Abstract:
A circuit for generating one or more serial bit streams includes a memory coupled to a reformatter, which is in turn coupled to a serializer for converting parallel data to serial data. The memory includes a plurality of words having a known bit width (e.g., 32 bits) for storing one or more serial bit streams. The length of each serial bit stream is generally not an integer multiple of the memory's bit width, causing the last word storing each serial bit stream to contain a gap. The reformatter eliminates each such gap by combining bits from the last word of a bit stream with bits from the first word to provide a completely filled word to the serializer. As operation proceeds, the reformatter continues to combine bits from successive words to ensure that completely filled words are produced. Gaps that formerly appeared when producing serial bit streams are thereby eliminated.
Abstract:
A memory circuit (14) having features specifically adapted to permit the memory circuit (14) to serve as a video frame memory is disclosed. The memory circuit (14) contains a dynamic random access memory array (24) with buffers (18, 20) on input and output data ports (22) thereof to permit asynchronous read, write and refresh accesses to the memory array (24). The memory circuit (14) is accessed both serially and randomly. An address generator (28) contains an address buffer register (36) which stores a random access address and an address sequencer (40) which provides a stream of addresses to the memory array (24). An initial address for the stream of addresses is the random access address stored in the address buffer register (36).
Abstract:
A memory circuit (14) having features specifically adapted to permit the memory circuit (14) to serve as a video frame memory is disclosed. The memory circuit (14) contains a dynamic random access memory array (24) with buffers (18, 20) on input and output data ports (22) thereof to permit asynchronous read, write and refresh accesses to the memory array (24). The memory circuit (14) is accessed both serially and randomly. An address generator (28) contains an address buffer register (36) which stores a random access address and an address sequencer (40) which provides a stream of addresses to the memory array (24). An initial address for the stream of addresses is the random access address stored in the address buffer register (36).
Abstract:
A memory circuit (14) having features specifically adapted to permit the memory circuit (14) to serve as a video frame memory is disclosed. The memory circuit (14) contains a dynamic random access memory array (24) with buffers (18, 20) on input and output data ports (22) thereof to permit asynchronous read, write and refresh accesses to the memory array (24). The memory circuit (14) is accessed both serially and randomly. An address generator (28) contains an address buffer register (36) which stores a random access address and an address sequencer (40) which provides a stream of addresses to the memory array (24). An initial address for the stream of addresses is the random access address stored in the address buffer register (36).
Abstract:
A memory circuit (14) having features specifically adapted to permit the memory circuit (14) to serve as a video frame memory is disclosed. The memory circuit (14) contains a dynamic random access memory array (24) with buffers (18, 20) on input and output data ports (22) thereof to permit asynchronous read, write and refresh accesses to the memory array (24). The memory circuit (14) is accessed both serially and randomly. An address generator (28) contains an address buffer register (36) which stores a random access address and an address sequencer (40) which provides a stream of addresses to the memory array (24). An initial address for the stream of addresses is the random access address stored in the address buffer register (36).
Abstract:
A method for accessing data in a serial ferroelectric memory device including an input shift register coupled to a ferroelectric memory array including a plurality of memory cells arranged in a number of rows and columns thereof, the memory array having associated row, column, and segment decoders, includes clocking a serial address into the input shift register and starting a read access before the serial address is completely shifted into the input shift register. A read access can be started before an input bit sequence containing row, column, and segment decoder addresses has been completely clocked into the memory.
Abstract:
A semiconductor memory device capable of shortening the command supply interval during random access and thus improving the transfer rate of input/output data. In response to a write command, identical data is written into multiple memory banks having identical addresses assigned thereto. At this time, a bank selection circuit sequentially selects the memory banks to initiate write operations in a staggered manner. Since the write operation can be started before all memory banks become idle, the interval between the supply of read command and the supply of write command can be shortened. Consequently, the number of commands supplied per given time can be increased, and since data signal can be input/output more frequently than in conventional devices, the data transfer rate (data bus occupancy) improves. As a result, the performance of a system to which the semiconductor memory device is mounted can be enhanced.
Abstract:
M parallel datastreams are interleaved into a serial bitstream and shifted into a staging register, so that bit zeros of all datastreams shift in first and bit (X-1)s last. All bits of the Mth datastream occupy uniformly spaced non-adjacent memory elements interconnected with a target memory device having M memory registers each of width X. The Mth memory register of the memory device is addressed, simultaneously writing all interconnected bits to the Mth memory register within a single clock period. The bitstream is then shifted by one memory element, such that bits of the (M-1)th parallel datastream occupy the interconnected memory elements, the register address decrements, and the interconnected bits are simultaneously written to the (M-1)th register. This process iterates until M registers are written within an elapsed time of M clock periods. Reading occurs essentially in a reverse sequence.
Abstract:
A semiconductor memory device comprises a memory cell group comprising a plurality of memory cells arranged in matrix; a specification circuit for specifying sequentially memory cells addressed by consecutive addresses in the memory cells, and for enterring them in an active state; a data input/output (I/O) circuit for performing a data read-out/write-in operation (data I/O operation) for the consecutive memory cells specified by the specification circuit under a control based on a read-out/write-in signal provided from an external section; a counter circuit for counting the number of cycles of a basic clock signal provided from an external section; and a controller for receiving at least one or more specification signals provided from an external section, for outputting a control signal per specification signal for specifying a particular cycle as a starting cycle to count the number of the cycles of the basic clock signal, and for instructing the counter circuit to count the number of counts of the basic clock signal based on the control signal, and for controlling a specification operation executed by the specification circuit and the data I/O operation of the data I/O circuit, so that the memory access operations for the memory cell group are controlled.
Abstract:
A communications unit configured to be implemented in an ASIC environment utilizes only a small amount of chip surface area and requires a minimum number of pins. The unit operates asynchronously with respect to the ASIC internal clock so that communications can occur independent of such internal clock. In one embodiment the communications unit includes a controller coupled to a shift register via a data bus. Pin connections to the controller include a request line REQ, an input/output control line I/O (or INOUT), an acknowledgement line ACK, an external clock line EXTCLK, and a data line DATA. The shift register also is coupled, via a data bus, to a memory module, e.g., a RAM. An ASIC processor is coupled to the controller, shift register and memory module via control lines.