公开(公告)号：US20200350161A1

公开(公告)日：2020-11-05

申请号：US16861900

申请日：2020-04-29

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Michael X. Yang ,  Hua Chung ,  Xinliang Lu

IPC: H01L21/02

Abstract: Processes for selective deposition of material on a workpiece are provided. In one example, the method includes placing a workpiece on a workpiece support in a processing chamber. The workpiece has a first material and a second material. The second material is different from the first material. The method includes performing an organic radical based surface treatment process on the workpiece to modify an adsorption characteristic of the first material selectively relative to the second material such that the first material has a first adsorption characteristic and the second material has a second adsorption characteristic. The second adsorption characteristic being different from the first adsorption characteristic. The method includes performing a deposition process on the workpiece such that a material is selectively deposited on the first material relative to the second material.

公开(公告)号：US10804109B2

公开(公告)日：2020-10-13

申请号：US15958635

申请日：2018-04-20

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology, Co., LTD

Inventor： Michael X. Yang ,  Hua Chung ,  Xinliang Lu

IPC: H01L21/30 ,  C23C16/452 ,  H01L21/302 ,  H01L21/311 ,  H01L21/3213 ,  B01D67/00 ,  C23F1/12 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/02 ,  H01J37/32 ,  H01L21/027 ,  H01L21/768 ,  C23F4/00

Abstract: Surface treatment processes for treating low-k dielectric materials are provided. One example implementation can include a method for processing a workpiece. The workpiece can include a silicon and carbon containing film material. The method can include treating the workpiece with a surface treatment process. The surface treatment process can include generating one or more species in a first chamber; mixing one or more hydrocarbon molecules with the species to create a mixture comprising one or more organic radicals; and exposing the silicon and carbon containing layer on the workpiece to the mixture in a second chamber.

公开(公告)号：US20200243305A1

公开(公告)日：2020-07-30

申请号：US16744244

申请日：2020-01-16

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology, Co., LTD

Inventor： Weimin Zeng ,  Chun Yan ,  Dixit V. Desai ,  Hua Chung ,  Michael X. Yang ,  Peter Lembesis ,  Ryan M. Pakulski ,  Martin Zucker

IPC: H01J37/32

Abstract: A plasma process apparatus is provided. The plasma processing apparatus includes a plasma chamber and a processing chamber. The processing chamber includes a substrate holder operable to support a substrate. The plasma processing apparatus further includes a separation grid separating the plasma chamber from the processing chamber. The separation grid includes a gas delivery system. The gas delivery system defines a channel, an inlet and a plurality of outlets in fluid communication with the inlet via the channel. The gas delivery system is configured to reduce non-uniformities associated with a treatment process performed on the substrate.

公开(公告)号：US20200185216A1

公开(公告)日：2020-06-11

申请号：US16522193

申请日：2019-07-25

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology, Co., LTD.

Inventor： Michael X. Yang ,  Hua Chung ,  Xinliang Lu ,  Haochen Li ,  Ting Xie ,  Qi Zhang

IPC: H01L21/02 ,  H01L21/285 ,  H01J37/32 ,  H01L21/67 ,  H01L21/3213

Abstract: Processes for surface treatment of a workpiece are provided. In one example implementation, organic radicals (e.g., methyl CH3 radicals) can be generated by exciting and/or dissociating hydrogen and/or inert gas (e.g., Ar, He, etc) molecules in a remote plasma source and a subsequent reaction with organic molecule (alkanes and alkenes). The organic radicals (e.g., methyl CH3 radicals) can be exposed to the silicon and/or silicon germanium surfaces. After exposure to the organic radicals, the silicon and/or silicon germanium surfaces can be stable in air for a time period (e.g., days) with reduced surface oxidation such that the silicon and/or silicon germanium surfaces can be effectively protected from oxidation. As such, native surface oxide removal process before subsequent process steps can be eliminated.

公开(公告)号：US20190304793A1

公开(公告)日：2019-10-03

申请号：US16444146

申请日：2019-06-18

Applicant: Mattson Technology, Inc.

Inventor： Michael X. Yang ,  Hua Chung ,  Xinliang Lu

IPC: H01L21/30 ,  H01L21/3213 ,  B01D67/00 ,  H01L21/302 ,  C23C16/452 ,  H01L21/311 ,  C23F1/12 ,  H01L21/02 ,  H01J37/32 ,  H01L21/768 ,  H01L21/027

Abstract: Processes for surface treatment of a workpiece are provided. In one example implementation, a method can include performing an organic radical based surface treatment process on a workpiece. The organic radical based surface treatment process can include generating one or more species in a first chamber. The surface treatment process can include mixing one or more hydrocarbon molecules with the species to create a mixture. The mixture can include one or more organic radicals. The surface treatment process can include exposing a semiconductor material on the workpiece to the mixture in a second chamber.

公开(公告)号：US20190214262A1

公开(公告)日：2019-07-11

申请号：US16357800

申请日：2019-03-19

Applicant: Mattson Technology, Inc.

Inventor： Michael X. Yang ,  Hua Chung ,  Xinliang Lu

IPC: H01L21/30 ,  H01L21/3213 ,  H01L21/311 ,  B01D67/00 ,  C23C16/452 ,  C23F1/12 ,  H01L21/302

Abstract: Surface treatment processes for treating a workpiece with organic radicals are provided. In one example implementation, a method for processing a workpiece having a semiconductor material and a carbon containing layer (e.g., photoresist) can include a surface treatment process on the workpiece. The surface treatment process can include generating one or more species in a first chamber (e.g., a plasma chamber). The surface treatment process can include mixing one or more hydrocarbon radicals with the species to create a mixture. The surface treatment process can include exposing the carbon containing layer to the mixture in a second chamber (e.g., a processing chamber).

公开(公告)号：US10269574B1

公开(公告)日：2019-04-23

申请号：US15958601

申请日：2018-04-20

Applicant: Mattson Technology, Inc.

Inventor： Michael X. Yang ,  Hua Chung ,  Xinliang Lu

IPC: H01L21/30 ,  B01D67/00 ,  C23F1/12 ,  H01L21/3213 ,  H01L21/311 ,  H01L21/302 ,  C23C16/452

Abstract: Surface treatment processes for treating a workpiece with organic radicals are provided. In one example implementation, a method for processing a workpiece having a semiconductor material and a carbon containing layer (e.g., photoresist) can include a surface treatment process on the workpiece. The surface treatment process can include generating one or more species in a first chamber (e.g., a plasma chamber). The surface treatment process can include mixing one or more hydrocarbon radicals with the species to create a mixture. The surface treatment process can include exposing the carbon containing layer to the mixture in a second chamber (e.g., a processing chamber).

公开(公告)号：US20190103280A1

公开(公告)日：2019-04-04

申请号：US15958601

申请日：2018-04-20

Applicant: Mattson Technology, Inc.

Inventor： Michael X. Yang ,  Hua Chung ,  Xinliang Lu

IPC: H01L21/30 ,  C23C16/452 ,  H01L21/3213 ,  H01L21/311 ,  H01L21/302

Abstract: Surface treatment processes for treating a workpiece with organic radicals are provided. In one example implementation, a method for processing a workpiece having a semiconductor material and a carbon containing layer (e.g., photoresist) can include a surface treatment process on the workpiece. The surface treatment process can include generating one or more species in a first chamber (e.g., a plasma chamber). The surface treatment process can include mixing one or more hydrocarbon radicals with the species to create a mixture. The surface treatment process can include exposing the carbon containing layer to the mixture in a second chamber (e.g., a processing chamber).

公开(公告)号：US20190103279A1

公开(公告)日：2019-04-04

申请号：US15958560

申请日：2018-04-20

Applicant: Mattson Technology, Inc.

Inventor： Michael X. Yang ,  Hua Chung ,  Xinliang Lu

IPC: H01L21/30 ,  H01L21/02 ,  H01L21/311 ,  H01L21/302 ,  C23C16/452

CPC classification number: H01L21/3003 ,  B01D67/009 ,  C23C16/452 ,  C23F1/12 ,  H01J37/321 ,  H01J37/32743 ,  H01J37/32899 ,  H01J2237/006 ,  H01J2237/332 ,  H01L21/02118 ,  H01L21/02252 ,  H01L21/02321 ,  H01L21/0234 ,  H01L21/0271 ,  H01L21/302 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/76826

Abstract: Processes for surface treatment of a workpiece are provided. In one example implementation, a method can include performing an organic radical based surface treatment process on a workpiece. The organic radical based surface treatment process can include generating one or more species in a first chamber. The surface treatment process can include mixing one or more hydrocarbon molecules with the species to create a mixture. The mixture can include one or more organic radicals. The surface treatment process can include exposing a semiconductor material on the workpiece to the mixture in a second chamber.