公开(公告)号：US20200051966A1

公开(公告)日：2020-02-13

申请号：US16373502

申请日：2019-04-02

Applicant: Samsung Display Co., Ltd.

Inventor： Seung Chan Lee ,  Gun Hee Kim ,  Sang Ho Park ,  Ju Won Yoon ,  Joo Hee Jeon ,  Hyun Joon Kim

IPC: H01L25/18 ,  H01L25/00 ,  H01L51/00 ,  H01L27/32

Abstract: A display device and a method for fabricating the same. The display device includes a substrate including a circuit layer and a first pad unit; an auxiliary substrate disposed below the substrate and comprising a driving circuit and a second pad unit; a light-emitting unit disposed on the circuit layer; and a connection electrode in contact with a side surface of the substrate and electrically connecting the first pad unit with the second pad unit. The method includes forming a circuit layer and a first pad unit on a first surface of a substrate; forming a driving circuit and a second pad unit on a fourth surface of an auxiliary substrate; and attaching a second surface of the substrate opposite the first surface to a third surface of the auxiliary substrate opposite the fourth surface.

公开(公告)号：US09449990B2

公开(公告)日：2016-09-20

申请号：US14423838

申请日：2013-08-30

Applicant: KOBE STEEL, LTD. ,  Samsung Display Co., Ltd.

Inventor： Aya Miki ,  Shinya Morita ,  Hiroshi Goto ,  Hiroaki Tao ,  Toshihiro Kugimiya ,  Byung Du Ahn ,  Gun Hee Kim ,  Jin Hyun Park ,  Yeon Hong Kim

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/51 ,  H01L29/40 ,  H01L21/02

CPC classification number: H01L27/1225 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L29/408 ,  H01L29/4908 ,  H01L29/51 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

Abstract: Provided is a thin film transistor which is provided with an oxide semiconductor thin film layer and has a threshold voltage that does not change much due to light, a bias stress or the like, thereby exhibiting excellent stress stability. A thin film transistor of the present invention is provided with a gate electrode, an oxide semiconductor layer composed of a single layer which is used as a channel layer, an etch stopper layer to protect a surface of the oxide semiconductor layer, a source-drain electrode, and a gate insulator layer arranged between the gate electrode and the channel layer. The metal elements constituting the oxide semiconductor layer comprise In, Zn and Sn. The hydrogen concentration in the gate insulator layer in direct contact with the oxide semiconductor layer is controlled to 4 atomic % or lower.

Abstract translation: 提供一种薄膜晶体管，其设置有氧化物半导体薄膜层，并且具有由于光，偏压应力等而不会变化太大的阈值电压，从而表现出优异的应力稳定性。 本发明的薄膜晶体管设置有栅电极，由用作沟道层的单层组成的氧化物半导体层，用于保护氧化物半导体层的表面的蚀刻停止层，源极 - 漏极 电极和布置在栅电极和沟道层之间的栅极绝缘体层。 构成氧化物半导体层的金属元素包括In，Zn和Sn。 与氧化物半导体层直接接触的栅极绝缘体层中的氢浓度被控制在4原子％以下。

公开(公告)号：US09324882B2

公开(公告)日：2016-04-26

申请号：US14721779

申请日：2015-05-26

Applicant: Kobe Steel, Ltd. ,  Samsung Display Co., Ltd

Inventor： Hiroshi Goto ,  Aya Miki ,  Tomoya Kishi ,  Kenta Hirose ,  Shinya Morita ,  Toshihiro Kugimiya ,  Byung Du Ahn ,  Gun Hee Kim ,  Yeon Hong Kim

IPC: H01L29/786 ,  H01L27/12 ,  H01L21/02 ,  C23C14/08 ,  H01L29/24

CPC classification number: H01L29/78693 ,  C23C14/08 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/78606 ,  H01L29/78696

Abstract: A thin film transistor containing at least, a gate electrode, a gate insulating film, an oxide semiconductor layer, source-drain electrode and a passivation film, in this order on a substrate. The oxide semiconductor layer is a laminate containing a first oxide semiconductor layer (IGZTO) and a second oxide semiconductor layer (IZTO). The second oxide semiconductor layer is formed on the gate insulating film, and the first oxide semiconductor layer is formed between the second oxide semiconductor layer and the passivation film. The contents of respective metal elements relative to the total amount of all the metal elements other than oxygen in the first oxide semiconductor layer are as follows; Ga: 8% or more and 30% or less; In: 25% or less, excluding 0%; Zn: 35% or more to 65% or less; and Sn: 5% or more to 30% or less.

Abstract translation: 至少在基板上至少含有栅极，栅极绝缘膜，氧化物半导体层，源极 - 漏极和钝化膜的薄膜晶体管。 氧化物半导体层是含有第一氧化物半导体层（IGZTO）和第二氧化物半导体层（IZTO）的层压体。 第二氧化物半导体层形成在栅极绝缘膜上，第一氧化物半导体层形成在第二氧化物半导体层和钝化膜之间。 各金属元素相对于第一氧化物半导体层中除氧以外的全部金属元素的总量的含量如下： Ga：8％以上且30％以下; 在：25％以下，不含0％; Zn：35％以上65％以下; 和Sn：5％以上至30％以下。

公开(公告)号：US20150228674A1

公开(公告)日：2015-08-13

申请号：US14423838

申请日：2013-08-30

Applicant: KABUSHIKI KAISHA KOBE SEIKO SHO (KOBE STEEL, LTD.) ,  Samsung Display Co., Ltd.

Inventor： Aya Miki ,  Shinya Morita ,  Hiroshi Goto ,  Hiroaki Tao ,  Toshihiro Kugimiya ,  Byung Du Ahn ,  Gun Hee Kim ,  Jin Hyun Park ,  Yeon Hong Kim

IPC: H01L27/12 ,  H01L29/40 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L29/408 ,  H01L29/4908 ,  H01L29/51 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

Abstract: Provided is a thin film transistor which is provided with an oxide semiconductor thin film layer and has a threshold voltage that does not change much due to light, a bias stress or the like, thereby exhibiting excellent stress stability. A thin film transistor of the present invention is provided with a gate electrode, an oxide semiconductor layer composed of a single layer which is used as a channel layer, an etch stopper layer to protect a surface of the oxide semiconductor layer, a source-drain electrode, and a gate insulator layer arranged between the gate electrode and the channel layer. The metal elements constituting the oxide semiconductor layer comprise In, Zn and Sn. The hydrogen concentration in the gate insulator layer in direct contact with the oxide semiconductor layer is controlled to 4 atomic % or lower.

Abstract translation: 提供一种薄膜晶体管，其设置有氧化物半导体薄膜层，并且具有由于光，偏压应力等而不会变化太大的阈值电压，从而表现出优异的应力稳定性。 本发明的薄膜晶体管设置有栅电极，由用作沟道层的单层组成的氧化物半导体层，用于保护氧化物半导体层的表面的蚀刻停止层，源极 - 漏极 电极和布置在栅电极和沟道层之间的栅极绝缘体层。 构成氧化物半导体层的金属元素包括In，Zn和Sn。 与氧化物半导体层直接接触的栅极绝缘体层中的氢浓度被控制在4原子％以下。

公开(公告)号：US12262603B2

公开(公告)日：2025-03-25

申请号：US17537512

申请日：2021-11-30

Applicant: Samsung Display Co., LTD.

Inventor： Sun Ho Kim ,  Ju Chan Park ,  Yoo Min Ko ,  Gun Hee Kim ,  Tae Hoon Yang ,  Sun Hee Lee ,  Ja Eun Lee

IPC: H10K59/131 ,  H10K59/121

Abstract: A display device includes: a substrate having a first display area and a second display area. A first pixel circuit portion is disposed on the substrate. A first emitting diode includes a first pixel electrode connected to the first pixel circuit portion. A second pixel circuit portion is disposed on a second display area of the substrate. An extension wire is connected to the second pixel circuit portion. A second emitting diode includes a second pixel electrode connected to the extension wire, and a driving circuit portion is connected to the first pixel circuit portion and the second pixel circuit portion, and overlaps the second emitting diode. The extension wire is disposed in a different layer from the second pixel electrode.

公开(公告)号：US12165598B2

公开(公告)日：2024-12-10

申请号：US18215628

申请日：2023-06-28

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jin Wook Yang ,  Gun Hee Kim ,  Sun Young Jung

IPC: G09G3/3266 ,  G09G3/3275

Abstract: A display device includes: a pixel, a scan driver, an emission driver, and a data driver. The pixel includes: a light emitting element; a first transistor; a second transistor connected between a data line and a first node; a third transistor connected between a second node and a third node connected to a gate electrode of the first transistor; a fourth transistor connected between the second node and a third power line; a fifth transistor connected between the first node and a fourth node; a sixth transistor connected between a first power line and the first node and which is turned off in response to a first emission control signal; a storage capacitor connected between the third node and the fourth node; and a first capacitor connected between the first power line and the fourth node.

公开(公告)号：US12127433B2

公开(公告)日：2024-10-22

申请号：US17266496

申请日：2019-05-22

Applicant: Samsung Display Co., LTD.

Inventor： Gun Hee Kim ,  Sang Ho Park ,  Joo Hee Jeon ,  Young-Cheol Jeong

IPC: H10K59/121 ,  G09G3/3291 ,  H01L29/786 ,  H10K59/131

CPC classification number: H10K59/1213 ,  G09G3/3291 ,  H01L29/78696 ,  H10K59/131

Abstract: A display device includes: a substrate; and a transistor on the substrate. The transistor includes: a semiconductor layer; a gate electrode overlapping with the semiconductor layer; a first gate contact overlapping layer overlapping with a channel region, and in contact with the gate electrode, the channel region being a region where the gate electrode and the semiconductor layer are overlapped with each other; and a semiconductor contact overlapping layer overlapping with the channel region, and in contact with the semiconductor layer. The first gate contact overlapping layer and the semiconductor contact overlapping layer are spaced apart from each other by a gap within the channel region.

公开(公告)号：US12094865B2

公开(公告)日：2024-09-17

申请号：US17841247

申请日：2022-06-15

Applicant: Samsung Display Co. Ltd.

Inventor： Seung Chan Lee ,  Gun Hee Kim ,  Sang Ho Park ,  Ju Won Yoon ,  Joo Hee Jeon ,  Hyun Joon Kim

IPC: H01L25/18 ,  H01L25/00 ,  H10K59/131 ,  H10K59/18 ,  H10K77/10

CPC classification number: H01L25/18 ,  H01L25/50 ,  H10K59/131 ,  H10K59/18 ,  H10K77/10

Abstract: A display device and a method for fabricating the same. The display device includes a substrate including a circuit layer and a first pad unit; an auxiliary substrate disposed below the substrate and comprising a driving circuit and a second pad unit; a light-emitting unit disposed on the circuit layer; and a connection electrode in contact with a side surface of the substrate and electrically connecting the first pad unit with the second pad unit. The method includes forming a circuit layer and a first pad unit on a first surface of a substrate; forming a driving circuit and a second pad unit on a fourth surface of an auxiliary substrate; and attaching a second surface of the substrate opposite the first surface to a third surface of the auxiliary substrate opposite the fourth surface.

公开(公告)号：US11990079B2

公开(公告)日：2024-05-21

申请号：US17465845

申请日：2021-09-03

Applicant: Samsung Display Co., Ltd.

Inventor： Sunho Kim ,  Juchan Park ,  Gun Hee Kim ,  Hyewon Kim ,  Taehoon Yang ,  Sun Hee Lee ,  Joohee Jeon ,  Sungjin Hong

IPC: G09G3/20

CPC classification number: G09G3/2092 ,  G09G2310/027 ,  G09G2320/0673

Abstract: A display device includes a display panel including a plurality of first pixels disposed in a first display area and a plurality of second pixels disposed in a second display area adjacent to the first display area, a gate driver disposed in the second display area of the display panel to overlap a portion of the second pixels and driving the first and second pixels, a controller receiving image data and converting the image data to image signals, and a data driver converting the image signals to data signals and outputting the data signals to the first and second pixels. The controller compensates for effective data corresponding to the second pixels and reflects the compensated effective data to the image signals.

公开(公告)号：US20240138196A1

公开(公告)日：2024-04-25

申请号：US18370419

申请日：2023-09-19

Applicant: Samsung Display Co., Ltd.

Inventor： KWANG SOO BAE ,  Gun Hee Kim ,  Sun Hee Lee ,  Min Oh Choi

IPC: H10K59/122 ,  G06F21/32 ,  G06V40/13 ,  H10K59/38 ,  H10K59/40 ,  H10K59/65 ,  H10K59/80

CPC classification number: H10K59/122 ,  G06F21/32 ,  G06V40/1306 ,  H10K59/38 ,  H10K59/40 ,  H10K59/65 ,  H10K59/873 ,  H10K59/8792

Abstract: A display device including a display panel including a display area including emission areas and a non-emission area adjacent to the emission areas, wherein the display panel includes: a pixel defining layer that includes first openings corresponding to the emission areas and a second opening corresponding to the non-emission area; light emitting elements each including a first electrode, a second electrode, and a light emitting layer disposed between the first electrode and the second electrode, wherein each of the light emitting elements is disposed in a corresponding one of the first openings; and a photovoltaic element including a first cell electrode, a second cell electrode, and an optical photovoltaic layer disposed between the first cell electrode and the second cell electrode, wherein the photovoltaic element is disposed in the second opening.