Rotary structure
    53.
    发明授权
    Rotary structure 失效
    旋转结构

    公开(公告)号:US4883370A

    公开(公告)日:1989-11-28

    申请号:US7336

    申请日:1987-01-27

    Abstract: A rotary structure adapted to be used as a spindle unit for a miniature motor or miniature rotor or as a tape guide roller for a VTR. In the structure of the rotary mechanism, instead of a conventional expensive radial ball bearing, a groove of a semicircular cross-section is formed in a shaft itself so as to hold balls between this groove and the ball receiving concave surface of an outer race provided around the groove.

    Abstract translation: 一种旋转结构,适于用作微型电动机或微型转子的主轴单元或用于VTR的带导向辊。 在旋转机构的结构中,代替常规的昂贵的径向球轴承,在轴本身上形成半圆形横截面的槽,以便将球保持在该槽和设置的外圈的球接收凹面之间 在沟槽周围。

    Photoelectric conversion element
    54.
    发明授权
    Photoelectric conversion element 有权
    光电转换元件

    公开(公告)号:US08993869B2

    公开(公告)日:2015-03-31

    申请号:US13422728

    申请日:2012-03-16

    CPC classification number: H01L31/022425 H01L31/02168 H01L31/0288 Y02E10/50

    Abstract: A photoelectric conversion element includes a photoelectric conversion layer to include a first metal layer, a semiconductor layer, and a second metal layer, all of which are laminated. In addition, at least one of the first metal layer and the second metal layer is a nano-mesh metal having a plurality of through holes or a dot metal having a plurality of metal dots arranged separately from each other on the semiconductor layer. The photoelectric conversion layer includes a long-wavelength absorption layer containing an impurity which is different from impurities for p-type doping and n-type doping of the semiconductor layer. The long-wavelength absorption layer is within a depth of 5 nm from the nano-mesh metal or the dot metal.

    Abstract translation: 光电转换元件包括光电转换层,其包括第一金属层,半导体层和第二金属层,所有这些都被层压。 此外,第一金属层和第二金属层中的至少一个是具有多个通孔的纳米网状金属或具有在半导体层上彼此分开设置的多个金属点的点状金属。 光电转换层包括含有杂质的长波长吸收层,该杂质与p型掺杂和半导体层的n型掺杂不同。 长波长吸收层距离纳米网状金属或点状金属为5nm以下。

    Light-extraction layer of light-emitting device and organic electroluminescence element employing the same
    55.
    发明授权
    Light-extraction layer of light-emitting device and organic electroluminescence element employing the same 有权
    发光装置的光提取层和使用该发光装置的有机电致发光元件

    公开(公告)号:US08355204B2

    公开(公告)日:2013-01-15

    申请号:US12346937

    申请日:2008-12-31

    CPC classification number: H01L51/5262 H01L51/5271 H01L2251/5315

    Abstract: The present invention provides a highly efficient light-extraction layer and an organic electroluminescence element excellent in light-extraction efficiency. The light-extraction layer of the present invention comprises a reflecting layer and a three-dimensional diffraction layer formed thereon. The diffraction layer comprises fine particles having a variation coefficient of the particle diameter of 10% or less and of a matrix having a refractive index different from that of the fine particles. The particles have a volume fraction of 50% or more based on the volume of the diffraction layer. The particles are arranged to form first areas having short-distance periodicity, and the first areas are disposed and adjacent to each other in random directions to form second areas. The organic electroluminescence element of the present invention comprises the above light-extraction layer.

    Abstract translation: 本发明提供了光提取效率优异的高效率的光提取层和有机电致发光元件。 本发明的光提取层包括反射层和在其上形成的三维衍射层。 衍射层包括具有10%以下的粒径变化系数的微粒和具有与微粒的折射率不同的折射率的基质。 基于衍射层的体积,粒子的体积分数为50%以上。 颗粒被布置成形成具有短距离周期的第一区域,并且第一区域在随机方向上彼此设置和相邻,以形成第二区域。 本发明的有机电致发光元件包含上述光提取层。

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
    57.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
    半导体发光器件及其制造方法

    公开(公告)号:US20120228654A1

    公开(公告)日:2012-09-13

    申请号:US13221326

    申请日:2011-08-30

    Abstract: According to one embodiment, a semiconductor light emitting device includes a structure including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The device also includes an electrode layer provided on the second semiconductor layer side of the structure. The electrode layer includes a metal portion with a thickness of not less than 10 nanometers and not more than 100 nanometers. A plurality of openings pierces the metal portion, each of the openings having an equivalent circle diameter of not less than 10 nanometers and not more than 5 micrometers. The device includes an inorganic film providing on the metal portion and inner surfaces of the openings, the inorganic film having transmittivity with respect to light emitted from the light emitting layer.

    Abstract translation: 根据一个实施例,半导体发光器件包括包括第一导电类型的第一半导体层,第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层的结构。 该器件还包括设置在该结构的第二半导体层侧上的电极层。 电极层包括厚度不小于10纳米且不大于100纳米的金属部分。 多个开口刺穿金属部分,每个开口具有不小于10纳米且不大于5微米的等效圆直径。 所述装置包括在所述金属部分和所述开口的内表面上提供的无机膜,所述无机膜相对于从所述发光层发射的光具有透射率。

    PHYSICAL QUANTITY SENSOR
    58.
    发明申请
    PHYSICAL QUANTITY SENSOR 审中-公开
    物理量传感器

    公开(公告)号:US20120000288A1

    公开(公告)日:2012-01-05

    申请号:US13254298

    申请日:2010-03-08

    CPC classification number: G01L1/183

    Abstract: A physical quantity sensor includes a deformable body in which strain occurs in response to a stress applied thereto, a vibrator vibrating with a frequency according to the strain or with an amplitude according to the strain, and a processor processing a signal output from the vibrator. The vibrator is mounted to the deformable body such that the strain transmits to the vibrator. The processor is bonded to the deformable body such that the strain does not substantially transmit to the processor. This physical quantity sensor can stably detects strain and tension acting on an object.

    Abstract translation: 物理量传感器包括响应于施加的应力而发生应变的变形体,根据应变的频率或根据应变的幅度振动的振动器,以及处理从振动器输出的信号的处理器。 振动器安装到变形体上,使得应变传递到振动器。 处理器被结合到可变形体,使得该应变基本上不传送到处理器。 该物理量传感器可以稳定地检测作用在物体上的应变和张力。

    Organic electroluminescent device having a diffraction grating for enhancing light extraction efficiency
    59.
    发明授权
    Organic electroluminescent device having a diffraction grating for enhancing light extraction efficiency 有权
    具有用于提高光提取效率的衍射光栅的有机电致发光器件

    公开(公告)号:US07786665B2

    公开(公告)日:2010-08-31

    申请号:US11319508

    申请日:2005-12-29

    CPC classification number: H01L51/5275

    Abstract: An organic electroluminescent device is provided, which includes an emission portion comprising a first electrode and a second electrode and an organic layer sandwiched between the first and second electrodes, and a diffraction grating disposed neighboring on the emission portion, the diffraction grating having first regions and a second region, the first regions comprising a plurality of pair of recessed and projected portions, the plurality of pair of recessed and projected portions being periodically arranged and provided with a primitive translation vector of a direction, the second region comprising an aggregate of the first regions and located parallel with an emission surface of the organic electroluminescent device.

    Abstract translation: 提供一种有机电致发光器件,其包括发射部分,其包括第一电极和第二电极以及夹在第一和第二电极之间的有机层,以及围绕发射部分设置的衍射光栅,衍射光栅具有第一区域和 第二区域,所述第一区域包括多个凹入和突出部分,所述多个凹入和突出部分周期性地布置并且设置有方向的原始平移向量,所述第二区域包括所述第一区域的聚集体 区域并且与有机电致发光器件的发射表面平行。

    ANTIREFLECTION STRUCTURE FORMATION METHOD AND ANTIREFLECTION STRUCTURE
    60.
    发明申请
    ANTIREFLECTION STRUCTURE FORMATION METHOD AND ANTIREFLECTION STRUCTURE 有权
    抗逆结构形成方法与抗逆结构

    公开(公告)号:US20090176015A1

    公开(公告)日:2009-07-09

    申请号:US12347187

    申请日:2008-12-31

    Abstract: The present invention provides such a formation method that an antireflection structure having excellent antireflection functions can be formed in a large area and at small cost. Further, the present invention also provides an antireflection structure formed by that method. In the formation method, a base layer and particles placed thereon are subjected to an etching process. The particles on the base layer serve as an etching mask in the process, and hence they are more durable against etching than the base layer. The etching rate ratio of the base layer to the particles is more than 1 but not more than 5. The etching process is stopped before the particles disappear. It is also possible to produce an antireflection structure by nanoimprinting method employing a stamper. The stamper is formed by use of a master plate produced according to the above formation method.

    Abstract translation: 本发明提供这样一种形成方法,即可以大面积且成本低的方式形成具有优异的抗反射功能的抗反射结构。 此外,本发明还提供了通过该方法形成的抗反射结构。 在形成方法中,对基底层和放置在其上的颗粒进行蚀刻处理。 基层上的颗粒在该过程中用作蚀刻掩模,因此它们比基层更耐腐蚀。 基层与颗粒的蚀刻速率比大于1但不大于5.蚀刻过程在颗粒消失之前停止。 也可以通过使用压模的纳米压印方法制造抗反射结构。 通过使用根据上述形成方法制造的母版形成压模。

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