Abstract:
Erasing wordlines at the same time can cause undesirable results because some wordlines are affected by electromagnetic waves of other wordlines. However, other wordlines are not affected because they are next to contacts. Therefore, it can be beneficial to erase wordlines in a multi-phase sequence that allows for erasing wordlines without an impact from other wordlines.
Abstract:
The invention provides methods and compositions tor treating and preventing a skin rash secondary to anti-epidermal growth factor receptor (BGKR) therapy, where the method comprises applying a vitamin K analog or a phosphatase inhibitor to the skin.
Abstract:
Methods of erasing flash memory cells are provided that improve erase cycling speed and reliability. One embodiment comprises interactively applying a stepped or ramped drain voltage pattern to a drain of the memory cells and a pulsed gate voltage pattern to a gate of the memory cells for a predetermined number of gate pulses or until all the memory cells are erased. In another embodiment, an erase bias circuit is provided for erasing a sector of flash memory cells, the circuit comprising row and column decoders that selects wordline rows and columns of cells, respectively, a supply bias arrangement that provides source and drain supply voltages for the sector, and a patterned pulse bias arrangement configured to provide a pulsed gate voltage pattern to gates of the cells selected by the row decoder and a drain voltage pattern to the drains of the cells selected by the column decoder.
Abstract:
A data transferring system and an object tracking system. The data transferring method includes generating messages based on the data, connecting the clients to the server, generating a plurality of event trigger thread instances, each of the instances being in communication with a corresponding one of the clients and sending the messages from the server to the clients through remote events by using the corresponding event trigger thread instance to control the communication between the server and the client.
Abstract:
A method of erasing a block of flash memory cells by applying a ramped gate erase voltage to the block of memory cells. When an erase verify of the block of memory cells indicates that erasure has not been successfully completed another erase voltage with a greater absolute value than the initial erase voltage can be applied to the block of memory cells until erasure is complete.
Abstract:
A heat dissipator for mounting on a heat-generating element includes a heat-dissipating body, a fan assembly, a bottom stand and a top stand. The heat-dissipating body is formed into a spherical body and constituted of a plurality of heat-dissipating pieces. The heat-dissipating body is provided with a sealed accommodating space therein for accommodating the fan assembly. Further, the bottom stand and the top stand are provided at the upper and lower ends of the heat-dissipating body, respectively. Further, the bottom of the fan assembly has a connecting seat for connecting to the bottom stand to fix the fan assembly. Finally, the bottom stand is provided with a heat-conducting block for adhering to the heat-generating element, thereby to conduct the heat generated by the operation of the heat-generating element to the heat-dissipating body. In this way, the heat can be uniformly dissipated to each heat-dissipating piece. With the airflow generated by the fan assembly, the heat-dissipating effect can be satisfactorily achieved.
Abstract:
A device includes a memory device and an NPN or PNP diode coupled to a word-line of the memory device. The NPN or PNP diode reduces device damage and performance impairment that may result from device charging by drawing charges away from the memory device.
Abstract:
A method of programming a memory cell in a non-volatile memory device includes applying a first voltage to a control gate associated with the memory cell and applying a second voltage to a drain region associated with the memory cell. The method also includes applying a positive bias to a source region associated with the memory cell and/or applying a negative bias to a substrate region associated with the memory cell.
Abstract:
A method of detecting a charge stored on a charge storage region of a first dual bit dielectric memory cell within an array of dual bit dielectric memory cells comprises applying a source voltage to a first bit line that is the source of the selected memory cell and applying a drain voltage to a second bit line that forms a drain junction with the channel region. The source voltage may be a small positive voltage and the drain voltage may be greater than the source voltage. A read voltage is applied to a selected one of the word lines that forms a gate over the charge storage region and a bias voltage is applied to non-selected word lines in the array. The bias voltage may be a negative voltage.