Data logging apparatus with memory and pattern testing device
    52.
    发明授权
    Data logging apparatus with memory and pattern testing device 失效
    具有记忆和图案测试装置的数据记录仪

    公开(公告)号:US5305331A

    公开(公告)日:1994-04-19

    申请号:US684411

    申请日:1991-04-12

    CPC分类号: G01R31/31935

    摘要: A data logging apparatus for a device function tester comprises a first shift circuit (1) supplied with an output signal of the tester and a strobe signal for shifting the output of the tester by n rates under the timing of a basic clock (T.sub.0), a second shift circuit (2) for shifting the timing of the basic clock (T.sub.0) by n rates, a write pulse generating circuit (3) supplied with the output signal of the shift circuit (2), a third shift circuit (4) supplied with a memory address signal for shifting it by n rates under the timing of the basic clock (T.sub.0), a fourth shift circuit (5) for shifting a pattern address signal by n rates under the timing of the basic clock (T.sub.0), a first memory (6) supplied with the output signal of the first shift circuit (1) and the output signal of the third shift circuit (1) for storing the result of the test shifted by n rates in response to a write command signal, and a second memory ( 7) supplied with the output of the fourth shift circuit (5) and the output of the third shift circuit (4) for storing the pattern address shifted by n rates in response to the write command signal. Data logging can be accomplished without being affected by variable time intervals of write enable strobe pulses.

    摘要翻译: 一种用于设备功能测试器的数据记录装置,包括:提供有测试仪的输出信号的第一移位电路(1)和用于在基本时钟(T0)的定时下将测试仪的输出移位n个速率的选通信号, 用于将基本时钟(T0)的定时移位n个速率的第二移位电路(2),提供有移位电路(2)的输出信号的写脉冲发生电路(3),第三移位电路(4) 提供存储器地址信号,用于在基本时钟(T0)的定时下移位n个速率;第四移位电路(5),用于在基本时钟(T0)的定时下将模式地址信号移位n个速率, 提供有第一移位电路(1)的输出信号的第一存储器(6)和第三移位电路(1)的输出信号,用于存储响应写入命令信号移位n个速率的测试结果, 以及提供有第四移位电路(5)的输出和外部输出的第二存储器(7) t用于响应写入命令信号存储以n个速率移位的模式地址。 可以在不受写使能选通脉冲的可变时间间隔的影响的情况下实现数据记录。

    Image forming apparatus for forming electrostatic latent image using
ions as medium, with high-speed driving means
    53.
    发明授权
    Image forming apparatus for forming electrostatic latent image using ions as medium, with high-speed driving means 失效
    使用离子作为介质形成静电潜像的图像形成装置,具有高速驱动装置

    公开(公告)号:US5270742A

    公开(公告)日:1993-12-14

    申请号:US710131

    申请日:1991-06-04

    IPC分类号: B41J2/415 G03G15/32 G01D15/06

    CPC分类号: G03G15/323 B41J2/415

    摘要: In an image forming apparatus for forming a static latent image using ions as a medium, an ion generation formed by stacking a plurality of line electrodes, a plurality of finger electrodes, and a screen electrode with dielectric layers being sandwiched therebetween is arranged to oppose a dielectric drum on which the electrostatic latent image is to be formed. A static induction transistor for switching an RF high-voltage signal at a high speed is connected to each line electrode of the ion generator. Each static induction transistor is also connected to a DC high-voltage power source via a coil. When each static induction transistor is driven at a high frequency by a source drive circuit, an RF high voltage is applied to a corresponding line electrode. A voltage is supplied to a parallel resonator constituted by the coil and a line electrode capacitance to start resonance, thereby obtaining an output for ion generation.

    摘要翻译: 在使用离子作为介质形成静电潜像的图像形成装置中,通过层叠多个线电极,多个指状电极和具有介电层的屏蔽电极而形成的离子产生被配置成与 要在其上形成静电潜像的介质鼓。 用于将RF高电压信号高速切换的静电感应晶体管连接到离子发生器的每个线电极。 每个静态感应晶体管也通过线圈连接到直流高压电源。 当每个静态感应晶体管由源极驱动电路以高频率驱动时,RF高电压被施加到相应的线电极。 向由线圈和线电极电容器构成的并联谐振器提供电压以开始谐振,从而获得用于离子产生的输出。

    Non-linear optical device with quantum micro hetero structure
    56.
    发明授权
    Non-linear optical device with quantum micro hetero structure 失效
    具有量子微结构的非线性光学器件

    公开(公告)号:US5059001A

    公开(公告)日:1991-10-22

    申请号:US618585

    申请日:1990-11-28

    申请人: Akira Shimizu

    发明人: Akira Shimizu

    摘要: An non-linear optical device for generating light of an angular frequency 2.omega. from incident light of an angular frequency .omega. by means of a non-linear optical effect, comprises a substrate body, formed by a semiconductive or insulating material;an embedded member embedded in the substrate body and formed by a direct-transition type semiconductive or insulating material different from the material constituting the substrate body, having a band gap Eg satisfying a relation Eg.apprxeq.2n.omega. in which n=h/2.pi. and h is Planck constant, and having a size comparable to that of an exciton, and in this device, an asymmetric potential is provided to each of an electron and positive hole in said embedded member in such a manner that the wave functions of the electron and positive hole have mutually different centers of gravity fron each other.