-
公开(公告)号:US12148739B2
公开(公告)日:2024-11-19
申请号:US18234798
申请日:2023-08-16
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Seogwoo Hong , Junsik Hwang , Kyungwook Hwang
IPC: H01L25/075 , H01L27/12 , H01L33/50 , H01L33/62
Abstract: The present disclosure provides a micro-light-emitting diode display apparatus and a method of manufacturing the same. Provided is a micro-light-emitting diode (LED) display apparatus including a plurality of pixels, the micro-LED display apparatus including a driving circuit substrate, a first electrode provided on the driving circuit substrate, one or more microlight-emitting diodes (LEDs) provided on the first electrode, an insulating layer provided on the one or more micro-LEDs, a via pattern provided in the insulating layer, electrical contacts provided in the via pattern, and a second electrode provided on the electrical contacts, wherein the via pattern exposes a portion of the one or more micro-LEDs.
-
公开(公告)号:US11876149B2
公开(公告)日:2024-01-16
申请号:US17582854
申请日:2022-01-24
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Kyungwook Hwang , Sungjin Kang , Junsik Hwang , Junhee Choi
IPC: H01L33/00 , H01L25/075 , H01L33/50 , H01L33/62
CPC classification number: H01L33/0095 , H01L25/0753 , H01L33/507 , H01L33/62
Abstract: Provided is a display device including a substrate, a transfer guiding mold provided on the substrate and including a plurality of openings, and a plurality of micro light emitting diodes (LEDs) provided on the substrate in the plurality of openings, wherein a height of the transfer guiding mold is less than twice a height of each of the plurality of micro LEDs.
-
公开(公告)号:US11848399B2
公开(公告)日:2023-12-19
申请号:US17569217
申请日:2022-01-05
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Kiho Kong , Junhee Choi , Deukseok Chung , Junsik Hwang
CPC classification number: H01L33/0095 , G09G3/32 , H01L33/504 , H01L33/62 , G09G2310/0267 , G09G2310/0275 , H01L2933/0041 , H01L2933/0066
Abstract: Provided are a method of manufacturing a display apparatus and the display apparatus. The method includes forming an emissive layer and a driving layer on a first area of a substrate, forming an exposure line electrically connected to the driving layer, on a second area of the substrate, and forming a color conversion layer on the driving layer by emitting light from the emissive layer using the exposure line.
-
公开(公告)号:US20230402439A1
公开(公告)日:2023-12-14
申请号:US17985332
申请日:2022-11-11
Applicant: SAMSUNG ELECTRONICS CO., LTD. , CHUNGBUK NATIONAL UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION
Inventor: Kyungwook Hwang , Jaewook Jeong , Junsik Hwang , Dongkyun Kim , Dongho Kim , Hyunjoon Kim , Joonyong Park , Seogwoo Hong , Sanghoon Song , Minchul Yu
CPC classification number: H01L25/167 , H01L33/38 , H01L24/05 , H01L24/95 , H01L2224/05559 , H01L24/16 , H01L2224/16145 , H01L2224/95001
Abstract: Provided is a microchip including a chip body having a first surface and a second surface facing the first surface, and an electrode layer on the second surface, wherein a surface roughness of the first surface is smaller than a surface roughness of an upper surface of the electrode layer such that van der Waals force between the first surface and an external contact surface are greater than van der Waals force between the electrode layer and the external contact surface.
-
公开(公告)号:US20230274969A1
公开(公告)日:2023-08-31
申请号:US18312641
申请日:2023-05-05
Applicant: Samsung Electronics Co., Ltd.
Inventor: Kyungwook Hwang , Junsik Hwang
IPC: H01L21/683 , H01L25/075 , H01L33/50 , H01L33/52 , H01L33/62
CPC classification number: H01L21/6835 , H01L25/0753 , H01L33/50 , H01L33/52 , H01L33/62 , H01L2221/68309 , H01L2221/68313 , H01L2221/68354 , H01L2221/68368 , H01L2933/0041 , H01L2933/005 , H01L2933/0066
Abstract: A wet alignment method for a micro-semiconductor chip and a display transfer structure are provided. The wet alignment method for a micro-semiconductor chip includes: supplying a liquid to a transfer substrate including a plurality of grooves; supplying the micro-semiconductor chip onto the transfer substrate; scanning the transfer substrate by using an absorber capable of absorbing the liquid. According to the wet alignment method, the micro-semiconductor chip may be transferred onto a large area.
-
公开(公告)号:US11682748B2
公开(公告)日:2023-06-20
申请号:US16831194
申请日:2020-03-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Junsik Hwang , Sungjin Kang , Kyungwook Hwang , Junhee Choi
IPC: H01L33/20 , H01L25/075 , H01L33/62 , H01L33/38
CPC classification number: H01L33/20 , H01L25/0753 , H01L33/382 , H01L33/62
Abstract: A light-emitting diode (LED) includes a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially stacked, and includes a first electrode pad, a second electrode pad and a third electrode pad disposed on the second semiconductor layer in a direction from a corner of the second semiconductor layer to an opposite corner of the second semiconductor layer. An LED includes a first electrode pad disposed at a center of the LED and in contact with a P-type semiconductor layer and a second electrode pad in contact with an N-type semiconductor layer, wherein the second electrode pad is disposed a maximum distance away from the first electrode pad on the same surface.
-
公开(公告)号:US20230141485A1
公开(公告)日:2023-05-11
申请号:US17735747
申请日:2022-05-03
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hyunjoon KIM , Dongkyun Kim , Joonyong Park , Seogwoo Hong , Kyungwook Hwang , Junsik Hwang
IPC: H01L25/13 , H01L21/673
CPC classification number: H01L25/13 , H01L21/67333
Abstract: A device transfer substrate includes a plurality of recesses, wherein each of the plurality of recesses includes a first region having a shape of a first figure, a second region having a shape of a second figure, and an overlapping region formed as a portion of the first region partially overlaps a portion of the second region, wherein a maximum width of the overlapping region in a direction intersecting with a straight line passing through a center of the first figure and a center of the second figure is less than a diameter or a diagonal length of the first figure and less than a diameter or a diagonal length of the second figure.
-
58.
公开(公告)号:US11621367B2
公开(公告)日:2023-04-04
申请号:US16933187
申请日:2020-07-20
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Junsik Hwang , Kyungwook Hwang
IPC: H01L33/38 , H01L33/00 , H01L33/24 , H01L33/40 , H01L33/44 , H01L25/075 , H01L33/32 , H01L33/12 , H01L33/42
Abstract: A light-emitting diode (LED) device includes a light-emitting layer having a core-shell structure that comprises a first semiconductor layer, an active layer, and a second semiconductor layer; a passivation layer formed to cover at least a portion of a side surface and a portion of an upper surface of the second semiconductor layer; a first electrode formed on a portion of the passivation layer that is located on a side surface of the light-emitting layer, the first electrode electrically connected to the first semiconductor layer and including a reflective material; and a second electrode formed on a portion of the passivation layer that is located on an upper surface of the light-emitting layer, the second electrode contacting a portion of the upper surface of the second semiconductor layer that is exposed.
-
公开(公告)号:US20220149017A1
公开(公告)日:2022-05-12
申请号:US17582854
申请日:2022-01-24
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Kyungwook Hwang , Sungjin Kang , Junsik Hwang , Junhee Choi
IPC: H01L25/075 , H01L33/60
Abstract: Provided is a display device including a substrate, a transfer guiding mold provided on the substrate and including a plurality of openings, and a plurality of micro light emitting diodes (LEDs) provided on the substrate in the plurality of openings, wherein a height of the transfer guiding mold is less than twice a height of each of the plurality of micro LEDs.
-
公开(公告)号:US20220029046A1
公开(公告)日:2022-01-27
申请号:US17171636
申请日:2021-02-09
Applicant: Samsung Electronics Co., Ltd.
Inventor: Seogwoo Hong , Junsik Hwang , Hyunjoon Kim , Joonyong Park , Kyungwook Hwang
IPC: H01L33/00 , H01L25/075
Abstract: A method of transferring micro-light emitting diodes is provided. The method includes preparing a transfer substrate including a first groove, a second groove, and a third groove; forming a first transfer prevention film on the second groove and forming a second transfer prevention film on the third groove; transferring, into the first groove, a first micro-light emitting diode configured to emit a first color light; removing the first transfer prevention film formed on the second groove; transferring, into the second groove, a second micro-light emitting diode configured to emit a second color light; removing the second transfer prevention film formed on the third groove; and transferring, into the third groove, a third micro-light emitting diode configured to emit a third color light.
-
-
-
-
-
-
-
-
-