公开(公告)号：US20060244084A1

公开(公告)日：2006-11-02

申请号：US11400605

申请日：2006-04-07

申请人： Byung-Hak Lee ,  Dong-Chan Lim ,  Gil-Heyun Choi ,  Hee-Sook Park

发明人： Byung-Hak Lee ,  Dong-Chan Lim ,  Gil-Heyun Choi ,  Hee-Sook Park

IPC分类号： H01L29/78 ,  H01L21/4763

CPC分类号： H01L21/28061 ,  H01L27/10873 ,  H01L27/10891 ,  H01L29/4933 ,  H01L29/78

摘要： Semiconductor devices and methods of fabricating the same are provided. A gate insulating film is provided on a semiconductor substrate. A polymetal gate electrode is provided on the gate insulating film. The polymetal gate electrode includes a conductive polysilicon film on the gate insulating film, a first metal silicide film on the conductive polysilicon film, a barrier film on the first metal silicide film, and a metal film on the barrier film. The barrier film includes a titanium nitride (TiN) film on the first metal silicide film and a buffer layer between the TiN film and the metal film.

摘要翻译： 提供半导体器件及其制造方法。 栅极绝缘膜设置在半导体衬底上。 在栅极绝缘膜上设置多金属栅电极。 多金属栅电极包括栅绝缘膜上的导电多晶硅膜，导电多晶硅膜上的第一金属硅化物膜，第一金属硅化物膜上的阻挡膜和阻挡膜上的金属膜。 阻挡膜包括第一金属硅化物膜上的氮化钛（TiN）膜和TiN膜与金属膜之间的缓冲层。

公开(公告)号：US20060180875A1

公开(公告)日：2006-08-17

申请号：US11332476

申请日：2006-01-17

申请人： Hee-Sook Park ,  Gil-Heyun Choi ,  Chang-Won Lee ,  Byung-Hak Lee ,  Sun-Pil Youn ,  Dong-Chan Lim ,  Jae-Hwa Park ,  Jang-Hee Lee ,  Woong-Hee Sohn

发明人： Hee-Sook Park ,  Gil-Heyun Choi ,  Chang-Won Lee ,  Byung-Hak Lee ,  Sun-Pil Youn ,  Dong-Chan Lim ,  Jae-Hwa Park ,  Jang-Hee Lee ,  Woong-Hee Sohn

IPC分类号： H01L29/40 ,  H01L21/44

CPC分类号： H01L29/4933 ,  C23C16/42 ,  H01L21/28061 ,  H01L21/28194 ,  H01L21/28556 ,  H01L21/76846 ,  H01L29/517

摘要： In an ohmic layer and methods of forming the ohmic layer, a gate structure including the ohmic layer and a metal wiring having the ohmic layer, the ohmic layer is formed using tungsten silicide that includes tungsten and silicon with an atomic ratio within a range of about 1:5 to about 1:15. The tungsten silicide may be obtained in a chamber using a reaction gas including a tungsten source gas and a silicon source gas by a partial pressure ratio within a range of about 1.0:25.0 to about 1.0:160.0. The reaction gas may have a partial pressure within a range of about 2.05 percent to about 30.0 percent of a total internal pressure of the chamber. When the ohmic layer is employed for a conductive structure, such as a gate structure or a metal wiring, the conductive structure may have a reduced resistance.

摘要翻译： 在欧姆层和形成欧姆层的方法中，包括欧姆层的栅极结构和具有欧姆层的金属布线，欧姆层使用包含钨和硅的硅化钨形成，原子比在约 1:5至约1:15。 可以在室内使用包含钨源气体和硅源气体的反应气体，在约1.0:25.0至约1.0:16.0.0的范围内的分压比获得硅化钨。 反应气体可以具有在室的总内部压力的约2.05％至约30.0％的范围内的分压。 当欧姆层用于诸如栅极结构或金属布线的导电结构时，导电结构可以具有降低的电阻。