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    HEAT DISSIPATION STRUCTURES
    52.
    发明申请
    HEAT DISSIPATION STRUCTURES 有权

    公开(公告)号：US20210082784A1

    公开(公告)日：2021-03-18

    申请号：US17107312

    申请日：2020-11-30

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Yun-Wei CHENG ,  Chun-Hao CHOU ,  Kuo-Cheng LEE ,  Ying-Hao CHEN

    IPC: H01L23/367 ,  H01L23/48 ,  H01L25/065

    Abstract: The present disclosure describes heat dissipation structures formed in functional or non-functional areas of a three-dimensional chip structure. These heat dissipation structures are configured to route the heat generated within the three-dimensional chip structure to designated areas on or outside the three-dimensional chip structure. For example, the three-dimensional chip structure can include a plurality of chips vertically stacked on a substrate, a first passivation layer interposed between a first chip and a second chip of the plurality of chips, and a heat dissipation layer embedded in the first passivation layer and configured to allow conductive structures to pass through.

    IMAGE SENSOR AND METHOD OF FORMING THE SAME
    53.
    发明申请
    IMAGE SENSOR AND METHOD OF FORMING THE SAME 有权

    公开(公告)号：US20210020671A1

    公开(公告)日：2021-01-21

    申请号：US16512834

    申请日：2019-07-16

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Yun-Wei CHENG ,  Chun-Hao CHOU ,  Kuo-Cheng LEE ,  Ying-Hao CHEN

    IPC: H01L27/146

    Abstract: A back side illumination (BSI) image sensor is provided. The BSI image sensor includes a semiconductor substrate, a first dielectric layer, a reflective element, a second dielectric layer and a color filter layer. The semiconductor substrate has a front side and a back side. The first dielectric layer is disposed on the front side of the semiconductor substrate. The reflective element is disposed on the first dielectric layer, in which the reflective element has an inner sidewall contacting the first dielectric layer, and the inner sidewall has a zigzag profile. The second dielectric layer is disposed on the first dielectric layer and the reflective element. The color filter layer is disposed on the backside of the semiconductor substrate.

    Light Blocking Layer for Image Sensor Device
    54.
    发明申请
    Light Blocking Layer for Image Sensor Device 审中-公开

    公开(公告)号：US20200052022A1

    公开(公告)日：2020-02-13

    申请号：US16657469

    申请日：2019-10-18

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Yun-Wei CHENG ,  Chun-Hao CHOU ,  Kuo-Cheng LEE

    IPC: H01L27/146

    Abstract: The present disclosure is directed to a method for forming a light blocking material layer on a back side illuminated image sensor device. The light blocking material layer can block or absorb light rays incoming to the back side illuminated image sensor device at grazing incident angles. The light blocking material layer can be formed using a self-aligned process that does not require the use of a photolithography mask or photolithography operations. For example, the light blocking material layer can be formed over an image sensor device and subsequently etched so that the light blocking material layer remains in areas where light rays incoming at grazing incident angles enter the back side illuminated image sensor device.

    IMAGE SENSOR DEVICE
    55.
    发明申请
    IMAGE SENSOR DEVICE 审中-公开

    公开(公告)号：US20200035732A1

    公开(公告)日：2020-01-30

    申请号：US16595729

    申请日：2019-10-08

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Yun-Wei CHENG ,  Chun-Hao CHOU ,  Kuo-Cheng LEE ,  Hsun-Ying HUANG

    IPC: H01L27/146

    Abstract: An image sensor device is provided. The image sensor device includes a substrate having a front surface, a back surface, and a light-sensing region. The image sensor device includes a first isolation structure extending from the front surface into the substrate. The first isolation structure includes a first insulating layer and an etch stop layer, the first insulating layer extends from the front surface into the substrate, the etch stop layer is between the first insulating layer and the substrate, and the etch stop layer, the first insulating layer, and the substrate are made of different materials. The image sensor device includes a second isolation structure extending from the back surface into the substrate. The second isolation structure is in direct contact with the etch stop layer, the second isolation structure surrounds the light-sensing region, and the second isolation structure includes a light-blocking structure.

    HIGH ABSORPTION STRUCTURE FOR SEMICONDUCTOR DEVICE
    56.
    发明申请
    HIGH ABSORPTION STRUCTURE FOR SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20190148422A1

    公开(公告)日：2019-05-16

    申请号：US15879824

    申请日：2018-01-25

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Yun-Wei CHENG ,  Chun-Hao CHOU ,  Kuo-Cheng LEE

    IPC: H01L27/146 ,  H01L31/036

    Abstract: A semiconductor device is operated for sensing incident light and includes a carrier, a device layer, and a semiconductor layer. The device layer is disposed on the carrier. The semiconductor layer is disposed on the device layer. The semiconductor layer includes light-sensing regions. The semiconductor layer has a first surface and a second surface opposite to the first surface that is adjacent to the device layer. The second surface has a lattice plane which is tilted with respect to a basal plane, and the semiconductor layer has various pit portions arranged on the second surface.

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