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公开(公告)号：US20210225641A1
公开(公告)日：2021-07-22
申请号：US17187930
申请日：2021-03-01
Inventor： Tae Gon KIM , Nuri OH , Tianshuo ZHAO , Cherie KAGAN , Eun Joo JANG , Christopher MURRAY
IPC: H01L21/02 , H01L29/12 , H01L29/66 , H01L29/775
Abstract: A production method of a quantum dot comprising a Group IIIA-VA compound, the quantum dot as prepared, and an electronic device including the same, and the production method includes: supplying a Group VA element precursor including a halide of a Group VA element and a first ligand of a phosphine compound or a first amine compound; and performing a reaction between the Group VA element precursor and a Group IIIA metal precursor in the presence of a reducing agent in an organic reaction medium including a second amine compound.
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公开(公告)号：US20210126212A1
公开(公告)日：2021-04-29
申请号：US17080069
申请日：2020-10-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Nayoun WON , Mi Hye LIM , Tae Gon KIM , Taekhoon KIM , Shang Hyeun PARK , Shin Ae JUN
Abstract: A cadmium-free, core shell quantum dot, a quantum dot polymer composite, and electronic devices including the quantum dot polymer composite. The core shell quantum dot has an extinction coefficient per gram of greater than or equal to 0.3, an ultraviolet-visible absorption spectrum curve that has a positive differential coefficient value at 450 nm, wherein the core shell quantum dot includes a semiconductor nanocrystal core including indium and phosphorus, and optionally zinc, and a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the shell including zinc, selenium, and sulfur, wherein the core shell quantum dot has a quantum efficiency of greater than or equal to about 80%, and is configured to emit green light upon excitation.
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公开(公告)号：US20200251623A1
公开(公告)日：2020-08-06
申请号：US16777223
申请日：2020-01-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Deukseok CHUNG , Tae Gon KIM
IPC: H01L33/50 , H01L25/075 , H01L33/38 , H01L33/00
Abstract: A method of manufacturing a display device includes preparing a plurality of light-emitting element packages on a substrate, preparing a first solution including first semiconductor nanocrystals, applying a voltage to a part of the plurality of light-emitting element packages to transport the first semiconductor nanocrystals to a region overlapped with the part of the plurality of light-emitting element packages, and forming a first color conversion layer with the first semiconductor nanocrystals.
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公开(公告)号：US20200174288A1
公开(公告)日：2020-06-04
申请号：US16697650
申请日：2019-11-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Tae Gon KIM , Garam PARK , Jooyeon AHN , Shang Hyeun PARK , Shin Ae JUN
Abstract: A quantum dot including a core and a shell disposed on the core wherein one of the core and the shell includes a first semiconductor nanocrystal including zinc and sulfur and the other of the core and the shell includes a second semiconductor nanocrystal having a different composition from the first semiconductor nanocrystal, the first semiconductor nanocrystal further includes a metal and a halogen configured to act as a Lewis acid in a halide form, an amount of the metal is greater than or equal to about 10 mole percent (mol %) based on a total number of moles of sulfur, and an amount of the halogen is greater than or equal to about 10 mol % based on a total number of moles of sulfur, a method of producing the same, and a composite and an electronic device including the same.
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Patent Agency Ranking
公开(公告)号：US20200017765A1
公开(公告)日：2020-01-16
申请号：US16507461
申请日：2019-07-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Taekhoon KIM , Seonmyeong CHOI , Jongmin LEE , Tae Gon KIM , Young Seok PARK , Shin Ae JUN
Abstract: A photosensitive composition including a quantum dot; a binder polymer including a carboxylic acid group; a photopolymerizable monomer including a carbon-carbon double bond; and a photoinitiator, a patterned film produced therefrom and a display device including the same. The quantum dot includes a seed including a first semiconductor nanocrystal, a quantum well including a second semiconductor nanocrystal, the quantum well surrounding the seed and a shell disposed on the quantum well, the shell including a third semiconductor nanocrystal and not including cadmium, the second semiconductor nanocrystal has a different composition from each of the first semiconductor nanocrystal and the third semiconductor nanocrystal, and an energy bandgap of the second semiconductor nanocrystal is smaller than an energy bandgap of the first semiconductor nanocrystal and an energy bandgap of the third semiconductor nanocrystal.
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公开(公告)号：US20190393435A1
公开(公告)日：2019-12-26
申请号：US16441660
申请日：2019-06-14
Inventor： Tae Gon KIM , Tianshuo ZHAO , Nuri OH , Cherie KAGAN , Eun Joo JANG , Christopher MURRAY
IPC: H01L51/42
Abstract: An electronic device and a production method thereof, wherein the electronic device includes: a semiconductor layer comprising a plurality of quantum dots; and a first electrode and a second electrode spaced apart from each other; wherein the plurality of quantum dots do not comprise cadmium, lead, or mercury; wherein the plurality of quantum dots comprise indium and optionally gallium; a Group VA element, wherein the Group VA element comprises antimony, arsenic, or a combination thereof, and a molar ratio of the Group VA element with respect to the Group IIIA metal (e.g., indium) is less than or equal to about 1.2:1, and wherein the semiconductor layer may be disposed between the first electrode and the second electrode.
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公开(公告)号：US20190385839A1
公开(公告)日：2019-12-19
申请号：US16441574
申请日：2019-06-14
Inventor： Tae Gon KIM , Nuri OH , Tianshuo ZHAO , Cherie KAGAN , Eun Joo JANG , Christopher MURRAY
IPC: H01L21/02 , H01L29/12 , H01L29/66 , H01L29/775
Abstract: A production method of a quantum dot comprising a Group IIIA-VA compound, the quantum dot as prepared, and an electronic device including the same, and the production method includes: supplying a Group VA element precursor including a halide of a Group VA element and a first ligand of a phosphine compound or a first amine compound; and performing a reaction between the Group VA element precursor and a Group IIIA metal precursor in the presence of a reducing agent in an organic reaction medium including a second amine compound.
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58.发明申请公开(公告)号：US20190112523A1
公开(公告)日：2019-04-18
申请号：US16158483
申请日：2018-10-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yongwook KIM , Eun Joo JANG , Tae Gon KIM , Shang Hyeun PARK , Hyo Sook JANG , Young-soo JEONG
Abstract: A composition comprising: a plurality of quantum dots; a plurality of luminous carbon nanoparticles; a carboxylic acid group-containing binder; a polymerizable monomer including a carbon-carbon double bond; and an initiator, wherein the plurality of quantum dots comprises a Group II-VI compound, a Group III-V compound, a Group IV-VI compound, or a combination thereof, the plurality of luminous carbon nanoparticles have a size of less than or equal to about 10 nanometers, and exhibit both a D band and a G band in a Raman spectrum thereof, and at least a portion of the plurality of luminous carbon nanoparticles absorb light having a wavelength of greater than or equal to about 400 nanometers and a maximum luminous peak wavelength thereof is greater than or equal to about 480 nanometers.
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公开(公告)号：US20160049536A1
公开(公告)日：2016-02-18
申请号：US14666057
申请日：2015-03-23
Applicant: Samsung Electronics Co., Ltd.
Inventor： Tae Gon KIM , Jinyoung HWANG , Eun Joo JANG
IPC: H01L31/0352 , H01L31/109 , H01L27/146
CPC classification number: H01L31/035218 , H01L27/14665 , H01L31/0352 , H01L31/09 , H01L31/109
Abstract: A photoconductor includes a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer, a first electrode connected to a first lateral side of the first semiconductor layer and the second semiconductor layer, and a second electrode connected to a second lateral side of the first semiconductor layer and the second semiconductor layer, where the first semiconductor layer and the second semiconductor layer form a type II junction or a quasi-type-II junction.
Abstract translation: 光电导体包括第一半导体层，设置在第一半导体层上的第二半导体层，连接到第一半导体层和第二半导体层的第一横向侧的第一电极和连接到第一半导体层的第二侧面的第二电极 第一半导体层和第二半导体层，其中第一半导体层和第二半导体层形成II型结或准II型结。
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