Electrophotographic photoreceptor, process cartridge, and image forming apparatus
    41.
    发明授权
    Electrophotographic photoreceptor, process cartridge, and image forming apparatus 有权
    电子照相感光体,处理盒和成像设备

    公开(公告)号:US07951517B2

    公开(公告)日:2011-05-31

    申请号:US12038249

    申请日:2008-02-27

    CPC classification number: G03G15/751 G03G5/14704

    Abstract: An electrophotographic photoreceptor includes an organic photosensitive layer and one or more inorganic thin film layers disposed in this order on a conductive substrate, in which among the one or more inorganic thin film layers at least an inorganic protective layer disposed directly on the organic photosensitive layer has cracks scattered at intervals from about 1 μm to about 10 mm. The inorganic thin film layer having the cracks is a first protective layer and an inorganic thin film is grown on a surface of the first protective layer to form a second protective layer.

    Abstract translation: 电子照相感光体包括在导电性基材上依次设置的有机感光层和一种或多种无机薄膜层,其中,至少在有机感光层上直接配置的无机保护层的一个以上的无机薄膜层中, 以约1μm至约10mm的间隔散布的裂纹。 具有裂纹的无机薄膜层是第一保护层,并且在第一保护层的表面上生长无机薄膜以形成第二保护层。

    MULTIBAND PLANAR ANTENNA AND ELECTRONIC EQUIPMENT
    42.
    发明申请
    MULTIBAND PLANAR ANTENNA AND ELECTRONIC EQUIPMENT 有权
    多平面天线和电子设备

    公开(公告)号:US20100302111A1

    公开(公告)日:2010-12-02

    申请号:US12776583

    申请日:2010-05-10

    CPC classification number: H01Q1/38 H01Q1/243 H01Q5/321 H01Q5/371 H01Q9/285

    Abstract: Disclosed is a multiband planar antenna including: an insulating film, a first antenna section and a second antenna section facing to the first antenna section across a feeding point on a film, wherein the first antenna section includes: a first antenna element including a side having a length in an extending direction corresponds to a first resonance frequency; a shorter second antenna element at a predetermined distance from and in parallel with the first antenna element; and a first coupling section to couple the first and second antenna elements, wherein a length in the extending direction of a first clearance corresponds to a resonance frequency higher than the first resonance frequency, and wherein the second antenna section includes: third and fourth antenna elements; a second coupling section; and a second clearance similar to the above.

    Abstract translation: 公开了一种多波段平面天线,包括:绝缘膜,第一天线部分和跨越薄膜上的馈电点面对第一天线部分的第二天线部分,其中第一天线部分包括:第一天线元件,包括具有 延伸方向上的长度对应于第一共振频率; 距离第一天线元件预定距离并与之平行的较短的第二天线元件; 以及耦合第一和第二天线元件的第一耦合部分,其中第一间隙的延伸方向上的长度对应于高于第一谐振频率的谐振频率,并且其中第二天线部分包括:第三和第四天线元件 ; 第二耦合部分; 和类似于上述的第二间隙。

    Plane circular polarization antenna and electronic apparatus
    43.
    发明申请
    Plane circular polarization antenna and electronic apparatus 有权
    平面圆极化天线和电子设备

    公开(公告)号:US20080180339A1

    公开(公告)日:2008-07-31

    申请号:US12011952

    申请日:2008-01-30

    Applicant: Shigeru Yagi

    Inventor: Shigeru Yagi

    CPC classification number: H01Q9/0421 H01Q1/243 H01Q9/42 H01Q13/10

    Abstract: According to an embodiment, a plane circular polarization antenna comprises a flat insulating substrate and a conductor provided on the flat insulating substrate. The conductor comprises an inverted F antenna including a feeding point, a ground portion, the ground portion including a slot antenna including a slot, and a short-circuiting portion provided in a part of an area between the inverted F antenna and the slot antenna.

    Abstract translation: 根据实施例,平面圆极化天线包括平坦绝缘基板和设置在平坦绝缘基板上的导体。 该导体包括倒置的F天线,其包括馈电点,接地部分,接地部分包括包括时隙的缝隙天线,以及设置在倒置的F天线与缝隙天线之间的区域的一部分中的短路部分。

    Light detection device and mounting method thereof
    44.
    发明授权
    Light detection device and mounting method thereof 失效
    光检测装置及其安装方法

    公开(公告)号:US07173232B2

    公开(公告)日:2007-02-06

    申请号:US10816853

    申请日:2004-04-05

    Abstract: A light detection device which can be stably surface-mounted on, for example, a circuit board or the like, and a mounting method thereof are provided. A light-receiving element includes, a transparent conductive electrode (first electrode), a semiconductor layer, and an electrode (first electrode), which are sequentially laminated on a transparent substrate. An insulative substrate includes a terminal electrode (second electrode) which is provided to be exposed at first and second faces of the insulative substrate. The light-receiving element is disposed at the first face of the insulative substrate, and the transparent conductive electrode and the electrode are electrically connected with the terminal electrode exposed at the first face of the insulative substrate. Hence, the light detection device with this structure is surface-mounted on the circuit board such that the terminal electrode exposed at the second face of the insulative substrate connects with an external terminal of the circuit board.

    Abstract translation: 提供了可以稳定地表面安装在例如电路板等上的光检测装置及其安装方法。 光接收元件包括依次层压在透明基板上的透明导电电极(第一电极),半导体层和电极(第一电极)。 绝缘性基板包括设置为在绝缘基板的第一面和第二面露出的端子电极(第二电极)。 光接收元件设置在绝缘基板的第一面上,透明导电电极和电极与在绝缘基板的第一面露出的端子电极电连接。 因此,具有这种结构的光检测装置表面安装在电路板上,使得在绝缘基板的第二面露出的端子电极与电路板的外部端子连接。

    Ultraviolet ray measuring method and ultraviolet ray measuring device
    45.
    发明授权
    Ultraviolet ray measuring method and ultraviolet ray measuring device 失效
    紫外线测量方法和紫外线测量装置

    公开(公告)号:US07148489B2

    公开(公告)日:2006-12-12

    申请号:US10961197

    申请日:2004-10-12

    Applicant: Shigeru Yagi

    Inventor: Shigeru Yagi

    CPC classification number: G01J1/429 G01J1/0228 G01J1/0247 G01J2001/4266

    Abstract: An ultraviolet ray measuring method using an ultraviolet ray receiving element having a specific spectral sensitivity. The method includes: estimating an estimated value of an entire region from the spectral sensitivity of the ultraviolet ray receiving element and a solar spectral radiation spectrum; estimating an estimated value of a specific region from a specific action curve and the spectral sensitivity and the solar spectral radiation spectrum; and determining specific ultraviolet ray information by, on the basis of the estimated value of the entire region and the estimated value of the specific region, correcting an actually measured value which is measured by the ultraviolet ray receiving element. Further, specific ultraviolet information, which is obtained on the basis of sun altitude information, is also corrected.

    Abstract translation: 一种使用具有特定光谱灵敏度的紫外线接收元件的紫外线测量方法。 该方法包括:从紫外线接收元件的光谱灵敏度和太阳光谱辐射光谱估计整个区域的估计值; 从特定动作曲线和光谱灵敏度和太阳光谱辐射谱估计特定区域的估计值; 以及基于整个区域的估计值和特定区域的估计值来确定由紫外线接收元件测量的实际测量值的特定紫外线信息。 此外,还根据太阳高度信息获得的特定紫外线信息也被校正。

    Thin film transistor and display device having the same
    46.
    发明授权
    Thin film transistor and display device having the same 有权
    薄膜晶体管和具有该薄膜晶体管的显示装置

    公开(公告)号:US06713785B2

    公开(公告)日:2004-03-30

    申请号:US10219500

    申请日:2002-08-16

    Applicant: Shigeru Yagi

    Inventor: Shigeru Yagi

    Abstract: A thin film transistor has, on a transparent substrate, a transparent semiconductor layer containing nitrogen, hydrogen and one or more elements selected from Al, Ga and In, a transparent source electrode and a transparent drain electrode at least partially in contact with the transparent semiconductor layer, and a transparent gate electrode.

    Abstract translation: 薄膜晶体管在透明基板上具有含有氮,氢和选自Al,Ga和In的一种或多种元素的透明半导体层,透明源电极和至少部分地与透明半导体接触的透明漏电极 层和透明栅电极。

    UV light sensing element
    47.
    发明授权
    UV light sensing element 有权
    紫外线感应元件

    公开(公告)号:US06639292B2

    公开(公告)日:2003-10-28

    申请号:US10093422

    申请日:2002-03-11

    Applicant: Shigeru Yagi

    Inventor: Shigeru Yagi

    Abstract: A UV light sensing element has at least a first electrode and a sensor. The first electrode has a semiconductor containing at least one element selected from Al, Ga and In together with nitrogen or oxygen, and the sensor layer has a semiconductor containing at least one element selected from Al, Ga and In together with nitrogen. A longer wavelength end of an absorption spectrum for the first electrode is located at a position nearer to a shorter wavelength side than a longer wavelength end of an absorption spectrum for the sensor.

    Abstract translation: UV光感测元件至少具有第一电极和传感器。 第一电极具有含有选自Al,Ga和In中的至少一种元素与氮或氧的半导体,并且传感器层与氮一起含有至少一种选自Al,Ga和In的元素的半导体。 用于第一电极的吸收光谱的较长波长端位于比传感器的吸收光谱的较长波长端更靠近较短波长侧的位置。

    Semiconductor device and method and apparatus for manufacturing semiconductor device

    公开(公告)号:US06562702B2

    公开(公告)日:2003-05-13

    申请号:US09772863

    申请日:2001-01-31

    Applicant: Shigeru Yagi

    Inventor: Shigeru Yagi

    Abstract: Provided is a method and apparatus for the production of a semiconductor device, the method and the apparatus producing a high quality and highly functional semiconductor device efficiently at low temperatures in a short time and also a high quality and highly functional semiconductor device produced by the method and apparatus. The semiconductor device is produced by forming a film of a nitride compound on a substrate having heat resistance at 600° C. or less, wherein the nitride compound includes one or more elements selected from group IIIA elements of the periodic table and a nitrogen atom and produces photoluminescence at the band edges at room temperature. The method for producing a semiconductor device comprises introducing an organic metal compound containing one or more elements selected from group IIIA elements of the periodic table intermittently in an activated environment, while continuously activating a nitrogen compound, to form a film of a nitride compound containing nitrogen and the group IIIA elements on a substrate.

    Semiconductor device and method and apparatus for manufacturing semiconductor device
    49.
    发明授权
    Semiconductor device and method and apparatus for manufacturing semiconductor device 有权
    半导体装置及半导体装置的制造方法及装置

    公开(公告)号:US06362494B1

    公开(公告)日:2002-03-26

    申请号:US09294403

    申请日:1999-04-20

    Applicant: Shigeru Yagi

    Inventor: Shigeru Yagi

    Abstract: Provided is a method and apparatus for the production of a semiconductor device, the method and the apparatus producing a high quality and highly functional semiconductor device efficiently at low temperatures in a short time and also a high quality and highly functional semiconductor device produced by the method and apparatus. The semiconductor device is produced by forming a film of a nitride compound on a substrate having heat resistance at 600° C. or less, wherein the nitride compound includes one or more elements selected from group IIIA elements of the periodic table and a nitrogen atom and produces photoluminescence at the band edges at room temperature. The method for producing a semiconductor device comprises introducing an organic metal compound containing one or more elements selected from group IIIA elements of the periodic table intermittently in an activated environment, while continuously activating a nitrogen compound, to form a film of a nitride compound containing nitrogen and the group IIIA elements on a substrate.

    Abstract translation: 本发明提供一种制造半导体器件的方法和装置,该方法和装置在短时间内在低温下有效地生产高质量和高功能的半导体器件,并且还提供了一种通过该方法制造的高品质和高功能的半导体器件 和装置。 半导体器件通过在600℃以下的耐热性的基板上形成氮化物的膜而制造,其中,所述氮化物包含选自元素周期表的IIIA族元素和氮原子的一种以上的元素, 在室温下在带边缘产生光致发光。 制造半导体装置的方法包括在活化环境中间歇地引入含有选自元素周期表的IIIA族元素的一种或多种元素的有机金属化合物,同时连续活化氮化合物,形成含有氮的氮化物的膜 和基团上的IIIA族元素。

    Solar cell, self-power-supply display device using same, and process for producing solar cell
    50.
    发明授权
    Solar cell, self-power-supply display device using same, and process for producing solar cell 失效
    太阳能电池,使用其的自供电显示装置以及太阳能电池的制造方法

    公开(公告)号:US06297442B1

    公开(公告)日:2001-10-02

    申请号:US09413805

    申请日:1999-10-07

    CPC classification number: H01L31/022466 H01L31/022475 H01L31/04 Y02E10/50

    Abstract: It is to provide an essentially transparent solar cell of high efficiency that can be used by accumulating with a display device to generate electricity simultaneously with utilization of the display function, a self-power-supply display device comprising the same, and a process for producing the solar cell. The solar cell comprises at least a transparent conductive substrate having thereon a photoconductor layer that is transparent to a visible ray and has an absorbance of 0.8 or less at a wavelength of from 400 to 800 nm, and a transparent conductive electrode in this order. An embodiment, in which the photoconductor layer contains at least one element selected from Group IIIA elements and at least one element selected from Group VA elements in the Periodic Table, and an embodiment, in which the photoconductor layer contains a metallic oxide semiconductor, are preferred. Furthermore, an embodiment, in which the metallic oxide semiconductor is titanium oxide or zinc oxide, and an embodiment, in which the photoconductor layer has an optical gap of 2.8 eV or more, are preferred.

    Abstract translation: 提供一种高效率的基本上透明的太阳能电池,其可以通过积累显示装置同时利用显示功能而使用,包括该显示功能的自供电显示装置和用于生成 太阳能电池。 该太阳能电池至少具有透明导电性基板,其上具有对可见光透明的感光体层,在波长400〜800nm下的吸光度为0.8以下,透明导电电极依次为透明导电性基板。 其中光电导体层含有选自IIIA族元素中的至少一种元素和选自元素周期表第VA族元素中的至少一种元素的实施方案,以及其中光电导体层含有金属氧化物半导体的实施方案是优选的 。 此外,金属氧化物半导体是氧化钛或氧化锌的实施方式以及其中光电导体层的光学间隙为2.8eV以上的实施方式是优选的。

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