公开(公告)号：US20110076817A1

公开(公告)日：2011-03-31

申请号：US12961996

申请日：2010-12-07

申请人： Uli Hiller ,  Oliver Blank ,  Ralf Siemieniec ,  Maximilian Roesch

发明人： Uli Hiller ,  Oliver Blank ,  Ralf Siemieniec ,  Maximilian Roesch

IPC分类号： H01L21/336

CPC分类号： H01L29/7813 ,  H01L21/2815 ,  H01L29/0615 ,  H01L29/0638 ,  H01L29/0696 ,  H01L29/402 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/66734 ,  H01L29/7811

摘要： An integrated circuit device with a semiconductor body and a method for the production of a semiconductor device a provided. The semiconductor body comprises a cell field with a drift zone of a first conduction type. In addition, the semiconductor device comprises an edge region surrounding the cell field. Field plates with a trench gate structure are arranged in the cell field, and an edge trench surrounding the cell field is provided in the edge region. The front side of the semiconductor body is in the edge region provided with an edge zone of a conduction type complementing the first conduction type with doping materials of body zones of the cell field. The edge zone of the complementary conduction type extends both within and outside the edge trench.

摘要翻译： 提供了具有半导体本体的集成电路器件和用于制造半导体器件的方法。 半导体体包括具有第一导电类型的漂移区的电池区。 此外，半导体器件包括围绕电池区的边缘区域。 具有沟槽栅极结构的场板被布置在电池区中，并且在边缘区域中设置围绕电池区的边缘沟槽。 半导体本体的前侧处于边缘区域，该边缘区域具有与单元区域的体区的掺杂材料互补的第一导电类型的导电类型的边缘区域。 互补导电类型的边缘区域在边缘沟槽内部和外部均延伸。

公开(公告)号：US07880226B2

公开(公告)日：2011-02-01

申请号：US12020077

申请日：2008-01-25

申请人： Uli Hiller ,  Oliver Blank ,  Ralf Siemieniec ,  Maximilian Roesch

发明人： Uli Hiller ,  Oliver Blank ,  Ralf Siemieniec ,  Maximilian Roesch

IPC分类号： H01L29/72

CPC分类号： H01L29/7813 ,  H01L21/2815 ,  H01L29/0615 ,  H01L29/0638 ,  H01L29/0696 ,  H01L29/402 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/66734 ,  H01L29/7811

摘要： An integrated circuit device with a semiconductor body and a method for the production of a semiconductor device a provided. The semiconductor body comprises a cell field with a drift zone of a first conduction type. In addition, the semiconductor device comprises an edge region surrounding the cell field. Field plates with a trench gate structure are arranged in the cell field, and an edge trench surrounding the cell field is provided in the edge region. The front side of the semiconductor body is in the edge region provided with an edge zone of a conduction type complementing the first conduction type with doping materials of body zones of the cell field. The edge zone of the complementary conduction type extends both within and outside the edge trench.

摘要翻译： 提供了具有半导体本体的集成电路器件和用于制造半导体器件的方法。 半导体体包括具有第一导电类型的漂移区的电池区。 此外，半导体器件包括围绕电池区的边缘区域。 具有沟槽栅极结构的场板被布置在电池区中，并且在边缘区域中设置围绕电池区的边缘沟槽。 半导体本体的前侧处于边缘区域，该边缘区域具有与单元区域的体区的掺杂材料互补的第一导电类型的导电类型的边缘区域。 互补导电类型的边缘区域在边缘沟槽内部和外部均延伸。

公开(公告)号：US07750397B2

公开(公告)日：2010-07-06

申请号：US12105810

申请日：2008-04-18

申请人： Franz Hirler ,  Ralf Siemieniec ,  Ilja Pawel

发明人： Franz Hirler ,  Ralf Siemieniec ,  Ilja Pawel

IPC分类号： H01L23/62

CPC分类号： H01L29/7802 ,  H01L29/04 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/32 ,  H01L29/407 ,  H01L29/41 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/7808 ,  H01L29/7813 ,  H01L29/7816 ,  H01L29/861 ,  H01L29/872 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor component including compensation zones and discharge structures for the compensation zones. One embodiment provides a drift zone of a first conduction type, at least one compensation zone of a second conduction type, complementary to the first conduction type, the at least one compensation zone being arranged in the drift zone, at least one discharge structure which is arranged between the at least one compensation zone and a section of the drift zone that surrounds the compensation zone or in the compensation zone and designed to enable a charge carrier exchange between the compensation zone and the drift zone if a potential difference between an electrical potential of the compensation zone and an electrical potential of the section of the drift zone that surrounds the compensation zone is greater than a threshold value predetermined by the construction and/or the positioning of the discharge structure.

摘要翻译： 包括补偿区域和补偿区域的放电结构的半导体元件。 一个实施例提供了第一导电类型的漂移区域，与第一导电类型互补的第二导电类型的至少一个补偿区域，所述至少一个补偿区域布置在漂移区域中，至少一个排放结构是 布置在所述至少一个补偿区域和所述漂移区域的围绕所述补偿区域或所述补偿区域的部分之间，并且被设计成使得能够在所述补偿区域和所述漂移区域之间进行电荷载流子交换，如果所述补偿区域的电势 补偿区域和围绕补偿区域的漂移区段的电位大于通过排放结构的结构和/或定位预定的阈值。

公开(公告)号：US07615847B2

公开(公告)日：2009-11-10

申请号：US11690494

申请日：2007-03-23

申请人： Markus Zundel ,  Franz Hirler ,  Ralf Siemieniec

发明人： Markus Zundel ,  Franz Hirler ,  Ralf Siemieniec

IPC分类号： H01L29/861

CPC分类号： H01L29/7802 ,  H01L29/0878 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/66734 ,  H01L29/7809 ,  H01L29/7813

摘要： A semiconductor component having a semiconductor body having first and second semiconductor regions of a first conduction type, and a third semiconductor region of a second conduction type, which is complementary to the first conduction type. The second semiconductor region is arranged between the first and third semiconductor region and together with the first semiconductor region forms a first junction region and together with the third semiconductor region forms a second junction region. In the second semiconductor region the dopant concentration is lower than the dopant concentration in the first semiconductor region. The dopant concentration in the second semiconductor region along a straight connecting line between the first and third semiconductor regions is inhomogeneous and has at least one minimum between the first and second junction regions, wherein the minimum is at a distance from the first and second junction regions.

摘要翻译： 一种半导体元件，具有半导体本体，该半导体本体具有第一导电类型的第一和第二半导体区域以及与第一导电类型互补的第二导电类型的第三半导体区域。 第二半导体区域布置在第一和第三半导体区域之间并与第一半导体区域一起形成第一结区域，并与第三半导体区域一起形成第二结区域。 在第二半导体区域中，掺杂剂浓度低于第一半导体区域中的掺杂剂浓度。 沿着第一和第三半导体区域之间的直连接线的第二半导体区域中的掺杂剂浓度是不均匀的，并且在第一和第二结区域之间具有至少一个最小值，其中最小值距离第一和第二接合区域 。

公开(公告)号：US20080230833A1

公开(公告)日：2008-09-25

申请号：US11690494

申请日：2007-03-23

申请人： Markus Zundel ,  Franz Hirler ,  Ralf Siemieniec

发明人： Markus Zundel ,  Franz Hirler ,  Ralf Siemieniec

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7802 ,  H01L29/0878 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/66734 ,  H01L29/7809 ,  H01L29/7813

摘要： A semiconductor component having a semiconductor body having first and second semiconductor regions of a first conduction type, and a third semiconductor region of a second conduction type, which is complementary to the first conduction type. The second semiconductor region is arranged between the first and third semiconductor region and together with the first semiconductor region forms a first junction region and together with the third semiconductor region forms a second junction region. In the second semiconductor region the dopant concentration is lower than the dopant concentration in the first semiconductor region. The dopant concentration in the second semiconductor region along a straight connecting line between the first and third semiconductor regions is inhomogeneous and has at least one minimum between the first and second junction regions, wherein the minimum is at a distance from the first and second junction regions.

摘要翻译： 一种半导体元件，具有半导体本体，该半导体本体具有第一导电类型的第一和第二半导体区域以及与第一导电类型互补的第二导电类型的第三半导体区域。 第二半导体区域布置在第一和第三半导体区域之间并与第一半导体区域一起形成第一结区域，并与第三半导体区域一起形成第二结区域。 在第二半导体区域中，掺杂剂浓度低于第一半导体区域中的掺杂剂浓度。 沿着第一和第三半导体区域之间的直连接线的第二半导体区域中的掺杂剂浓度是不均匀的，并且在第一和第二结区域之间具有至少一个最小值，其中最小值距离第一和第二接合区域 。

公开(公告)号：US20080042172A1

公开(公告)日：2008-02-21

申请号：US11833328

申请日：2007-08-03

申请人： Franz Hirler ,  Ralf Siemieniec ,  Christian Geissler

发明人： Franz Hirler ,  Ralf Siemieniec ,  Christian Geissler

IPC分类号： H01L29/76 ,  H01L29/06

CPC分类号： H01L29/7811 ,  H01L29/0615 ,  H01L29/0623 ,  H01L29/0653 ,  H01L29/0661 ,  H01L29/404 ,  H01L29/407 ,  H01L29/42376 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7813 ,  H01L29/861 ,  H01L29/872 ,  H01L2924/0002 ,  H01L2924/00

摘要： A Semiconductor component having a space saving edge structure is disclosed. One embodiment provides a first side, a second side, an inner region, an edge region adjoining the inner region in a lateral direction of the semiconductor body, and a first semiconductor layer extending across the inner region and the edge region and having a basic doping of a first conductivity type. At least one active component zone of a second conductivity type, which is complementary to the first conductivity type, is disposed in the inner region in the first semiconductor layer. An edge structure is disposed in the edge region and includes at least one trench extending from the first side into the semiconductor body. An edge electrode is disposed in the trench, a dielectric layer is disposed in the trench between the edge electrode and the semiconductor body, a first edge zone of the second conductivity type adjoin the trench and are at least partially disposed below the trench.

摘要翻译： 公开了具有节省空间的边缘结构的半导体部件。 一个实施例提供了第一侧面，第二侧面，内部区域，与半导体主体的横向方向上的内部区域相邻的边缘区域以及跨越内部区域和边缘区域延伸并具有基本掺杂的第一半导体层 的第一导电类型。 与第一导电类型互补的至少一个第二导电类型的活性组分区域设置在第一半导体层的内部区域中。 边缘结构设置在边缘区域中并且包括从第一侧延伸到半导体本体中的至少一个沟槽。 边缘电极设置在沟槽中，电介质层设置在边缘电极和半导体本体之间的沟槽中，第二导电类型的第一边缘区域与沟槽相邻并且至少部分地设置在沟槽下方。