Vitreous silica crucible
    41.
    发明授权
    Vitreous silica crucible 有权
    石英玻璃坩埚

    公开(公告)号:US09416463B2

    公开(公告)日:2016-08-16

    申请号:US13148463

    申请日:2010-12-13

    IPC分类号: C30B35/00 C30B15/10 C03B19/09

    摘要: Provided is a vitreous silica crucible having a reference point, which is capable of accurately detecting the location of a defect in the vitreous silica crucible used for pulling silicon single crystal, determining a defect generating site of silicon single crystal, and investigating the cause of the defect. The reference point used for specifying the position relationship with respect to a particular part is formed in at least one site of an end portion, an inner wall and an outer wall of the crucible.

    摘要翻译: 本发明提供一种具有参考点的氧化硅玻璃坩埚,其能够精确地检测用于拉拔单晶硅的玻璃状石英坩埚中的缺陷的位置,确定单晶硅的缺陷产生位置,并调查其原因 缺陷。 用于指定相对于特定部件的位置关系的参考点形成在坩埚的端部,内壁和外壁的至少一个位置中。

    Vitreous silica crucible
    43.
    发明授权
    Vitreous silica crucible 有权
    石英玻璃坩埚

    公开(公告)号:US09115445B2

    公开(公告)日:2015-08-25

    申请号:US13148457

    申请日:2010-12-13

    摘要: Provided is a vitreous silica crucible which has a special region for suppressing vibration of melt surface during pulling of a silicon single crystal and at the same time, a marking capable of accurately monitoring a changed position of the melt surface when passing through the special region. The special region for preventing sloshing of silicon melt is provided on an inner wall of a straight body portion, and the marking is provided at least at an upper end and a lower end of the special region.

    摘要翻译: 本发明提供一种玻璃状石英玻璃坩埚,其特征在于,在单晶硅拉拔期间具有抑制熔融表面的振动的特殊区域,同时具有能够精确地监测经过特殊区域时的熔融面的变化位置的标记。 用于防止硅熔体晃动的特殊区域设置在直体部分的内壁上,并且标记至少设置在特殊区域的上端和下端。

    Apparatus and method for manufacturing vitreous silica crucible
    44.
    发明授权
    Apparatus and method for manufacturing vitreous silica crucible 有权
    玻璃石坩埚制造装置及方法

    公开(公告)号:US08739573B2

    公开(公告)日:2014-06-03

    申请号:US13389392

    申请日:2010-08-09

    摘要: There are provided an apparatus and a method for manufacturing a vitreous silica crucible which can prevent the deterioration of the inner surface property in the manufacturing process of a vitreous silica crucible. The apparatus includes a mold defining an outer shape of a vitreous silica crucible, and an arc discharge unit having electrodes and a power-supply unit, wherein each of the electrodes includes a tip end directed to the mold, the other end opposite to the tip end, and a bent portion provided between the tip end and the other end.

    摘要翻译: 提供了一种可以防止在石英玻璃坩埚的制造过程中内表面特性劣化的石英玻璃坩埚的制造装置和方法。 该装置包括限定二氧化硅玻璃坩埚的外形的模具和具有电极和电源单元的电弧放电单元,其中每个电极包括指向模具的尖端,与尖端相对的另一端 端部和设置在前端和另一端之间的弯曲部分。

    VITREOUS SILICA CRUCIBLE FOR PULLING SILICON SINGLE CRYSTAL AND METHOD OF MANUFACTURING THE SAME
    45.
    发明申请
    VITREOUS SILICA CRUCIBLE FOR PULLING SILICON SINGLE CRYSTAL AND METHOD OF MANUFACTURING THE SAME 有权
    用于拉丝硅单晶的耐火二氧化硅巧克力及其制造方法

    公开(公告)号:US20120160159A1

    公开(公告)日:2012-06-28

    申请号:US13394284

    申请日:2010-08-10

    IPC分类号: C30B15/10 C03B20/00

    摘要: The present invention provides a vitreous silica crucible which can suppress the sidewall lowering of the crucible under high temperature during pulling a silicon single crystal, and a method of manufacturing such a vitreous silica crucible. The vitreous silica crucible 10 includes an opaque vitreous silica layer 11 provided on the outer surface side of the crucible and containing numerous bubbles, and a transparent vitreous silica layer 12 provided on the inner surface side. The opaque vitreous silica layer 11 includes a first opaque vitreous silica portion 11a provided on the crucible upper portion, and a second opaque vitreous silica portion 11b provided on the crucible lower portion. The specific gravity of the second opaque vitreous silica portion 11b is 1.7 to 2.1, and the specific gravity of the first opaque vitreous silica portion 11a is 1.4 to 1.8, and smaller than that of the second opaque vitreous silica portion. The particle size distribution of the material silica powder for the first opaque vitreous silica portion 11a is wider than that of the second opaque vitreous silica portion 11b, and the material silica powder for the first opaque vitreous silica portion 11a includes more fine powder than that for the second opaque vitreous silica portion 11b.

    摘要翻译: 本发明提供一种可以在拉拔硅单晶时抑制坩埚在高温下的侧壁降低的石英玻璃坩埚,以及制造这种石英玻璃坩埚的方法。 玻璃状石英玻璃坩埚10包括设置在坩埚的外表面侧并且含有大量气泡的不透明玻璃状石英层11和设置在内表面侧的透明氧化硅玻璃层12。 不透明玻璃状石英层11包括设置在坩埚上部的第一不透明玻璃状石英部分11a和设置在坩埚下部的第二不透明玻璃状石英部分11b。 第二不透玻璃状二氧化硅部11b的比重为1.7〜2.1,第一不透明玻璃状石英部11a的比重为1.4〜1.8,小于第二不透明玻璃状二氧化硅部的比重。 用于第一不透明玻璃状石英部分11a的材料二氧化硅粉末的粒度分布比第二不透明玻璃状二氧化硅部分11b的粒度分布宽,并且用于第一不透明玻璃状石英部分11a的材料二氧化硅粉末包含比 第二不透明玻璃状石英部分11b。

    APPARATUS FOR MANUFACTURING VITREOUS SILICA CRUCIBLE
    46.
    发明申请
    APPARATUS FOR MANUFACTURING VITREOUS SILICA CRUCIBLE 审中-公开
    用于制造维生素二氧化硅可溶性的装置

    公开(公告)号:US20120141622A1

    公开(公告)日:2012-06-07

    申请号:US13308308

    申请日:2011-11-30

    IPC分类号: B29C35/02

    CPC分类号: C03B19/095

    摘要: Provided is an apparatus for manufacturing a vitreous silica crucible which has a structure which can reduce gaps between a partition wall and electrodes inserted into through-holes formed in the partition wall while enabling electrodes to move to adjust a heating temperature of arc discharge. A plate-shaped partition wall 15 is placed above the rotating mold 10. Electrodes 13 for heating and fusing are inserted into through-holes 16 penetrating in a thickness direction, and are directed toward the rotating mold 10. A rocking unit 40 is provided on an upper side of the partition wall 15 and rocks the electrodes 13 around virtual rocking axes P, and the virtual rocking axes P pass through the through-holes 16.

    摘要翻译: 本发明提供一种制造石英玻璃坩埚的装置,其具有能够减少分隔壁与插入形成在隔壁中的通孔的电极之间的间隙的结构,同时使电极移动以调节电弧放电的加热温度。 板状分隔壁15被放置在旋转模具10的上方。用于加热和熔合的电极13被插入穿透厚度方向的通孔16中,并被引导到旋转模具10上。摆动单元40设置在 分隔壁15的上侧并围绕虚拟摇摆轴线P围绕电极13,并且虚拟摇摆轴线P穿过通孔16。

    VITREOUS SILICA CRUCIBLE
    47.
    发明申请
    VITREOUS SILICA CRUCIBLE 有权
    紫外线可溶性

    公开(公告)号:US20120125257A1

    公开(公告)日:2012-05-24

    申请号:US13148463

    申请日:2010-12-13

    IPC分类号: C30B15/10

    摘要: Provided is a vitreous silica crucible having a reference point, which is capable of accurately detecting the location of a defect in the vitreous silica crucible used for pulling silicon single crystal, determining a defect generating site of silicon single crystal, and investigating the cause of the defect. The reference point used for specifying the position relationship with respect to a particular part is formed in at least one site of an end portion, an inner wall and an outer wall of the crucible.

    摘要翻译: 本发明提供一种具有参考点的氧化硅玻璃坩埚,其能够精确地检测用于拉拔单晶硅的玻璃状石英坩埚中的缺陷的位置,确定单晶硅的缺陷产生位置,并调查其原因 缺陷。 用于指定相对于特定部件的位置关系的参考点形成在坩埚的端部,内壁和外壁的至少一个位置中。

    VITREOUS SILICA CRUCIBLE FOR PULLING SINGLE-CRYSTAL SILICON AND METHOD OF MANUFACTURING THE SAME
    48.
    发明申请
    VITREOUS SILICA CRUCIBLE FOR PULLING SINGLE-CRYSTAL SILICON AND METHOD OF MANUFACTURING THE SAME 有权
    用于拉伸单晶硅的紫外可溶性硅及其制造方法

    公开(公告)号:US20100236473A1

    公开(公告)日:2010-09-23

    申请号:US12303147

    申请日:2008-09-29

    申请人: Hiroshi Kishi

    发明人: Hiroshi Kishi

    IPC分类号: C30B15/10 C03C10/00

    摘要: In order to provide a vitreous silica crucible which does not employ a crystallization accelerator but is difficult to deform during its use even under high temperature, and is easily manufactured, there is provided a vitreous silica crucible for pulling single-crystal silicon wherein the outer surface layer is formed of a bubble-containing vitreous silica layer, the inner surface layer is formed of a vitreous silica layer whose bubbles are invisible to the naked eye, a surface of the outer surface layer includes an unmelted or half-melted silica layer (abbreviated as a half-melted silica layer), and the center line average roughness (Ra) of the half-melted silica layer is 50 to 200 μm, also preferably, and the thickness of the half-melted silica layer is 0.5 to 2.0 mm.

    摘要翻译: 为了提供即使在高温下使用结晶促进剂也难以变形的石英玻璃坩埚,容易制造,提供了一种用于拉拔单晶硅的玻璃状石英坩埚,其中外表面 层由含气泡的玻璃状二氧化硅层形成,内表面层由气泡对肉眼不可见的玻璃状二氧化硅层形成,外表面层的表面包含未熔融或半熔融的二氧化硅层(缩写为 作为半熔融二氧化硅层),半熔融二氧化硅层的中心线平均粗糙度(Ra)优选为50〜200μm,半熔融二氧化硅层的厚度为0.5〜2.0mm。

    Vitreous silica crucible manufacturing apparatus
    49.
    发明申请
    Vitreous silica crucible manufacturing apparatus 有权
    硅玻璃坩埚制造设备

    公开(公告)号:US20100170298A1

    公开(公告)日:2010-07-08

    申请号:US12684178

    申请日:2010-01-08

    IPC分类号: C03B19/06

    CPC分类号: C03B19/095 H05B7/085

    摘要: A vitreous silica crucible manufacturing apparatus includes a plurality of carbon electrodes configured to heat and melt raw material powder by arc discharge, and a value of a ratio R2/R1 of a diameter R2 of a front end of each of the carbon electrodes to a diameter R1 of a base end is set in a range of 0.6 to 0.8. Each carbon electrode has a diameter reduction portion formed at a front end position and reduced in diameter from a diameter R3 of a base end side to the diameter R2 of the front end. When a length of the diameter reduction portion is L1, the diameter of the front end is R2, the diameter of the base end is R1, an angle between the axis lines of the carbon electrodes is θ1, and X=(R1−R2)/2, a value of L1−(X/tan(θ1/2)) is set in a range of 50 to 150 mm.

    摘要翻译: 玻璃状石英玻璃坩埚的制造装置具有多个碳电极,其通过电弧放电来加热和熔化原料粉末,并且每个碳电极的前端的直径R2的比R2 / R1的值与直径 基端的R1设定在0.6〜0.8的范围内。 每个碳电极具有形成在前端位置并且从基端侧的直径R3到前端的直径R2的直径减小的直径减小部分。 当直径减小部分的长度为L1时,前端的直径为R2,基端的直径为R1,碳电极的轴线之间的角度为1; X =(R1- R2)/ 2,将L1-(X / tan(& 1/2))的值设定在50〜150mm的范围内。