公开(公告)号：US07745327B2

公开(公告)日：2010-06-29

申请号：US11761444

申请日：2007-06-12

申请人： Axel Preusse ,  Michael Friedemann ,  Robert Seidel ,  Berit Freudenberg

发明人： Axel Preusse ,  Michael Friedemann ,  Robert Seidel ,  Berit Freudenberg

IPC分类号： H01L21/4763

CPC分类号： H01L23/53238 ,  H01L21/76802 ,  H01L21/76805 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L2924/0002 ,  H01L2924/00

摘要： By appropriately designing a plurality of deposition steps and intermediate sputter processes, the formation of a barrier material within a via opening may be accomplished on the basis of a highly efficient process strategy that readily integrates conductive cap layers formed above metal-containing regions into well-approved process sequences.

摘要翻译： 通过适当地设计多个沉积步骤和中间溅射工艺，通孔开口内的阻挡材料的形成可以基于高效的工艺策略来实现，该方法可以容易地将形成在含金属区域上方的导电盖层整合到井下， 批准的过程序列。

公开(公告)号：US20100133648A1

公开(公告)日：2010-06-03

申请号：US12604703

申请日：2009-10-23

申请人： Robert Seidel ,  Markus Nopper ,  Axel Preusse

发明人： Robert Seidel ,  Markus Nopper ,  Axel Preusse

IPC分类号： H01L29/06 ,  H01L21/764

CPC分类号： H01L21/7682 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76852 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： In sophisticated metallization systems, air gaps may be formed on the basis of a self-aligned patterning regime during which the conductive cap material of metal lines may be protected by providing one or more materials, which may subsequently be removed. Consequently, the etch behavior and the electrical characteristics of metal lines during the self-aligned patterning regime may be individually adjusted.

摘要翻译： 在复杂的金属化系统中，可以基于自对准图案化形态来形成气隙，在此期间金属线的导电盖材料可以通过提供一种或多种随后可以被去除的材料来保护。 因此，可以单独地调整在自对准图案化状态期间的金属线的蚀刻行为和电特性。

公开(公告)号：US07326465B2

公开(公告)日：2008-02-05

申请号：US11211168

申请日：2005-08-23

申请人： Robert Seidel ,  Franz Kreupl ,  Andrew Graham

发明人： Robert Seidel ,  Franz Kreupl ,  Andrew Graham

IPC分类号： B32B9/00

CPC分类号： H01L21/76876 ,  B82Y10/00 ,  H01L21/76802 ,  H01L21/76879 ,  H01L23/5226 ,  H01L23/53276 ,  H01L2221/1078 ,  H01L2221/1094 ,  H01L2924/0002 ,  Y10T428/12535 ,  Y10T428/12576 ,  Y10T428/12611 ,  Y10T428/24917 ,  Y10T428/30 ,  H01L2924/00

摘要： An integrated electronic component having a substrate, a metal multilayer system, which is arranged at least on regions of the substrate, and a nonconductive layer, which is arranged on the metal multilayer system and has at least one contact hole, in which at least one carbon nanotube is grown on the metal multilayer system at the bottom of the contact hole. The metal multilayer system includes a high-melting metal layer, a metal separating layer, a catalyst layer, and a final metal separating layer. The high-melting metal layer is composed of at least one of tantalum, molybdenum, and tungsten. The metal separating layer is composed of aluminum, gold, or silver. The catalyst layer is composed of at least one of iron, cobalt, nickel, yttrium, titanium, platinum, and palladium, and a combination thereof. The final metal separating layer, which is arranged above the catalyst layer, is composed of aluminum.

摘要翻译： 一种集成电子部件，其具有衬底，至少布置在所述衬底的区域上的金属多层系统和非导电层，所述非导电层布置在所述金属多层系统上并具有至少一个接触孔，其中至少一个 碳纳米管在接触孔底部的金属多层体系上生长。 金属多层体系包括高熔点金属层，金属分离层，催化剂层和最终金属分离层。 高熔点金属层由钽，钼和钨中的至少一种构成。 金属分离层由铝，金或银构成。 催化剂层由铁，钴，镍，钇，钛，铂和钯中的至少一种及其组合构成。 设置在催化剂层上方的最终金属分离层由铝构成。

公开(公告)号：US20080003826A1

公开(公告)日：2008-01-03

申请号：US11674869

申请日：2007-02-14

申请人： Thomas Werner ,  Robert Seidel ,  Frank Feustel

发明人： Thomas Werner ,  Robert Seidel ,  Frank Feustel

IPC分类号： H01L21/302

CPC分类号： H01L21/31144 ,  H01L21/31051 ,  H01L21/31053 ,  H01L21/31058 ,  H01L21/76808 ,  H01L21/76816 ,  H01L21/76819

摘要： By additionally planarizing the surface topography of a planarization layer, which may be accomplished on the basis of mechanical contact, a uniform force, a polishing process and the like, an enhanced surface topography may be provided which may be advantageously used in subsequent patterning processes, such as photolithography, imprint techniques and the like.

摘要翻译： 通过额外地平坦化平面化层的表面形貌，其可以基于机械接触，均匀的力，抛光工艺等来实现，可以提供可以有利地用于随后的图案化工艺中的增强的表面形貌， 例如光刻，印记技术等。

公开(公告)号：US5815480A

公开(公告)日：1998-09-29

申请号：US708738

申请日：1996-09-05

申请人： Robert Seidel

发明人： Robert Seidel

IPC分类号： G11B7/007 ,  G11B7/26 ,  G11B27/30 ,  G11B33/10 ,  G11B3/90

CPC分类号： G11B27/3027 ,  G11B7/26 ,  G11B2220/2545 ,  G11B33/10 ,  G11B7/007

摘要： A process for determining the Start Program Point for a compact disc recording of data first recorded on an other medium, by measuring with the aid of a microscope the radius of the transition from the first pit/land transition from silence to data, measuring with the aid of an editor for the other medium a delay period of silence intended to be part of the data, calculating the Start Program Point and recording the Start Program Point thus calculated on the compact disc.

摘要翻译： 通过借助于显微镜测量从第一个坑/从平静转移到数据的过渡的半径，确定用于首先记录在另一介质上的数据的光盘记录的开始节目点的过程，用 辅助编辑器为其他介质设置一个默认为数据的一部分的静默延迟时间，计算起始程序点并记录在光盘上计算的起始程序点。