公开(公告)号：US20060169584A1

公开(公告)日：2006-08-03

申请号：US11222245

申请日：2005-09-07

Applicant: Karl Brown ,  John Pipitone ,  Vineet Mehta

Inventor： Karl Brown ,  John Pipitone ,  Vineet Mehta

IPC: C23C14/00

CPC classification number: H01J37/3408 ,  C23C14/046 ,  C23C14/345 ,  C23C14/358 ,  H01J37/32082 ,  H01J37/32706 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76844

Abstract: A physical vapor deposition reactor includes a vacuum chamber including a sidewall, a ceiling and a wafer support pedestal near a floor of the chamber, a vacuum pump coupled to the chamber, a process gas inlet coupled to the chamber and a process gas source coupled to the process gas inlet. A metal sputter target is located at the ceiling and a high voltage D.C. source coupled to the sputter target. An RF plasma source power generator is coupled to the metal sputter target and has a frequency suitable for exciting kinetic electrons. Preferably, the wafer support pedestal comprises an electrostatic chuck and an RF plasma bias power generator is coupled to the wafer support pedestal having a frequency suitable for coupling energy to plasma ions. Preferably, a solid metal RF feed rod having a diameter in excess of about 0.5 inches engages the metal sputter target, the RF feed rod extending axially above the target through the ceiling and being coupled to the RF plasma source power generator.

Abstract translation: 物理气相沉积反应器包括真空室，其包括侧壁，天花板和靠近室底部的晶片支撑台座，耦合到该室的真空泵，耦合到该室的工艺气体入口以及耦合到 工艺气体入口。 金属溅射靶位于天花板和耦合到溅射靶的高电压源极。 RF等离子体源功率发生器耦合到金属溅射靶并且具有适于激发动电子的频率。 优选地，晶片支撑基座包括静电卡盘，并且RF等离子体偏置功率发生器耦合到具有适于将能量耦合到等离子体离子的频率的晶片支撑基座。 优选地，具有超过约0.5英寸的直径的固体金属RF馈送棒与金属溅射靶接合，RF馈送杆通过天花板轴向延伸到目标上方并且耦合到RF等离子体源发电机。

公开(公告)号：US06214413B1

公开(公告)日：2001-04-10

申请号：US09231323

申请日：1999-01-13

Applicant: Karl Brown

Inventor： Karl Brown

IPC: B05D132

CPC classification number: C23C14/50 ,  C23C14/042

Abstract: A method and apparatus for fabricating a wafer spacing mask on a substrate support chuck. Such apparatus is a stencil containing a plurality of apertures and at least one high aspect ratio opening that is positioned atop the substrate support chuck while material is deposited onto the stencil and through the apertures and high aspect ratio openings onto the chuck. Upon completion of the deposition process, the stencil is removed from the workpiece support chuck leaving deposits of the material of various widths but the same heights to form the wafer spacing mask.

Abstract translation: 一种用于在基板支撑卡盘上制造晶片间隔掩模的方法和装置。 这种设备是含有多个孔和至少一个高纵横比开口的模板，该开孔定位在基板支撑卡盘顶部，同时材料沉积在模板上并通过孔和高纵横比开口到卡盘上。 在沉积工艺完成后，将模板从工件支撑卡盘上移除，留下各种宽度但相同高度的材料沉积物以形成晶片间隔掩模。