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公开(公告)号:US20180016495A1
公开(公告)日:2018-01-18
申请号:US15210171
申请日:2016-07-14
Inventor: Tae Gon KIM , Yehonadav BEKENSTEIN , Eun Joo JANG , Paul ALIVISATOS
CPC classification number: C09K11/7492 , B82Y20/00 , B82Y30/00 , B82Y40/00 , C09K11/025 , C09K11/72 , H01L31/035218 , H01L33/502 , Y02E10/52 , Y10S977/774 , Y10S977/895 , Y10S977/95
Abstract: An indium-containing quantum dot including a compound represented by Chemical Formula 1: In1-xMxA Chemical Formula 1 wherein, in Chemical Formula 1, M is aluminum, gallium, yttrium, or scandium, A is nitrogen, phosphorous, arsenic, antimony, bismuth, or a combination thereof, and X is greater than or equal to 0 and less than 1, wherein the indium-containing quantum dot includes fluorine and oxygen to bonded to a surface of the indium-containing quantum dot, wherein an amount of the fluorine is greater than or equal to about 10 atomic percent based on a total number of indium atoms in the indium-containing quantum dot as determined by Rutherford backscattering analysis, and wherein an amount of the oxygen is about 5 atomic percent to about 50 atomic percent based on the total number of indium atoms included in the quantum dot as determined by Rutherford backscattering analysis.
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42.
公开(公告)号:US20150083969A1
公开(公告)日:2015-03-26
申请号:US14494673
申请日:2014-09-24
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hyunki KIM , Shin Ae JUN , Eun Joo JANG , Yongwook KIM , Tae Gon KIM , Yuho WON , Taekhoon KIM , Hyo Sook JANG
IPC: C09K11/88
CPC classification number: C09K11/883 , B82Y20/00 , B82Y40/00 , C09K11/025 , C09K11/565 , C09K11/61 , C09K11/612 , C09K11/70 , C09K11/705 , C09K11/88 , Y10S977/774 , Y10S977/892 , Y10S977/95
Abstract: A nanocrystal particle including at least one semiconductor material and at least one halogen element, the nanocrystal particle including: a core comprising a first semiconductor nanocrystal; and a shell surrounding the core and comprising a crystalline or amorphous material, wherein the halogen element is present as being doped therein or as a metal halide
Abstract translation: 包括至少一种半导体材料和至少一种卤素元素的纳米晶体颗粒,所述纳米晶体颗粒包括:包含第一半导体纳米晶体的芯; 以及围绕所述芯并且包含结晶或非晶材料的壳,其中所述卤素元素作为掺杂在其中或作为金属卤化物存在
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公开(公告)号:US20240105885A1
公开(公告)日:2024-03-28
申请号:US18519534
申请日:2023-11-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Shang Hyeun PARK , Deukseok CHUNG , Tae Gon KIM , Min Jong BAE , Shin Ae JUN
CPC classification number: H01L33/505 , H01L25/167 , H01L33/504 , H01L2933/0041 , H01L2933/0091
Abstract: A display panel including a wavelength conversion structure that includes a base structure including partition walls that define a first space and a second space, a first quantum dot composite disposed in the first space, and a second quantum dot composite disposed in the second space. The height of the partition wall is greater than or equal to about 5 micrometers and less than or equal to about 50 micrometers, and the first quantum dot composite provides a first top surface and the second quantum dot composite provides a second top surface. A production method for making the wavelength conversion structure uses a first ink composition that includes first quantum dots and a first matrix, and a second ink composition that includes second quantum dots and a second matrix.
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公开(公告)号:US20220179140A1
公开(公告)日:2022-06-09
申请号:US17546268
申请日:2021-12-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Shang Hyeun PARK , Tae Gon KIM , Shin Ae JUN
Abstract: A color filter including a first layer including first quantum dots and a second layer including second quantum dots that are different from the first quantum dots, and disposed on the first layer, wherein a quantum yield of the first quantum dots is greater than a quantum yield of the second quantum dots, and wherein an absorption of blue light of the second quantum dots is greater than an absorption of the blue light of the first quantum dots.
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公开(公告)号:US20220179139A1
公开(公告)日:2022-06-09
申请号:US17546257
申请日:2021-12-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Tae Gon KIM , Shang Hyeun PARK , Shin Ae JUN
Abstract: A color filter including a first pixel (or color conversion region) that is configured to emit a first light and a display device including the color filter. The first pixel includes a (first) quantum dot composite (or a color conversion layer including the quantum dot composite), wherein the quantum dot composite may include a matrix and a plurality of quantum dots dispersed (e.g., randomly) in the matrix, wherein the plurality of the quantum dots exhibit a multi-modal distribution (e.g., a bimodal distribution) including a first peak particle size and a second peak particle size in a size analysis, wherein the second peak particle size is greater than the first peak particle size, and a difference between the first peak particle size and the second peak particle size is less than or equal to about 5 nanometers (nm) (e.g., less than or equal to about 4.5 nm).
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公开(公告)号:US20210371745A1
公开(公告)日:2021-12-02
申请号:US17331861
申请日:2021-05-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Shang Hyeun PARK , Tae Gon KIM , Shin Ae JUN
Abstract: A quantum dot composite comprising: a matrix and a plurality of quantum dots dispersed in the matrix, wherein the plurality of the quantum dots comprises a semiconductor nanocrystal core including indium and phosphorous, a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, and the semiconductor nanocrystal shell including zinc, selenium, and sulfur. The arithmetic size of the plurality of the quantum dots is greater than or equal to about 8 nm, wherein the quantum dot composite is configured to emit red light, and wherein when the quantum dot composite is irradiated with light of a wavelength of from about 450 nm to about 470 nm for a time period of less than or equal to about 500 hours, a luminance increase of the quantum dot composite is less than or equal to about 1.2% of an initial luminance of the quantum dot composite.
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公开(公告)号:US20210355380A1
公开(公告)日:2021-11-18
申请号:US17238538
申请日:2021-04-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sung Jun PARK , Junghwa KIM , Tae Gon KIM , Taekhoon KIM , Young Mo SUNG , Nayoun WON , Dongjin YUN , Mi Hye LIM , Shin Ae JUN , Hyeonsu HEO
IPC: C09K11/56
Abstract: A quantum dot including a semiconductor nanocrystal core including Group III-V compound, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc and sulfur, and a composite/electronic device. The quantum dot does not include cadmium and the first semiconductor nanocrystal shell includes a polyvalent metal dopant at an interface with the second semiconductor nanocrystal shell.
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公开(公告)号:US20210351239A1
公开(公告)日:2021-11-11
申请号:US17316712
申请日:2021-05-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Min Jong BAE , Deukseok CHUNG , Tae Gon KIM , Shang Hyeun PARK , Shin Ae JUN
Abstract: An electronic device includes a first substrate, a plurality of light emitting elements each having a horizontal length and a vertical length which are less than or equal to about 10 micrometers (μm), each of the plurality of light emitting elements being disposed on the first substrate, a quantum dot color filter layer disposed on the plurality of light emitting elements, and a first overcoat layer between a plurality of light emitting elements and the quantum dot color filter layer. The quantum dot color filter layer includes a plurality of quantum dot color filters partitioned by a plurality of first partition walls so as to be overlapped with the plurality of light emitting elements, respectively.
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公开(公告)号:US20210324263A1
公开(公告)日:2021-10-21
申请号:US17356721
申请日:2021-06-24
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Tae Gon KIM , Deukseok CHUNG , Jooyeon AHN , Shin Ae JUN
IPC: C09K11/02 , H05B33/22 , C08G77/04 , C09D183/08 , C08G77/28 , C09K11/70 , C08G77/388 , C09K11/56 , C09D183/10 , C08G77/38 , C09K11/08 , G02F1/1335 , G02F1/13357 , H01L27/32 , H01L51/52
Abstract: A layered structure including a photoluminescent layer including a quantum dot polymer composite; a light absorption layer disposed on the photoluminescent layer, the light absorption layer including an absorptive color-filter material; and a silicon containing layer disposed between the photoluminescent layer and the light absorption layer, wherein the quantum dot polymer composite includes a first polymer matrix and a plurality of quantum dots dispersed in the first polymer matrix, and the plurality of quantum dots absorb excitation light and emits light in a longer wavelength than the wavelength of the excited light; and the absorptive color-filter material is dispersed in a second polymer matrix, and the absorptive color-filter material absorbs the excitation light that passes through the photoluminescent layer and transmits the light emitted from the plurality of quantum dots and an electronic device including the same.
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50.
公开(公告)号:US20210284905A1
公开(公告)日:2021-09-16
申请号:US17308333
申请日:2021-05-05
Inventor: Ha Il KWON , Tae Gon KIM , Shang Hyeun PARK , Eun Joo JANG , Shin Ae JUN , Garam PARK
Abstract: A composition including a plurality of quantum dots; a binder polymer; a thiol compound having at least two thiol groups; a polyvalent metal compound; a polymerizable monomer having a carbon-carbon double bond; a photoinitiator; and a solvent.
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