LIQUID CRYSTAL DISPLAY PANELS AND DISPLAY APPARATUSES

    公开(公告)号:US20230194929A1

    公开(公告)日:2023-06-22

    申请号:US17926956

    申请日:2021-09-01

    CPC classification number: G02F1/1339 G02F1/133512 G02F1/133357 G02F2202/103

    Abstract: A liquid crystal display panel (100) and a display apparatus (200). The liquid crystal display panel (100) includes a color filter substrate (1), an array substrate (2), and a sealant (3). An amorphous silicon layer (4) and a first interlayer dielectric (5) are provided between a shading layer (12) and a first substrate (11), a first through groove (12a) is formed in the shading layer (12) and the amorphous silicon layer (4), and a part of the sealant (3) is filled in the first through groove (12a) and is in direct contact with the first interlayer dielectric (5); and/or a planarization layer (22) is wrapped with a second interlayer dielectric (6), such that the planarization layer (22) is respectively separated from the sealant (3) and a second substrate (21), and the second interlayer dielectric (6) is in direct contact with the sealant (3). The phenomenon of film separation in a liquid crystal display panel is effectively alleviated, and the reliability of the liquid crystal display panel is improved.

    METHOD FOR MANUFACTURING DISPLAY SUBSTRATE
    580.
    发明公开

    公开(公告)号:US20230163200A1

    公开(公告)日:2023-05-25

    申请号:US17771720

    申请日:2021-03-08

    CPC classification number: H01L29/6675 H01L29/78696 H01L29/78672

    Abstract: A method for manufacturing a display substrate is provided. The method includes: forming a first active layer arranged in the NMOS transistor region and a second active layer arranged in the PMOS transistor region on the base substrate; coating one side, facing away from the base substrate, of the first active layer and one side, facing away from the base substrate, of the second active layer with a first photoresist layer, forming a first pattern layer by patterning the first photoresist layer to expose at least two ends of the first active layer; forming N-type heavily doped regions by performing N-type heavy doping on the two ends of the first active layer with the first pattern layer as a mask; forming a second pattern layer by processing the first pattern layer to expose at least a middle region of the first active layer.

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