公开(公告)号：US5959341A

公开(公告)日：1999-09-28

申请号：US901791

申请日：1997-07-28

申请人： Katsuhiro Tsuno ,  Tsuyoshi Tosho ,  Hideo Watanabe

发明人： Katsuhiro Tsuno ,  Tsuyoshi Tosho ,  Hideo Watanabe

IPC分类号： B22F7/00 ,  H01L35/08 ,  H01L35/16 ,  H01L35/34 ,  H02L31/058

CPC分类号： H01L35/08 ,  H01L35/16 ,  H01L35/34 ,  Y10S257/93

摘要： A thermoelectric semiconductor is formed of a sintered semiconductor layernd metal layers arranged on sides of opposite end faces of the sintered semiconductor layer. These metal layers are to inhibit a reaction between the sintered semiconductor layer and older layers through which electrodes are joined to the sintered semiconductor layer. The sintered semiconductor layer and the metal layers have been obtained beforehand by integrally sintering a semiconductor powder layer and metal sheets arranged on sides of opposite end faces of the semiconductor powder layer.

摘要翻译： 热电半导体由烧结半导体层和布置在烧结半导体层的相对端面侧的金属层形成。 这些金属层能够抑制烧结半导体层与电极与烧结半导体层接合的老层之间的反应。 通过一体烧结半导体粉末层和布置在半导体粉末层的相对端面侧的金属片，预先获得烧结半导体层和金属层。

公开(公告)号：US20110180121A1

公开(公告)日：2011-07-28

申请号：US13083666

申请日：2011-04-11

申请人： Toshinori Ota ,  Hiroki Yoshizawa ,  Kouiti Fujita ,  Isao Imai ,  Tsuyoshi Tosho ,  Ujihiro Nishiike

发明人： Toshinori Ota ,  Hiroki Yoshizawa ,  Kouiti Fujita ,  Isao Imai ,  Tsuyoshi Tosho ,  Ujihiro Nishiike

IPC分类号： H01L35/16

CPC分类号： H01L35/34 ,  B22D11/0611 ,  H01L35/16

摘要： A metal mixture is prepared, in which an excess amount of Te is added to a (Bi—Sb)2Te3 based composition. After melting the metal mixture, the molten metal is solidified on a surface of a cooling roll of which the circumferential velocity is no higher than 5 m/sec, so as to have a thickness of no less than 30 μm. Thus, a plate shaped raw thermoelectric semiconductor materials 10 are manufactured, in which Te rich phases are microscopically dispersed in complex compound semiconductor phases, and extending directions of C face of most of crystal grains are uniformly oriented. The raw thermoelectric semiconductor materials 10 are layered in the direction of the plate thickness. And the layered body is solidified and formed to form a compact 12. After that, the compact 12 is plastically deformed in such a manner that a shear force is applied in a uniaxial direction that is approximately parallel to the main layering direction of the raw thermoelectric semiconductor materials 10. As a result, a thermoelectric semiconductor 17 having crystal orientation in which extending direction of C face and the direction of c-axis of the hexagonal structure are approximately aligned. As a result, the crystalline orientation is improved, and the thermoelectric Figure-of-Merit is increased.

摘要翻译： 制备金属混合物，其中向（Bi-Sb）2Te3基组合物中加入过量的Te。 在熔融金属混合物之后，熔融金属在圆周速度不高于5m / sec的冷却辊的表面上固化，从而具有不小于30μm的厚度。 因此，制造了板状的原料热电半导体材料10，其中Te富相显微分散在复合化合物半导体相中，并且大部分晶粒的C面的延伸方向均匀取向。 原料热电半导体材料10在板厚方向上层叠。 并且层叠体被固化并形成以形成紧凑体12.之后，压块12塑性变形，使得剪切力沿大致平行于原料热电偶的主层叠方向的单轴方向施加 半导体材料10.结果，具有晶体取向的热电半导体17，其中C面的延伸方向和六边形结构的c轴的方向近似对准。 结果，晶体取向得到改善，并且热电式的品质提高。

公开(公告)号：US5224002A

公开(公告)日：1993-06-29

申请号：US809823

申请日：1991-12-17

申请人： Keishi Nakashima ,  Tsuyoshi Tosho

发明人： Keishi Nakashima ,  Tsuyoshi Tosho

IPC分类号： G11B5/31

CPC分类号： G11B5/3153

摘要： An object of the present invention is to provide a thin-film magnetic head device capable of magnetically writing magnetic signals into a magnetic recording medium having a high coercive force and reading the same therefrom. At least one of upper and lower magnetic layers is composed of a main magnetic layer and a sub magnetic layer. The sub magnetic layer has a saturation magnetic flux density of 1.5T or greater, a magnetic permeability of 1000 or less and an anisotropic magnetic field of 10 Oe or greater. The thickness of the sub magnetic layer should preferably be 0.5 .mu.m or less. According to the present invention, the sub magnetic layer can obtain a high saturation magnetic flux density and the main magnetic layer can attain a high magnetic permeability. With a thickness of 0.5 .mu.m or less, the sub magnetic layer can obtain a high saturation magnetic flux density without reducing the magnetic permeability.

摘要翻译： 本发明的目的是提供一种能够将磁信号磁性地写入具有高矫顽力的磁记录介质并从其读取的薄膜磁头装置。 上下磁层中的至少一个由主磁性层和副磁性层构成。 副磁性层的饱和磁通密度为1.5T以上，磁导率为1000以下，各向异性磁场为10Oe以上。 亚磁性层的厚度优选为0.5μm以下。 根据本发明，副磁性层可以获得高的饱和磁通密度，并且主磁性层可以获得高磁导率。 厚度为0.5μm以下时，副磁性层可以在不降低磁导率的情况下获得高的饱和磁通密度。

公开(公告)号：US08692103B2

公开(公告)日：2014-04-08

申请号：US13083666

申请日：2011-04-11

申请人： Toshinori Ota ,  Hiroki Yoshizawa ,  Kouiti Fujita ,  Isao Imai ,  Tsuyoshi Tosho ,  Ujihiro Nishiike

发明人： Toshinori Ota ,  Hiroki Yoshizawa ,  Kouiti Fujita ,  Isao Imai ,  Tsuyoshi Tosho ,  Ujihiro Nishiike

IPC分类号： H01L35/34

CPC分类号： H01L35/34 ,  B22D11/0611 ,  H01L35/16

摘要： A metal mixture is prepared, in which an excess amount of Te is added to a (Bi—Sb)2Te3 based composition. After melting the metal mixture, the molten metal is solidified on a surface of a cooling roll of which the circumferential velocity is no higher than 5 m/sec, so as to have a thickness of no less than 30 μm. Thus, a plate shaped raw thermoelectric semiconductor materials 10 are manufactured, in which Te rich phases are microscopically dispersed in complex compound semiconductor phases, and extending directions of C face of most of crystal grains are uniformly oriented. The raw thermoelectric semiconductor materials 10 are layered in the direction of the plate thickness. And the layered body is solidified and formed to form a compact 12. After that, the compact 12 is plastically deformed in such a manner that a shear force is applied in a uniaxial direction that is approximately parallel to the main layering direction of the raw thermoelectric semiconductor materials 10. As a result, a thermoelectric semiconductor 17 having crystal orientation in which extending direction of C face and the direction of c-axis of the hexagonal structure are approximately aligned. As a result, the crystalline orientation is improved, and the thermoelectric Figure-of-Merit is increased.

摘要翻译： 制备金属混合物，其中向（Bi-Sb）2Te3基组合物中加入过量的Te。 在熔融金属混合物之后，熔融金属在圆周速度不高于5m / sec的冷却辊的表面上固化，从而具有不小于30μm的厚度。 因此，制造了板状的原料热电半导体材料10，其中Te富相显微分散在复合化合物半导体相中，并且大部分晶粒的C面的延伸方向均匀取向。 原料热电半导体材料10在板厚方向上层叠。 并且层叠体被固化并形成以形成紧凑体12.此后，压块12塑性变形，使得剪切力沿大致平行于原料热电偶的主层叠方向的单轴方向施加 半导体材料10.结果，具有晶体取向的热电半导体17，其中C面的延伸方向和六边形结构的c轴的方向近似对准。 结果，晶体取向得到改善，并且热电式的品质提高。

公开(公告)号：US20060243314A1

公开(公告)日：2006-11-02

申请号：US10555855

申请日：2004-05-07

申请人： Toshinori Ota ,  Hiroki Yoshizawa ,  Kouiti Fujita ,  Isao Imai ,  Tsuyoshi Tosho ,  Ujihiro Nishiike

发明人： Toshinori Ota ,  Hiroki Yoshizawa ,  Kouiti Fujita ,  Isao Imai ,  Tsuyoshi Tosho ,  Ujihiro Nishiike

IPC分类号： H01L35/00

CPC分类号： H01L35/34 ,  B22D11/0611 ,  H01L35/16

摘要： A metal mixture is prepared, in which an excess amount of Te is added to a (Bi—Sb)2Te3 based composition. After melting the metal mixture, the molten metal is solidified on a surface of a cooling roll of which the circumferential velocity is no higher than 5 m/sec, so as to have a thickness of no less than 30 μm. Thus, a plate shaped raw thermoelectric semiconductor materials 10 are manufactured, in which Te rich phases are microscopically dispersed in complex compound semiconductor phases, and extending directions of C face of most of crystal grains are uniformly oriented. The raw thermoelectric semiconductor materials 10 are layered in the direction of the plate thickness. And the layered body is solidified and formed to form a compact 12. After that, the compact 12 is plastically deformed in such a manner that a shear force is applied in a uniaxial direction that is approximately parallel to the main layering direction of the raw thermoelectric semiconductor materials 10. As a result, a thermoelectric semiconductor 17 having crystal orientation in which extending direction of C face and the don of c-axis of the hexagonal structure are approximately aligned. As a result, the crystalline orientation is improved, and the thermoelectric Figure-of-Merit is increased.

摘要翻译： 制备金属混合物，其中将过量的Te加入到基于（Bi-Sb）2 N 3基团的组合物中。 在熔融金属混合物之后，熔融金属在圆周速度不高于5m / sec的冷却辊的表面上固化，从而具有不小于30μm的厚度。 因此，制造了板状的原料热电半导体材料10，其中Te富相显微分散在复合化合物半导体相中，并且大部分晶粒的C面的延伸方向均匀取向。 原料热电半导体材料10在板厚方向上层叠。 并且层状体被固化并形成以形成紧凑的12。 之后，紧凑体12以这样的方式发生塑性变形，使得剪切力沿大致平行于原料热电半导体材料10的主层叠方向的单轴方向施加。 结果，具有晶面取向的热电半导体17，其中C面的延伸方向和六边形结构的c轴的大致对准。 结果，晶体取向得到改善，并且热电式的品质提高。

公开(公告)号：US06172294B2

公开(公告)日：2001-01-09

申请号：US09289063

申请日：1999-04-12

申请人： Katsuhiro Tsuno ,  Tsuyoshi Tosho ,  Hideo Watanabe

发明人： Katsuhiro Tsuno ,  Tsuyoshi Tosho ,  Hideo Watanabe

IPC分类号： H01L3508

CPC分类号： H01L35/08 ,  H01L35/16 ,  H01L35/34 ,  Y10S257/93

摘要： A thermoelectric semiconductor is formed of a sintered semiconductor layer and metal layers arranged on sides of opposite end faces of the sintered semiconductor layer. These metal layers are to inhibit a reaction between the sintered semiconductor layer and solder layers through which electrodes are joined to the sintered semiconductor layer. The sintered semiconductor layer and the metal layers have been obtained beforehand by integrally sintering a semiconductor powder layer and metal sheets arranged on sides of opposite end faces of the semiconductor powder layer.

摘要翻译： 热电半导体由烧结半导体层和布置在烧结半导体层的相对端面侧的金属层形成。 这些金属层能够抑制烧结半导体层与电极与烧结半导体层接合的焊料层的反应。 通过一体烧结半导体粉末层和布置在半导体粉末层的相对端面侧的金属片，预先获得烧结半导体层和金属层。