公开(公告)号：US20230361227A1

公开(公告)日：2023-11-09

申请号：US17430951

申请日：2021-05-21

申请人： Trina Solar Co., Ltd.

发明人： Xueling Zhang ,  Wei Liu ,  Hong Chen ,  Lei Jian ,  Yifeng Chen

IPC分类号： H01L31/0216 ,  H01L31/18

CPC分类号： H01L31/02167 ,  H01L31/18

摘要： A laminated passivation structure of solar cell and a preparation method thereof are disclosed herein. The laminated passivation structure of solar cell includes a P-type silicon substrate, a first dielectric layer, a second dielectric layer, a third dielectric layer and a fourth dielectric layer sequentially arranged on the back surface of the P-type silicon substrate from inside to outside. The preparation method includes generating a first dielectric layer on the back surface of the P-type silicon substrate, and then sequentially depositing a second dielectric layer, a third dielectric layer and a fourth dielectric layer on the first dielectric layer.

公开(公告)号：US10347776B2

公开(公告)日：2019-07-09

申请号：US15024762

申请日：2014-07-31

申请人： Changzhou Trina Solar Energy Co., Ltd.

发明人： Yifeng Chen ,  Pierre J. Verlinden ,  Zhiqiang Feng ,  Hui Shen ,  Pietro P. Altermatt

IPC分类号： H01L31/00 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/0216 ,  H01L31/028

摘要： Disclosed are a back-surface bridge type contact electrode of a crystalline silicon solar battery and a preparation method therefor. The back-surface bridge type contact electrode of a crystalline silicon solar battery includes a local electrode connected to a local back surface field and a back surface electrode which is covered with a back surface passivation film on a contact surface with a silicon wafer substrate, at least one bridge electrode is provided between the local electrode and the back surface electrode, the contact surface of the bridge electrode and the silicon wafer substrate is also covered with the back surface passivation film, the local electrode is connected to the back surface electrode via the bridge electrode, and the back surface passivation film is also provided, besides at the connection region of the bridge electrode, between the local electrode and the back surface electrode.

公开(公告)号：US09965846B2

公开(公告)日：2018-05-08

申请号：US15303386

申请日：2014-05-13

申请人： Trina Solar Co., Ltd

发明人： Shaoyong Fu ,  Zhen Xiong

IPC分类号： G06T7/00 ,  G01N21/55 ,  G01N21/84 ,  G06K9/46 ,  H04N5/225 ,  H01L21/66 ,  H01L29/04

CPC分类号： G06T7/0004 ,  G01N21/4738 ,  G01N21/55 ,  G01N21/84 ,  G01N21/9501 ,  G01N2021/8477 ,  G06K9/4661 ,  G06T7/10 ,  G06T2207/10152 ,  G06T2207/30148 ,  H01L22/12 ,  H01L29/045 ,  H04N5/2256 ,  H04N5/2258

摘要： A method and apparatus for detecting crystal orientation of a silicon wafer is proposed. The detection method uses a camera shooting device to irradiate the silicon wafer in a rotation manner in different angular directions and obtains the corresponding reflection intensities, based on which a reflection curve is drawn for a grain of interest in a polar coordinate system; normal directions of three or more faces of a regular octahedron of a grain are determined by identifying a pixel brightness extreme value in the reflection curve, and then all normal vectors of the regular octahedron are calculated, so that a crystal orientation of the grain of interest may be calculated. The camera shooting device has a light source and one or more camera shooting probes.