公开(公告)号：US20230092061A1

公开(公告)日：2023-03-23

申请号：US17554171

申请日：2021-12-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byounghak Hong ,  Seungchan Yun ,  Kang-ill Seo

IPC: H01L27/02 ,  H01L27/07 ,  H01L29/861 ,  H01L29/739 ,  H01L21/8238

Abstract: Diode structures of stacked devices and methods of forming the same are provided. Diode structures may include a substrate, an upper semiconductor layer that is spaced apart from the substrate in a vertical direction, an upper thin semiconductor layer protruding from a side surface of the upper semiconductor layer in a first horizontal direction, a lower semiconductor layer that is between the substrate and the upper semiconductor layer and has a first conductivity type, a lower thin semiconductor layer protruding from a side surface of the lower semiconductor layer in the first horizontal direction, a first diode contact that is electrically connected to the lower semiconductor layer, and a second diode contact that is electrically connected to one of the upper semiconductor layer and a portion of the substrate. The one of the upper semiconductor layer and the portion of the substrate may have a second conductivity type.