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公开(公告)号:US11574975B2
公开(公告)日:2023-02-07
申请号:US16882260
申请日:2020-05-22
Applicant: Samsung Display Co., Ltd.
Inventor: Sung-Jae Moon , Dong Gyu Kim , Sun Park
IPC: H01L27/32
Abstract: The present disclosure relates to a light emitting diode display device, and a light emitting diode display device according to an exemplary embodiment includes: a substrate; a semiconductor disposed on the substrate; a gate electrode disposed on the semiconductor; an interlayer insulating layer disposed on the substrate and the gate electrode; source and drain electrodes disposed on the interlayer insulating layer and connected to the semiconductor; a first slit provided in the interlayer insulating layer; and a first wire disposed on the interlayer insulating layer and configured to overlap the first slit.
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公开(公告)号:US10886470B2
公开(公告)日:2021-01-05
申请号:US15483879
申请日:2017-04-10
Applicant: Samsung Display Co. Ltd.
Inventor: Hyuk Soon Kwon , Chun Gi You , Sun Park , Jong Moo Huh
Abstract: An organic light emitting display device includes a substrate, a semiconductor pattern disposed on the substrate, a conductive line disposed in a different layer from the semiconductor pattern, a pixel electrode disposed on the conductive line and on the semiconductor pattern, and a connection electrode disposed in a same layer as the pixel electrode. The connection electrode may be connected to the semiconductor pattern and the conductive line.
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43.
公开(公告)号:US10770484B2
公开(公告)日:2020-09-08
申请号:US16298270
申请日:2019-03-11
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor: Sun Park , Chungi You , Hyuksoon Kwon
IPC: H01L27/12 , H01L29/66 , H01L29/423 , H01L27/32 , H01L29/786
Abstract: A thin film transistor including a substrate; a semiconductor layer disposed over the substrate; a gate insulting film disposed over the semiconductor layer; and a gate electrode. The semiconductor layer includes a channel region, a source region, and a drain region. The gate insulating film includes a first region and a second region. The second region borders the first region. The gate electrode is disposed over the first region. A step shape is formed where the second region meets the first region.
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公开(公告)号:US10665620B2
公开(公告)日:2020-05-26
申请号:US16407714
申请日:2019-05-09
Applicant: Samsung Display Co., Ltd.
Inventor: Sun Park , Ji Won Sohn , Su Yeon Yun
IPC: H01L27/12 , H01L51/00 , H01L51/52 , G02F1/13 , G02F1/1333 , G02F1/1368 , G02F1/1362 , H01L27/32
Abstract: A display device includes a substrate, an insulating layer, and a crack-sensing line. The substrate includes a display area having a plurality of pixels to display images, and a non-display area surrounding the display area. The insulating layer is disposed in the non-display area and includes a recess. The crack-sensing line is disposed in and extends along the recess, and electrically connected to at least one of the pixels. The recess is disposed at a surface or inside of the insulating layer, and extends along the non-display area.
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45.
公开(公告)号:US10256256B2
公开(公告)日:2019-04-09
申请号:US15379602
申请日:2016-12-15
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor: Sun Park , Chungi You , Hyuksoon Kwon
IPC: H01L27/12 , H01L27/32 , H01L29/786 , H01L29/66
Abstract: A thin film transistor including a substrate; a semiconductor layer disposed over the substrate; a gate insulting film disposed over the semiconductor layer; and a gate electrode. The semiconductor layer includes a channel region, a source region, and a drain region. The gate insulating film includes a first region and a second region. The second region borders the first region. The gate electrode is disposed over the first region. A step shape is formed where the second region meets the first region.
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公开(公告)号:US10170527B2
公开(公告)日:2019-01-01
申请号:US15712824
申请日:2017-09-22
Applicant: Samsung Display Co., Ltd.
Inventor: Kyung Hoon Park , Jeong Hwan Kim , Sun Park , Won ho Jang , Joo hyeon Jo
IPC: H01L27/32
Abstract: An organic light emitting display device comprises a common voltage line formed over a peripheral region of a substrate; a passivation layer formed over a pixel region of the substrate and the peripheral region; pixel electrodes formed over the pixel region; and a pixel defining layer formed over the pixel region and the peripheral region. The pixel defining layer defines pixel openings overlapping the pixel electrodes, respectively. The device further comprises organic light emitting layers formed over the pixel region, and disposed in the pixel openings and over the pixel electrodes, respectively; and a common electrode formed over the pixel and peripheral regions. The common electrode is disposed over the pixel defining layer and the organic light emitting layers. The common electrode contacts the common voltage line. The passivation layer comprises a portion overlapping the common voltage line but not overlapping the pixel defining layer.
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公开(公告)号:US10043830B2
公开(公告)日:2018-08-07
申请号:US14864451
申请日:2015-09-24
Applicant: Samsung Display Co., Ltd.
Inventor: Sun Park , Jeonghwan Kim , Wonho Jang , Joohyeon Jo
Abstract: A thin film transistor (TFT) circuit device comprises a substrate comprising a major surface; a gate line formed over the substrate and extending in a first direction when viewed in a viewing direction perpendicular to the major surface; an insulating layer formed over the gate line; an electrically conductive line formed over the insulating layer and extending in a second direction when viewed in the viewing direction, the second direction being different from the first direction, the electrically conductive line comprising a source line or a data line; and a semiconductor piece formed over the substrate. The semiconductor piece comprises a portion which is located between the substrate and the gate line and overlaps the gate line and the electrically conductive line at an intersection of the gate line and the electrically conductive line when viewed in the viewing direction.
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公开(公告)号:US09881988B2
公开(公告)日:2018-01-30
申请号:US15204908
申请日:2016-07-07
Applicant: Samsung Display Co., Ltd.
Inventor: Sun Park
IPC: H01L27/32
CPC classification number: H01L27/3276 , H01L27/3262 , H01L2227/323 , H01L2251/5338
Abstract: A flexible display is disclosed. In one aspect, the flexible display includes a substrate, a gate insulating layer formed over the substrate, an interlayer insulating layer formed over the gate insulating layer, and a trench disposed between the gate and interlayer insulating layers and configured to accommodate a signal line therein.
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公开(公告)号:US09825176B2
公开(公告)日:2017-11-21
申请号:US15141325
申请日:2016-04-28
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor: Yul-Kyu Lee , Kyu-Sik Cho , Sun Park
IPC: H01L29/786 , H01L27/12 , H01L29/49 , H01L29/66 , H01L27/32
CPC classification number: H01L29/78645 , H01L27/1222 , H01L27/1274 , H01L27/3262 , H01L29/4908 , H01L29/6675 , H01L29/78675 , H01L29/78696
Abstract: A thin film transistor includes: a substrate, a semiconductor layer disposed on the substrate, a first gate electrode and a second gate electrode disposed on the semiconductor layer, a gate insulating layer disposed between the semiconductor layer and the first and second gate electrodes and having a first through hole between the first and second gate electrodes and a capping layer covering the first gate electrode and contacting the semiconductor layer via the first through hole. The capping layer includes a conductive material.
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公开(公告)号:US09818969B2
公开(公告)日:2017-11-14
申请号:US14802487
申请日:2015-07-17
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor: Kyung Hoon Park , Sun Park , Chun Gi You
CPC classification number: H01L51/5209 , H01L27/3258 , H01L51/5271
Abstract: An OLED display device includes a driving semiconductor layer on a substrate, a gate insulating layer covering the driving semiconductor layer, a driving gate electrode and etching preventing layer on the gate insulating layer, a passivation layer on the gate insulating layer, driving gate electrode, and etching preventing layer, and including a plurality of protruding and depressed patterns, driving source and drain electrodes on the passivation layer, a pixel electrode on the protruding and depressed pattern, and exposed etching preventing layer, the pixel electrode having a protruding and depressed shape, a pixel definition layer on the passivation layer, and the driving source and drain electrodes, and having a pixel opening exposing the pixel electrode, an organic emission layer on the exposed pixel electrode, and a common electrode on the organic emission layer and pixel definition layer. The protruding and depressed pattern partially exposes the etching preventing layer.
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