所述热电发电装置进行热电 响应于大气温度的变化，并且获得的功率被带到外部。

    High efficiency thermoelectric materials and devices
    59.
    发明授权
    High efficiency thermoelectric materials and devices 失效
    高效热电材料及器件

    公开(公告)号：US08569740B2

    公开(公告)日：2013-10-29

    申请号：US12686349

    申请日：2010-01-12

    申请人： Vladimir Kochergin

    发明人： Vladimir Kochergin

    IPC分类号： H01L29/66 ,  H01L21/20

    CPC分类号： H01L35/32 ,  B82Y10/00 ,  H01L29/15 ,  H01L35/16

    摘要： Growth of thermoelectric materials in the form of quantum well superlattices on three-dimensionally structured substrates provide the means to achieve high conversion efficiency of the thermoelectric module combined with inexpensiveness of fabrication and compatibility with large scale production. Thermoelectric devices utilizing thermoelectric materials in the form of quantum well semiconductor superlattices grown on three-dimensionally structured substrates provide improved thermoelectric characteristics that can be used for power generation, cooling and other applications.

    摘要翻译： 在三维结构的基板上以量子阱超晶格的形式生长的热电材料提供了实现热电模块的高转换效率以及制造成本低廉和大规模生产兼容性的手段。 利用在三维结构化衬底上生长的量子阱半导体超晶格形式的热电材料的热电器件提供可用于发电，冷却和其它应用的改进的热电特性。