公开(公告)号：US09142646B2

公开(公告)日：2015-09-22

申请号：US14645185

申请日：2015-03-11

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Ferruccio Frisina ,  Angelo Magri′ ,  Mario Giuseppe Saggio

IPC: H01L21/20 ,  H01L29/66 ,  H01L29/16 ,  H01L29/165 ,  H01L29/06 ,  H01L21/02

CPC classification number: H01L29/66666 ,  H01L21/02529 ,  H01L21/02532 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0638 ,  H01L29/0661 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/165 ,  H01L29/267 ,  H01L29/402 ,  H01L29/66431 ,  H01L29/7811 ,  H01L29/7813

Abstract: An embodiment of an integrated electronic device formed in a semiconductor body delimited by a lateral surface, which includes: a substrate made of a first semiconductor material; a first epitaxial region made of a second semiconductor material, which overlies the substrate and defines a first surface; a second epitaxial region made of a third semiconductor material, which overlies the first surface and is in contact with the first epitaxial region, the third semiconductor material having a bandgap narrower than the bandgap of the second semiconductor material; an active area, extending within the second epitaxial region and housing at least one elementary electronic component; and an edge structure, arranged between the active area and the lateral surface, and including a dielectric region arranged laterally with respect to the second epitaxial region, which overlies the first surface and is in contact with the first epitaxial region.

公开(公告)号：US08828809B2

公开(公告)日：2014-09-09

申请号：US13887066

申请日：2013-05-03

Applicant: STMicroelectronics S.r.l.

Inventor： Mario Giuseppe Saggio ,  Alfio Guarnera

IPC: H01L21/332 ,  H01L21/761 ,  H01L29/78 ,  H01L29/06

CPC classification number: H01L21/761 ,  H01L29/0634 ,  H01L29/0638 ,  H01L29/0696 ,  H01L29/7811

Abstract: An embodiment of a semiconductor power device provided with: a structural body made of semiconductor material with a first conductivity, having an active area housing one or more elementary electronic components and an edge area delimiting externally the active area; and charge-balance structures, constituted by regions doped with a second conductivity opposite to the first conductivity, extending through the structural body both in the active area and in the edge area in order to create a substantial charge balance. The charge-balance structures are columnar walls extending in strips parallel to one another, without any mutual intersections, in the active area and in the edge area.

Abstract translation: 一种半导体功率器件的实施例，其具备：由具有第一导电性的半导体材料制成的结构体，其具有容纳一个或多个基本电子部件的有源区域和在有源区域外部限定的边缘区域; 并且由掺杂有与第一导电性相反的第二导电性的区域构成的电荷平衡结构在有源区域和边缘区域中延伸穿过结构体，以产生实质的电荷平衡。 电荷平衡结构是在活性区域和边缘区域中彼此平行延伸的柱状壁，而没有任何相互交叉。