公开(公告)号：US20080106322A1

公开(公告)日：2008-05-08

申请号：US11819944

申请日：2007-06-29

Applicant: Chun-Seok Jeong

Inventor： Chun-Seok Jeong

IPC: G01K7/01

CPC classification number: G01K7/425 ,  G01K7/015

Abstract: An on die thermal sensor in a semiconductor memory device includes: a reference voltage generating unit for generating a band gap voltage and generating a reference voltage by using the base band gap voltage; a voltage amplifying unit for outputting a temperature voltage by amplifying the band gap voltage; and a temperature information code generating unit for generating a temperature information code corresponding to a voltage level of the temperature voltage, wherein voltage variation of the temperature voltage is amplified as much as a preset amplifying value and a maximum voltage level of the temperature voltage is maintained lower than that of a power supply voltage used in the semiconductor memory device.

Abstract translation: 半导体存储器件中的管芯式热传感器包括：基准电压产生单元，用于产生带隙电压并通过使用基带电压产生参考电压; 电压放大单元，用于通过放大带隙电压来输出温度电压; 以及温度信息代码产生单元，用于产生对应于温度电压的电压电平的温度信息代码，其中温度电压的电压变化被放大多达预设的放大值，并且维持温度电压的最大电压电平 低于在半导体存储器件中使用的电源电压。

公开(公告)号：US07362248B2

公开(公告)日：2008-04-22

申请号：US11474669

申请日：2006-06-26

Applicant: David C. McClure ,  Sooping Saw

Inventor： David C. McClure ,  Sooping Saw

IPC: H03M1/00

CPC classification number: G01K3/005 ,  G01K7/015

Abstract: A sensing circuit determines whether an integrated circuit is currently exposed to one of a relatively low or a relatively high temperature. A selection circuit selects a measured voltage across the base-emitter of a bipolar transistor if the sensing circuit indicates that the circuit is exposed to the relatively low temperature or, alternatively, selects a measured delta voltage across the base-emitter of the bipolar transistor if the sensing circuit indicates that the circuit is exposed to the relatively high temperature. A comparator compares the selected measured voltage against a first reference voltage indicative of a too cold temperature condition or compares the selected measured delta voltage against a second reference voltage indicative of a too hot temperature condition. As a result of the comparison, detection may be made as to whether the integrated circuit is currently exposed to a too cold or too hot temperature.

Abstract translation: 感测电路确定集成电路当前是否暴露于相对较低或相对高的温度之一。 如果感测电路指示电路暴露于相对较低的温度，则选择电路选择双极晶体管的基极 - 发射极两端的测量电压，或者，选择双极晶体管的基极 - 发射极两端的测量的增量电压，如果 感测电路指示电路暴露于相对较高的温度。 比较器将所选择的测量电压与指示太冷的温度条件的第一参考电压进行比较，或将所选择的测得的增量电压与指示过热温度条件的第二参考电压进行比较。 作为比较的结果，可以检测集成电路当前是否暴露于过冷或过热的温度。

公开(公告)号：US20080030914A1

公开(公告)日：2008-02-07

申请号：US11832774

申请日：2007-08-02

Applicant: Tomas Jahelka ,  Jaromir Schindler

Inventor： Tomas Jahelka ,  Jaromir Schindler

IPC: H02H5/04

CPC classification number: G05F1/569 ,  G01K7/015 ,  H03F1/52 ,  H03F2200/441 ,  H03F2200/447 ,  H03F2200/468 ,  H03F2200/78

Abstract: A microelectronic device includes a first circuit and a second circuit, coupled to the first circuit for selectively preventing operation of the first circuit when a device temperature is higher than a temperature threshold. The second circuit is provided with a temperature responsive element, thermally coupled to the first circuit for providing a shutdown signal correlated to the device temperature. The temperature responsive element includes a reverse-biased junction element and the shutdown signal is correlated to a reverse leakage current of the reverse-biased junction element.

Abstract translation: 微电子器件包括耦合到第一电路的第一电路和第二电路，用于当器件温度高于温度阈值时选择性地防止第一电路的操作。 第二电路设置有热耦合到第一电路的温度响应元件，用于提供与器件温度相关的关断信号。 温度响应元件包括反向偏置接合元件，并且关断信号与反向偏压接合元件的反向泄漏电流相关。

公开(公告)号：US07310013B2

公开(公告)日：2007-12-18

申请号：US11495233

申请日：2006-07-28

Applicant: J. David Porter

Inventor： J. David Porter

IPC: H01L35/00

CPC classification number: G01K7/015 ,  G01K2219/00

Abstract: A temperature sensor device and method of sensing temperature are disclosed. The device and method include generating a reference voltage inversely correlated to the temperature, generating a plurality of analysis voltages correlated to the temperature using a reference current, comparing the reference voltage to each of the plurality of analysis voltages, and generating a temperature estimate based on the comparison. The device and method may also include a method to selectively bypass various resistors in a resistor stack used to generate the various analysis voltages. Another embodiment of the present invention comprises a semiconductor device including at least one temperature sensor according to the invention described herein. The temperature sensor and method of sensing temperature may be incorporated into a semiconductor device, which may be fabricated on a semiconductor wafer and included in an electronic system.

Abstract translation: 公开了一种温度传感器装置和感测温度的方法。 该装置和方法包括产生与温度成反比的参考电压，使用参考电流产生与温度相关的多个分析电压，将参考电压与多个分析电压中的每一个进行比较，以及基于 比较。 该装置和方法还可以包括选择性地旁路用于产生各种分析电压的电阻器堆叠中的各种电阻器的方法。 本发明的另一实施例包括半导体器件，其包括至少一个本文所述的本发明的温度传感器。 温度传感器和感测温度的方法可以结合到半导体器件中，半导体器件可以制造在半导体晶片上并被包括在电子系统中。

公开(公告)号：US20070252616A1

公开(公告)日：2007-11-01

申请号：US11774676

申请日：2007-07-09

Applicant: Rabindranath Balasubramanian ,  Limin Zhu ,  Gregory Bakker

Inventor： Rabindranath Balasubramanian ,  Limin Zhu ,  Gregory Bakker

IPC: G06F13/00

CPC classification number: H03K19/1776 ,  G01K7/015 ,  G06F1/08 ,  G06F1/28 ,  G06F1/30 ,  G06F15/7842 ,  G06F15/7867 ,  H03F3/45475 ,  H03F2203/45136 ,  H03F2203/45166 ,  H03K17/223 ,  H03K19/177 ,  H03K19/17732

Abstract: A programmable system-on-a-chip integrated circuit device includes a programmable logic block, at least one user non-volatile memory block, and temperature sensing and control analog and digital circuits on a single semiconductor integrated circuit chip or a flip chip, face-to-face, or other multiple die configuration. The programmable system-on-a-chip integrated circuit with temperature measuring and control circuitry performs temperature measurement and control functions and can be used to create an on-chip temperature log.

Abstract translation: 可编程片上系统集成电路器件包括可编程逻辑块，至少一个用户非易失性存储器块，以及在单个半导体集成电路芯片或倒装芯片上的温度感测和控制模拟和数字电路 面对或其他多模配置。 具有温度测量和控制电路的可编程片上系统芯片集成电路执行温度测量和控制功能，可用于创建片上温度记录。

公开(公告)号：US20070124622A1

公开(公告)日：2007-05-31

申请号：US11425472

申请日：2006-06-21

Applicant: CHARLES JOHNS ,  MICHAEL WANG

Inventor： CHARLES JOHNS ,  MICHAEL WANG

IPC: G06F1/00

CPC classification number: G01K3/005 ,  G01K7/015 ,  G06F1/206 ,  G06F1/324 ,  Y02D10/126

Abstract: A computer implemented method, data processing system, and processor are provided for implementation of thermal throttling logic. A sensed temperature value is received from a digital thermal sensor representing a current temperature of a unit associated with the digital thermal sensor in the integrated circuit. The sensed temperature is reported as the current temperature in a status register. The unit in the integrated circuit is throttled in response to the current temperature exceeding a first predetermined value.

Abstract translation: 提供计算机实现的方法，数据处理系统和处理器用于实现热节流逻辑。 从表示与集成电路中的数字热传感器相关联的单元的当前温度的数字热传感器接收感测的温度值。 感测到的温度被报告为状态寄存器中的当前温度。 响应于当前温度超过第一预定值，集成电路中的单元被节流。

公开(公告)号：US07213465B2

公开(公告)日：2007-05-08

申请号：US10958014

申请日：2004-10-04

Applicant: Hubert Benzel ,  Frank Schaefer ,  Christoph Schelling

Inventor： Hubert Benzel ,  Frank Schaefer ,  Christoph Schelling

IPC: G01F9/00

CPC classification number: B81C1/00246 ,  B81B2201/0292 ,  B81C2203/0778 ,  G01K7/015 ,  G01L9/0054 ,  G01L19/147 ,  G01P1/023 ,  G01P15/08 ,  G01P15/0802 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48464 ,  H01L2224/73257 ,  H01L2924/16235 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A micromechanical sensor, and a method for manufacturing a micromechanical sensor, featuring, in addition to a sensor element, at least a part of an evaluation circuit. In this context, the micromechanical sensor contains at least a first structural element made of a first material. The first structural element houses at least one sensor region and a part of an evaluation circuit, at least one sensor element being located in the sensor region. Moreover, at least one first and one second side are to be distinguished from one another in the first structural element. The first side of the first structural element features at least the sensor element, while the second side of the first structural element features at least a part of the evaluation circuit. At least parts of the sensor region and/or of the evaluation circuit are formed from the first material by micromechanical processing.

Abstract translation: 微机械传感器和微机械传感器的制造方法，除传感器元件之外，还具有评估电路的至少一部分。 在本文中，微机械传感器至少包含由第一材料制成的第一结构元件。 第一结构元件容纳至少一个传感器区域和评估电路的一部分，至少一个传感器元件位于传感器区域中。 此外，在第一结构元件中至少一个第一和第二侧面将彼此区分开。 第一结构元件的第一侧至少具有传感器元件，而第一结构元件的第二侧具有评估电路的至少一部分。 传感器区域和/或评估电路的至少一部分通过微机械处理由第一材料形成。

公开(公告)号：US07192819B1

公开(公告)日：2007-03-20

申请号：US10894528

申请日：2004-07-20

Applicant: Gobi R. Padmanabhan ,  Visvamohan Yegnashankaran

Inventor： Gobi R. Padmanabhan ,  Visvamohan Yegnashankaran

IPC: H01L21/8234 ,  H01L21/336

CPC classification number: G01L9/0055 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81C1/00158 ,  B81C2201/019 ,  G01K7/015 ,  G01L5/223 ,  G01L9/0042 ,  G01L9/0054

Abstract: A semiconductor sensor device is formed using MEMS technology by placing a thin layer of single-crystal silicon, which includes semiconductor devices, over a cavity, which has been formed in a semiconductor material. The thin layer of single-crystal silicon can be formed by forming the semiconductor devices in the top surface of a single-crystal silicon wafer, thinning the silicon wafer to a desired thickness, and then dicing the thinned wafer to form silicon layers of a desired size. The MEMS device can be used to implement a pressure sensor, microphone, temperature sensor, and a joystick.

Abstract translation: 使用MEMS技术，通过在半导体材料中形成的空腔上放置包括半导体器件的薄层单晶硅来形成半导体传感器装置。 可以通过在单晶硅晶片的顶表面中形成半导体器件，将硅晶片细化到期望的厚度，然后将薄的晶片切割以形成所需的硅层，从而形成单晶硅薄层 尺寸。 MEMS器件可用于实现压力传感器，麦克风，温度传感器和操纵杆。

公开(公告)号：US07129746B1

公开(公告)日：2006-10-31

申请号：US10877043

申请日：2004-06-25

Applicant: Rabindranath Balasubramanian ,  Limin Zhu ,  Theodore Speers ,  Gregory Bakker

Inventor： Rabindranath Balasubramanian ,  Limin Zhu ,  Theodore Speers ,  Gregory Bakker

IPC: H03K19/173

CPC classification number: H03K19/1776 ,  G01K7/015 ,  G06F1/08 ,  G06F1/28 ,  G06F1/30 ,  G06F15/7842 ,  G06F15/7867 ,  H03F3/45475 ,  H03F2203/45136 ,  H03F2203/45166 ,  H03K17/223 ,  H03K19/177 ,  H03K19/17732

Abstract: An integrated circuit includes a plurality of inputs, a plurality of output pads, a programmable logic block, an analog circuit block, an analog-to-digital converter programmably coupleable to individual analog circuits in the analog circuit block, and an interconnect architecture programmably coupling selected ones of the plurality of inputs, the plurality of outputs, the programmable logic block, the analog circuit block, and the analog-to-digital converter. At least one of the inputs may be programmably configured as one of a digital input programmably coupleable to elements in the programmable logic block or as an analog input to an analog circuit in the analog circuit block.

公开(公告)号：US20060061406A1

公开(公告)日：2006-03-23

申请号：US11217435

申请日：2005-09-02

Applicant: Kenichi Takatori

Inventor： Kenichi Takatori

IPC: G06G7/24

CPC classification number: G01K7/015 ,  G01K1/14 ,  G01K2217/00 ,  G02F1/1362 ,  Y10S257/93

Abstract: A thin-film semiconductor device comprises a temperature sensor formed of a thin-film semiconductor and sensing a temperature as current, and a current-voltage converter formed of a thin-film semiconductor and having temperature dependence in which its current-voltage characteristic is different from that of the temperature sensor. A temperature sensed by the temperature sensor is converted to a voltage by the current-voltage converter.

Abstract translation: 薄膜半导体器件包括由薄膜半导体形成的温度传感器并将温度感测为电流，以及由薄膜半导体形成并具有其电流 - 电压特性不同的温度依赖性的电流 - 电压转换器 从温度传感器的。 由温度传感器感测的温度由电流 - 电压转换器转换成电压。