公开(公告)号：US11430925B2

公开(公告)日：2022-08-30

申请号：US17060772

申请日：2020-10-01

申请人： EPISTAR CORPORATION

发明人： Min-Hsun Hsieh ,  Tsung-Hong Lu

IPC分类号： H01L33/50 ,  H01L33/60 ,  H01L33/62

摘要： A light-emitting device includes a light-emitting unit comprising a top surface and a first side surface; a light-transmitting layer covers the top surface and the first side surface; a wavelength conversion structure disposed on the light-transmitting layer; a protective layer covering the second side surface and the light-transmitting layer; and a reflective layer surrounding the protective layer. The wavelength conversion structure includes a wavelength conversion layer, a first barrier layer disposed on the wavelength conversion layer, a second barrier layer disposed under the wavelength conversion layer, the wavelength conversion layer, the first barrier layer, and the second barrier layer are collectively formed a second side surface.

公开(公告)号：US11430916B2

公开(公告)日：2022-08-30

申请号：US17087310

申请日：2020-11-02

申请人： EPISTAR CORPORATION

发明人： Chien-Hua Chou ,  Tai-Chun Wang ,  Chih-Tsung Su ,  Biau-Dar Chen

IPC分类号： H01L33/00 ,  H01L33/38 ,  H01L33/14

摘要： A light-emitting device comprises a semiconductor layer; a pad electrode comprising a periphery disposed on the semiconductor layer; a finger electrode connected to the pad electrode, wherein the finger electrode comprises a first portion extended from the periphery of the pad electrode and a second portion connected to the first portion; and a plurality of first current blocking regions formed on the semiconductor layer, separated from the pad electrode and formed under the finger electrode, wherein one of the plurality of first current blocking regions is most close to the pad electrode and is separated from the pad electrode by a first distance, adjacent two of others of the plurality of first current blocking regions are separated from each other by a second distance, and the first distance is longer than the second distance.

公开(公告)号：US11423830B2

公开(公告)日：2022-08-23

申请号：US17233777

申请日：2021-04-19

申请人： EPISTAR CORPORATION

发明人： Min-Hsun Hsieh

IPC分类号： H01L21/00 ,  G09G3/32 ,  H01L21/02 ,  H01L33/38

摘要： A display includes a substrate with a plurality of electronic control elements, an array of light-emitting diodes having a semiconductor layer, a plurality of light emitting units disposed on the semiconductor layer, and a plurality of first electrodes disposed on the semiconductor layer, an bonding layer disposed between the substrate and the array of light-emitting diodes, and a plurality of wavelength conversion elements disposed on the semiconductor layer and spaced apart from each other. The plurality of wavelength conversion elements and the plurality of light emitting units are disposed at different sides of the semiconductor layer. The plurality of wavelength conversion elements is arranged in positions corresponding to the plurality of light-emitting units.

公开(公告)号：US20220262849A1

公开(公告)日：2022-08-18

申请号：US17733262

申请日：2022-04-29

申请人： EPISTAR CORPORATION

发明人： Chao Hsing CHEN ,  Jia Kuen WANG ,  Chien Fu SHEN ,  Chun Teng KO

IPC分类号： H01L27/15 ,  H01L33/64 ,  H01L33/50 ,  H01L33/60 ,  H01L33/48 ,  H01L33/62 ,  H01L25/075

摘要： An optoelectronic device comprises an epitaxial stack, comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a trench exposing a portion of the first semiconductor layer; a first insulating layer formed on a side wall of the trench to electrically insulate from the active layer and the second semiconductor layer; a first electrode formed on the trench; a second electrode formed on the second semiconductor layer; a supporting device covering the epitaxial stack; an optical layer covering the first electrode and the second electrode, comprising a plurality of openings corresponding to positions of the first electrodes and the second electrodes; a fifth electrode electrically connected with the first electrode; and a sixth electrode electrically connected with the second electrode, wherein the fifth electrode and the sixth electrode each comprises a side comprising a length longer that of an edge of the epitaxial stack.

公开(公告)号：US11362060B2

公开(公告)日：2022-06-14

申请号：US16551764

申请日：2019-08-27

申请人： EPISTAR CORPORATION

发明人： Min-Hsun Hsieh ,  Shih-An Liao ,  Ying-Yang Su ,  Hsin-Mao Liu ,  Tzu-Hsiang Wang ,  Chi-Chih Pu

IPC分类号： H01L23/00 ,  H01L25/16 ,  H01L25/075 ,  H01L23/498 ,  B23K26/22 ,  B23K101/40

摘要： Disclosed is a die-bonding method which provides a target substrate having a circuit structure with multiple electrical contacts and multiple semiconductor elements each semiconductor element having a pair of electrodes, arranges the multiple semiconductor elements on the target substrate with the pair of electrodes of each semiconductor element aligned with two corresponding electrical contacts of the target substrate, and applies at least one energy beam to join and electrically connect the at least one pair of electrodes of every at least one of the multiple semiconductor elements and the corresponding electrical contacts aligned therewith in a heating cycle by heat carried by the at least one energy beam in the heating cycle. The die-bonding method delivers scattering heated dots over the target substrate to avoid warpage of PCB and ensures high bonding strength between the semiconductor elements and the circuit structure of the target substrate.

公开(公告)号：US20220178527A1

公开(公告)日：2022-06-09

申请号：US17651891

申请日：2022-02-21

申请人： EPISTAR CORPORATION

发明人： CHI-CHIH PU ,  CHEN-HONG LEE ,  SHIH-YU YEH ,  WEI-KANG CHENG ,  SHYI-MING PAN ,  SIANG-FU HONG ,  CHIH-SHU HUANG ,  TZU-HSIANG WANG ,  SHIH-CHIEH TANG ,  CHENG-KUANG YANG

IPC分类号： F21V21/14 ,  H01L33/50 ,  H01L33/48 ,  H01L33/44 ,  F21K9/232 ,  F21V21/00 ,  H01L25/075 ,  F21V29/85 ,  F21V3/02 ,  F21V17/10 ,  F21V23/06

摘要： A light emitting apparatus, including: a first light emitting device with a first substrate having a first upper surface and first bottom surface, a plurality of first LED chips disposed on the first upper surface, emitting a light penetrating the first substrate, and a first wavelength conversion layer directly contacting the plurality of first LED chips and first upper surface, and a first shape in a cross-sectional view; a second wavelength conversion layer directly contacting the first bottom surface; a second shape in the cross-sectional view substantially the same as the first shape; a second light emitting device separated from the first light emitting device, including a second substrate and plurality of second LEDs disposed on the second substrate; a support base connected to the first light emitting device by a first angle and connected to the second light emitting device by a second angle; and a first support arranged between the support base and first light emitting device.

公开(公告)号：US20220173292A1

公开(公告)日：2022-06-02

申请号：US17456858

申请日：2021-11-29

申请人： EPISTAR CORPORATION

发明人： Ching-Hsing SHEN ,  Wen-Luh LIAO ,  Chen OU ,  Shih-Chang LEE ,  Hui-Fang KAO ,  Yun-Chung CHOU

IPC分类号： H01L33/62

摘要： The present disclosure provides a semiconductor device. The semiconductor device includes an epitaxial stack including a mesa region and a lower region; a first pad on the lower region and a second pad on the mesa region; a first contact between the epitaxial stack and the first pad; a passivation structure covering the epitaxial stack and including a first opening; and a first metal structure in the first opening and disposed between the first contact and the first pad; wherein the first metal structure includes a first top surface away from the epitaxial stack, and the passivation structure including a second top surface at a position corresponding to the lower region and away from the epitaxial stack, and a first height difference between the first top surface and the second top surface is less than 3 μm and larger than zero; and wherein the first metal structure includes a first width adjacent to the first contact and a second width adjacent to the first pad, and the second width is larger than the first width.

公开(公告)号：US11349047B2

公开(公告)日：2022-05-31

申请号：US17114012

申请日：2020-12-07

申请人： EPISTAR CORPORATION

发明人： Yi-Ming Chen ,  Hao-Min Ku ,  Chih-Chiang Lu ,  Tzu-Chieh Hsu

IPC分类号： H01L33/10 ,  H01L33/40 ,  H01L33/38

摘要： This disclosure discloses a light-emitting device. The light-emitting device includes a light-emitting stack having a first-type semiconductor layer, a second-type semiconductor layer, and an active layer formed between the first-type semiconductor layer and the second-type semiconductor layer; and a reflective structure formed on the first-type semiconductor layer and having a first interface and a second interface. A critical angle at the first interface for a light emitted from the light-emitting stack is larger than that at the second interface. The reflective structure electrically connects to the first-type semiconductor layer at the first interface, and an area of the first interface is more than an area of the second interface in a top view.

公开(公告)号：USRE49031E1

公开(公告)日：2022-04-12

申请号：US15863710

申请日：2018-01-05

申请人： EPISTAR CORPORATION ,  INTERLIGHT OPTOTECH CORPORATION

发明人： Hong-Zhi Liu ,  Tzu-Chi Cheng

IPC分类号： H01L33/62 ,  H01L33/50 ,  H01L25/075 ,  F21K99/00 ,  F21V3/00 ,  F21K9/232 ,  F21Y109/00 ,  F21Y115/10 ,  F21Y107/70

摘要： LED assemblies and related LED light bulbs. An LED assembly has a flexible, transparent substrate, an LED chip on the first surface and electrically connected to two adjacent conductive sections, a first wavelength conversion layer, formed on the first surface to substantially cover the LED chip, and a second wavelength conversion layer formed on the second surface. The flexible, transparent substrate has first and second surfaces opposite to each other, and several conductive sections, which are separately formed on the first surface.

公开(公告)号：US20220102582A1

公开(公告)日：2022-03-31

申请号：US17550449

申请日：2021-12-14

申请人： EPISTAR CORPORATION

发明人： Yung-Fu CHANG ,  Fan-Lei WU ,  Shih-Chang LEE ,  Wen-Luh LIAO ,  Hung-Ta CHENG ,  Chih-Chaing YANG ,  Yao-Ru CHANG ,  Yi HSIAO ,  Hsiang CHANG

IPC分类号： H01L33/20

摘要： A semiconductor structure includes a carrier, a bonding structure, a semiconductor stack, a supporting element and a bridge layer. The bonding structure is on the carrier and has an upper surface. The semiconductor stack is on the bonding structure. The supporting element is on the bonding structure and has a side wall. The bridge layer has a first portion directly connected to the supporting element, a second portion connected to the first portion and a third portion connected to the second portion. The second portion and the third portion of the bridge layer are suspended above the upper surface of the bonding structure. The first portion of the bridge layer directly contacts the side wall of the supporting element.