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公开(公告)号:US12040812B2
公开(公告)日:2024-07-16
申请号:US17636820
申请日:2020-08-19
Applicant: Teledyne e2v Semiconductors SAS
Inventor: Quentin Béraud-Sudreau , Jérôme Ligozat , Rémi Laube , Marc Stackler
IPC: H03M7/00 , G11C7/10 , H03K19/17736 , H03M1/12
CPC classification number: H03M1/1255 , G11C7/1036 , H03K19/1774 , H03M1/1215
Abstract: A method for synchronizing analog data (Data_ana1, Data_ana2) at the output of a plurality of digital/analog converters (DAC), comprising at least one conversion core (C1, C2), on an active edge of a common reference clock (Clk), the method comprising the following steps: a) supplying an external synchronization signal (SYNC_ext), to at least one converter, and supplying a signal of the common reference clock to the plurality of converters; b) generating, within each converter, an internal synchronization signal (SYNC_int), such that all the internal synchronization signals are aligned on an active edge of the common reference clock; c) for each of the converters, generating a start signal (START1, START2) which represents the start of the sending of digital data and counting a number of clock strokes until the internal synchronization signal is generated, and; d) applying a delay Ri (R1, R2) to each converter core, the delay being equal to the difference between the highest number counted in step c) and the number counted for the core. Device for implementing such a method.
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公开(公告)号:US20240233852A1
公开(公告)日:2024-07-11
申请号:US18406424
申请日:2024-01-08
Applicant: Samsung Electronics Co., Ltd.
Inventor: Makoto Hirano , Jongmin Kim
CPC classification number: G11C29/32 , G11C7/1036 , G11C29/1201 , G11C29/20
Abstract: A nonvolatile memory device includes a control logic configured to generate a clock signal and a page buffer selection signal including information about a ratio of a number of page buffers on which a fail bit counting operation is performed to a total number of the plurality of page buffers, a fail bit counting circuit configured to select one or more page buffers from among the plurality of page buffers, repeat the fail bit counting operation on the selected one or more page buffers, and output a value of a number of fail bits with respect to the page buffers on which the fail bit counting operation is performed, and a predictor configured to generate a prediction value with respect to a total number of fail bits with respect to the plurality of page buffers.
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公开(公告)号:US11922064B2
公开(公告)日:2024-03-05
申请号:US17483119
申请日:2021-09-23
Applicant: SK hynix Inc.
Inventor: Soo Jin Kim , Seung Jin Park
CPC classification number: G06F3/0659 , G06F3/0604 , G06F3/0673 , G11C7/1036 , G11C16/0483 , G11C16/10 , G11C16/26
Abstract: A storage device can control the input/output of data at a high frequency. The storage device includes a memory device and a memory controller for controlling the memory device, and providing the memory device with a command. The memory device includes a memory unit, and an interface chip for performing a training operation in response to the command. The interface chip generates a shift signal according to a first data strobe signal provided from the memory controller, and stores, based on the shift signal, training data provided from the memory controller.
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公开(公告)号:US11657892B1
公开(公告)日:2023-05-23
申请号:US17561115
申请日:2021-12-23
Applicant: Advanced Micro Devices, Inc.
Inventor: Joel Thornton Irby , Grady L. Giles
CPC classification number: G11C29/4401 , G11C7/106 , G11C7/1012 , G11C7/1036 , G11C7/1087 , G11C29/1201 , G11C29/46 , G11C2029/1202
Abstract: An integrated circuit includes a latch array including a plurality of latches logically configured in rows and columns, a plurality of repair latches operatively coupled to the plurality of latches and latch array built in self-test and repair logic (LABISTRL) coupled to the plurality of latches. In some implementations the LABISTRL configures latches in the array as one or more column serial test shift register, detects one or more defective latches of the plurality of latches based on applied test data, and selects at least one repair latch in response to detection of at least one defective latch.
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公开(公告)号:US20190026171A1
公开(公告)日:2019-01-24
申请号:US16140882
申请日:2018-09-25
Applicant: Micron Technology, Inc.
Inventor: Perry V. Lea , Shawn Rosti
CPC classification number: G06F11/073 , G06F11/0778 , G06F11/079 , G06F11/364 , G11C7/065 , G11C7/1006 , G11C7/1036 , G11C11/4076 , G11C11/408 , G11C11/4091 , G11C11/4093 , G11C11/4096 , G11C29/00 , G11C2207/2245
Abstract: The present disclosure includes apparatus and methods for debugging on a memory device. An example apparatus comprises a memory device having an array of memory cells and sensing circuitry coupled to the array. The sensing circuitry includes a sense amplifier and a compute component configured to perform logical operations on the memory device. A controller is coupled to the array and sensing circuitry and configured to cause the memory device to store debugging code in the array of memory cells and execute instructions to perform logical operations using the sensing circuity. The controller is further configured to receive an indication in the executing instructions to halt a logical operation, and to execute the debugging code on the memory device.
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公开(公告)号:US09990967B2
公开(公告)日:2018-06-05
申请号:US15591899
申请日:2017-05-10
Applicant: Micron Technology, Inc.
Inventor: Jason T. Zawodny , Sanjay Tiwari
CPC classification number: G11C7/1012 , G06F3/0619 , G06F3/065 , G06F3/0685 , G06F13/1663 , G11C7/065 , G11C7/10 , G11C7/1006 , G11C7/1036 , G11C7/22 , G11C16/10 , G11C16/24 , G11C16/26 , G11C2207/005 , G11C2211/5641
Abstract: The present disclosure includes apparatuses and methods related to performing corner turn operations using sensing circuitry. An example apparatus comprises a first group of memory cells coupled to an access line and a plurality of sense lines and a second group of memory cells coupled to a plurality of access lines and a sense line. The example apparatus comprises a controller configured to cause a corner turn operation using sensing circuitry on an element stored in the first group of memory cells resulting in the element being stored in the second group of memory cells.
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公开(公告)号:US20180122433A1
公开(公告)日:2018-05-03
申请号:US15855626
申请日:2017-12-27
Applicant: lntel Corporation
Inventor: Glenn Hinton , Bret Toll , Ronak Singhal
CPC classification number: G11C7/1036 , G06F9/30043 , G06F9/30109 , G06F9/30163
Abstract: A processor includes N-bit registers and a decode unit to receive a multiple register memory access instruction. The multiple register memory access instruction is to indicate a memory location and a register. The processor includes a memory access unit coupled with the decode unit and with the N-bit registers. The memory access unit is to perform a multiple register memory access operation in response to the multiple register memory access instruction. The operation is to involve N-bit data, in each of the N-bit registers comprising the indicated register. The operation is also to involve different corresponding N-bit portions of an M×N-bit line of memory corresponding to the indicated memory location. A total number of bits of the N-bit data in the N-bit registers to be involved in the multiple register memory access operation is to amount to at least half of the M×N-bits of the line of memory.
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公开(公告)号:US20180122432A1
公开(公告)日:2018-05-03
申请号:US15855618
申请日:2017-12-27
Applicant: lntel Corporation
Inventor: Glenn Hinton , Bret Toll , Ronak Singhal
CPC classification number: G11C7/1036 , G06F9/30043 , G06F9/30109 , G06F9/30163
Abstract: A processor includes N-bit registers and a decode unit to receive a multiple register memory access instruction. The multiple register memory access instruction is to indicate a memory location and a register. The processor includes a memory access unit coupled with the decode unit and with the N-bit registers. The memory access unit is to perform a multiple register memory access operation in response to the multiple register memory access instruction. The operation is to involve N-bit data, in each of the N-bit registers comprising the indicated register. The operation is also to involve different corresponding N-bit portions of an M×N-bit line of memory corresponding to the indicated memory location. A total number of bits of the N-bit data in the N-bit registers to be involved in the multiple register memory access operation is to amount to at least half of the M×N-bits of the line of memory.
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公开(公告)号:US09928887B2
公开(公告)日:2018-03-27
申请号:US15457339
申请日:2017-03-13
Applicant: Micron Technology, Inc.
Inventor: Sanjay Tiwari
IPC: G11C7/10 , G11C7/06 , G11C11/4091 , G11C11/4096
CPC classification number: G11C7/1036 , G11C7/065 , G11C7/1006 , G11C7/1012 , G11C11/4091 , G11C11/4096
Abstract: Examples of the present disclosure provide apparatuses and methods for performing shift operations in a memory. An example method comprises performing a shift operation a first element stored in a first group of memory cells coupled to a first access line and a number of sense lines of a memory array and a second element stored in a second group of memory cells coupled to a second access line and the number of sense lines of the memory array. The method can include shifting the first element by a number of bit positions defined by the second element by performing a number of AND operations, OR operations, SHIFT operations, and INVERT operations performed without transferring data via an input/output (I/O) line.
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公开(公告)号:US20180033479A1
公开(公告)日:2018-02-01
申请号:US15222514
申请日:2016-07-28
Applicant: Micron Technology, Inc.
Inventor: Perry V. Lea , Glen E. Hush
IPC: G11C11/406 , G06F3/06 , G11C11/4091 , G11C11/408 , G11C11/4093
CPC classification number: G11C11/40615 , G06F3/061 , G06F3/0616 , G06F3/0629 , G06F3/0673 , G11C5/025 , G11C7/1006 , G11C7/1036 , G11C8/12 , G11C11/4082 , G11C11/4087 , G11C11/4091 , G11C11/4093 , G11C11/4094 , G11C11/4096 , G11C2211/4013
Abstract: The present disclosure includes apparatuses and methods for performing operations by a memory device in a self-refresh state. An example includes an array of memory cells and a controller coupled to the array of memory cells. The controller is configured to direct performance of compute operations on data stored in the array when the array is in a self-refresh state.