公开(公告)号：US20170148676A1

公开(公告)日：2017-05-25

申请号：US15425558

申请日：2017-02-06

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Joung-Wei Liou ,  Hui-Chun Yang ,  Yu-Yun Peng ,  Keng-Chu Lin

IPC: H01L21/768 ,  H01L21/02

CPC classification number: H01L21/76879 ,  H01L21/02123 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02321 ,  H01L21/76801 ,  H01L21/7682 ,  H01L21/76829 ,  H01L23/31 ,  H01L23/481 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A system and method for a low-k dielectric layer are provided. A preferred embodiment comprises forming a matrix and forming a porogen within the matrix. The porogen comprises an organic ring structure with fewer than fifteen carbons and a large percentage of single bonds. Additionally, the porogen may have a viscosity greater than 1.3 and a Reynolds numbers less than 0.5.

公开(公告)号：US20170053798A1

公开(公告)日：2017-02-23

申请号：US14832565

申请日：2015-08-21

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Kuan-Cheng Wang ,  Chun-Hao Hsu ,  Han-Ti Hsiaw ,  Keng-Chu Lin

IPC: H01L21/02 ,  H01L21/3105 ,  H01L29/66

CPC classification number: H01L21/02348 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/02222 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02326 ,  H01L21/02337 ,  H01L21/3105 ,  H01L21/76224 ,  H01L29/66795

Abstract: An embodiment is a method including depositing a first flowable film over a substrate in a processing region, the first flowable film comprising silicon and nitrogen, curing the first flowable film in a first step at a first temperature with a first process gas and ultra-violet light, the first process gas including oxygen, curing the first flowable film in a second step at a second temperature with a second process gas and ultra-violet light, the second process gas being different than the first process gas, and annealing the cured first flowable film at a third temperature to convert the cured first flowable film into a silicon oxide film over the substrate.

Abstract translation: 一个实施方案是一种方法，包括在处理区域中的衬底上沉积第一可流动膜，第一可流动膜包含硅和氮，在第一温度下用第一工艺气体和紫外线固化第一可流动膜 第一工艺气体包括氧气，在第二步骤中用第二工艺气体和紫外线固化第一可流动膜，第二工艺气体与第一工艺气体不同，并将固化的第一工艺气体退火 在第三温度下将可固化的第一可流动膜转化成氧化硅膜。

公开(公告)号：US20150056555A1

公开(公告)日：2015-02-26

申请号：US13973512

申请日：2013-08-22

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Keng-Chu Lin ,  Joung-Wei Liou ,  Cheng-Han Wu ,  Ya Hui Chang

IPC: H01L21/02 ,  G03F7/038 ,  G03F7/20

CPC classification number: G03F7/0388 ,  G03F7/038 ,  G03F7/0382 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/167 ,  G03F7/2041 ,  G03F7/322 ,  G03F7/325 ,  H01L21/0271 ,  H01L21/31144 ,  H01L21/32139

Abstract: A system and method for depositing a photoresist and utilizing the photoresist are provided. In an embodiment a deposition chamber is utilized along with a first precursor material comprising carbon-carbon double bonds and a second precursor material comprising repeating units to deposit the photoresist onto a substrate. The first precursor material is turned into a plasma in a remote plasma chamber prior to being introduced into the deposition chamber. The resulting photoresist comprises a carbon backbone with carbon-carbon double bonds.

Abstract translation: 提供了一种用于沉积光致抗蚀剂并利用光致抗蚀剂的系统和方法。 在一个实施方案中，使用沉积室以及包含碳 - 碳双键的第一前体材料和包含将光致抗蚀剂沉积到基底上的重复单元的第二前体材料。 第一前体材料在被引入沉积室之前在远程等离子体室中变成等离子体。 得到的光致抗蚀剂包括具有碳 - 碳双键的碳骨架。