公开(公告)号：US10684373B2

公开(公告)日：2020-06-16

申请号：US15972409

申请日：2018-05-07

Applicant: OmniVision Technologies, Inc.

Inventor： Sohei Manabe ,  Keiji Mabuchi

IPC: H01L27/146 ,  H04N5/374 ,  H04N5/378 ,  G01S17/89 ,  G01S7/4863 ,  H04N13/254

Abstract: An image sensor including a photodiode, a first doped region, a second doped region, a first storage node, a second storage node, a first vertical transfer gate, and a second vertical transfer gate is presented. The photodiode is disposed in a semiconductor material to convert image light to an electric signal. The first doped region and the second doped region are disposed in the semiconductor material between a first side of the semiconductor material and the photodiode. The first doped region is positioned between the first storage node and the second storage node while the second doped region is positioned between the second storage node and the first doped region. The vertical transfer gates are coupled between the photodiode to transfer the electric signal from the photodiode to a respective one of the storage nodes in response to a signal.

公开(公告)号：US10582178B2

公开(公告)日：2020-03-03

申请号：US15341374

申请日：2016-11-02

Applicant: OmniVision Technologies, Inc.

Inventor： Zheng Yang ,  Eiichi Funatsu ,  Sohei Manabe ,  Keiji Mabuchi ,  Dajiang Yang ,  Duli Mao ,  Bowei Zhang

IPC: H04N13/00 ,  H04N13/106 ,  H01L27/146 ,  H04N5/3745 ,  H04N13/271 ,  G06T7/586 ,  G06T7/593 ,  G01B11/24 ,  H04N13/254 ,  G06T5/00 ,  G06T5/50 ,  H04N5/353 ,  H04N5/378

Abstract: An active depth imaging system and method of operating the same captures illuminator-on and illuminator-off image data with each of a first and second imager. The illuminator-on image data includes information representing an imaged scene and light emitted from an illuminator and reflected off of objects within the imaged scene. The illuminator-off image data includes information representing the imaged scene without the light emitted from the illuminator. For each image set captured by the first and second imagers, illuminator-off image data is subtracted from the illuminator-on image data to identify the illuminated light within the scene. The depth of an object at which the light is incident on then is determined by the subtracted image data of the first and second imagers.

公开(公告)号：US10483303B1

公开(公告)日：2019-11-19

申请号：US16179080

申请日：2018-11-02

Applicant: Omnivision Technologies, Inc.

Inventor： Keiji Mabuchi ,  Sohei Manabe

IPC: H01L31/00 ,  H01L27/146 ,  H04N5/378 ,  H04N5/3745

Abstract: An image sensor is provided. The image sensor includes: a first pixel column, including: a first pixel unit; a second pixel unit, vertically adjacent to the first pixel unit; a first column bit line coupled to the first pixel unit, wherein image data acquired by the first pixel unit is read out through the first column bit line; and a second column bit line coupled to the second pixel unit, wherein image data acquired by the second pixel unit is read out through the second column bit line; and a second pixel column horizontally adjacent to the first pixel column, wherein the first pixel column and the second pixel column are mirror-symmetrical with respect to a connection between the pixel units and the column bit lines.

公开(公告)号：US20190339392A1

公开(公告)日：2019-11-07

申请号：US15972409

申请日：2018-05-07

Applicant: OmniVision Technologies, Inc.

Inventor： Sohei Manabe ,  Keiji Mabuchi

IPC: G01S17/89 ,  H01L27/146 ,  G01S7/486 ,  H04N5/378 ,  H04N13/254 ,  H04N5/374

Abstract: An image sensor including a photodiode, a first doped region, a second doped region, a first storage node, a second storage node, a first vertical transfer gate, and a second vertical transfer gate is presented. The photodiode is disposed in a semiconductor material to convert image light to an electric signal. The first doped region and the second doped region are disposed in the semiconductor material between a first side of the semiconductor material and the photodiode. The first doped region is positioned between the first storage node and the second storage node while the second doped region is positioned between the second storage node and the first doped region. The vertical transfer gates are coupled between the photodiode to transfer the electric signal from the photodiode to a respective one of the storage nodes in response to a signal.

公开(公告)号：US10269846B2

公开(公告)日：2019-04-23

申请号：US15799198

申请日：2017-10-31

Applicant: OmniVision Technologies, Inc.

Inventor： Sohei Manabe ,  Keiji Mabuchi ,  Takayuki Goto ,  Dajiang Yang

IPC: H01L27/146 ,  H01L31/0232

Abstract: A method of backside illuminated image sensor fabrication includes forming a plurality of photodiodes in a semiconductor material, where the plurality of photodiodes are disposed to receive image light through a backside of the backside illuminated image sensor. The method further includes forming a transfer gate coupled to extract image charge from a photodiode in the plurality of photodiodes, and forming a storage gate coupled to the transfer gate to receive the image charge. Forming the storage gate includes forming an optical shield in the semiconductor material; depositing a gate electrode proximate to a frontside of the semiconductor material; and implanting a storage node in the semiconductor material, where the storage node is disposed in the semiconductor material between the optical shield and the gate electrode.

公开(公告)号：US10062722B2

公开(公告)日：2018-08-28

申请号：US15284961

申请日：2016-10-04

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Sohei Manabe ,  Keiji Mabuchi ,  Takayuki Goto ,  Vincent Venezia ,  Boyd Albert Fowler ,  Eric A. G. Webster

IPC: H01L27/148 ,  H01L27/146

CPC classification number: H01L27/14634 ,  H01L27/14612 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/1469

Abstract: An image sensor includes a pixel array having plurality of pixel cells arranged into a plurality of rows and a plurality of columns of pixel cells in a first semiconductor die. A plurality of pixel support circuits are arranged in a second semiconductor die that is stacked and coupled together with the first semiconductor die. A plurality of interconnect lines are coupled between the first and second semiconductor dies, and each one of the plurality of pixel cells is coupled to a corresponding one of the plurality of pixel support circuits through a corresponding one plurality of interconnect lines. A plurality of shield bumps are disposed proximate to corners of the pixel cells in the pixel array and between the first and second semiconductor dies such that each one of the plurality of shield bumps is disposed between adjacent interconnect lines along a diagonal of the pixel array.

公开(公告)号：US20180151610A1

公开(公告)日：2018-05-31

申请号：US15799198

申请日：2017-10-31

Applicant: OmniVision Technologies, Inc.

Inventor： Sohei Manabe ,  Keiji Mabuchi ,  Takayuki Goto ,  Dajiang Yang

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/1461 ,  H01L27/14614 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14689 ,  H01L31/02327

Abstract: A method of backside illuminated image sensor fabrication includes forming a plurality of photodiodes in a semiconductor material, where the plurality of photodiodes are disposed to receive image light through a backside of the backside illuminated image sensor. The method further includes forming a transfer gate coupled to extract image charge from a photodiode in the plurality of photodiodes, and forming a storage gate coupled to the transfer gate to receive the image charge. Forming the storage gate includes forming an optical shield in the semiconductor material; depositing a gate electrode proximate to a frontside of the semiconductor material; and implanting a storage node in the semiconductor material, where the storage node is disposed in the semiconductor material between the optical shield and the gate electrode.

公开(公告)号：US20180006076A1

公开(公告)日：2018-01-04

申请号：US15198055

申请日：2016-06-30

Applicant: OmniVision Technologies, Inc.

Inventor： Takayuki Goto ,  Dajiang Yang ,  Keiji Mabuchi ,  Sohei Manabe

IPC: H01L27/146 ,  H01L31/105 ,  H01L31/113

CPC classification number: H01L27/14645 ,  H01L27/14649 ,  H01L31/105 ,  H01L31/1136

Abstract: An image sensor includes a substrate and a plurality of infrared pixels formed in a front side of the substrate and configured to detect infrared light incident on the front side of the substrate. Each of the infrared pixels includes a photodiode, a region free of implants located above the photodiode, and a photogate formed over the substrate and above the photodiode. The image sensor also includes a plurality of color pixels dispersed among the infrared pixels, where each of the color pixels includes a pinned photodiode and is configured to detect visible light. The photodiode of each of the infrared pixels can include a deep charge-accumulation region underlying the pinned photodiode(s) of one or more neighboring color pixel(s). Methods of manufacturing also described and include forming the deep charge-accumulation regions and associated elements prior to forming any implant-blocking elements (e.g., polysilicon photogates) over the substrate.

公开(公告)号：US09711546B2

公开(公告)日：2017-07-18

申请号：US15059182

申请日：2016-03-02

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Jeong-Ho Lyu ,  Sohei Manabe

IPC: H01L31/068 ,  H01L27/146

CPC classification number: H01L27/14605 ,  H01L27/14607 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14627 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14645

Abstract: An image sensor pixel includes a first photodiode and a second photodiode disposed in a semiconductor material. The first photodiode has a first doped region, a first lightly doped region, and a first highly doped region. The second photodiode has a second full well capacity substantially equal to a first full well capacity of the first photodiode, and includes a second doped region, a second lightly doped region, and a second highly doped region. The image sensor pixel also includes a first microlens optically coupled to direct a first amount of image light to the first photodiode, and a second microlens optically coupled to direct a second amount of image light to the second photodiode. The first amount of image light is larger than the second amount of image light.

公开(公告)号：US09608019B2

公开(公告)日：2017-03-28

申请号：US15059196

申请日：2016-03-02

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Jeong-Ho Lyu ,  Sohei Manabe

IPC: H01L27/146

CPC classification number: H01L27/14605 ,  H01L27/14607 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14627 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14645

Abstract: An image sensor pixel for use in a high dynamic range image sensor includes a first photodiode and a second photodiode. The first photodiode include a first doped region, a first lightly doped region, and a first highly doped region disposed between the first doped region and the first lightly doped region. The second photodiode disposed in has a second full well capacity substantially equal to a first full well capacity of the first photodiode. The second photodiode includes a second doped region, a second lightly doped region, and a second highly doped region disposed between the second doped region and the second lightly doped region. A first aperture sizer is disposed above the second photodiode to limit image light received by the second photodiode to a second amount that is less than a first amount of image light received by the first photodiode.