Abstract:
An information processing apparatus includes a control part. The control part performs control to transmit a frame for requesting the transmission of data to an information processing apparatus as a destination of the data and for requesting information processing apparatuses other than the information processing apparatus as the destination to set a transmission inhibition time, the frame being transmitted with transmitting power determined on the basis of surrounding environment information regarding an environment surrounding the information processing apparatus transmitting the frame. Transmission of the frame causes the transmission inhibition time to be set over an appropriate range of information processing apparatuses. Efficiency of utilization of communication resources is improved by suitably setting a transmission inhibition time.
Abstract:
A communication method, program, and communication device that selects other communication devices capable of setting transmission power such that reception power falls within a predetermined range, from a plurality of other communication devices that perform multiplexing communication, and transmits a transmission power setting request indicating the transmission power to each of the other selected communication devices.
Abstract:
Provided is a communication device configured to operate in a plurality of communication modes and maintain information related to retransmission of data in accordance with switching of the communication modes.
Abstract:
A wireless communication device includes: a receiving unit that receives a first signal storing first information with which precision or accuracy of transmission power is recognized; and a transmission unit that transmits a second signal regarding permission of multiple access that allows simultaneous communication with at least one first wireless communication device identified on the basis of the first information. A wireless communication device includes: a transmission unit that transmits a first signal storing first information with which precision or accuracy of transmission power is recognized; a receiving unit that receives a second signal regarding permission of multiple access that allows simultaneous communication after the transmission of the first signal; and a control unit that controls transmission of a third signal on the basis of the second signal.
Abstract:
The present technology relates to a solid-state image sensor, an imaging device, and electronic equipment configured such that an FD is shared by a plurality of pixels to further miniaturize the pixels at low cost without lowering of sensitivity and a conversion efficiency. In a configuration in which a plurality of pixels are arranged with respect to at least either of one of the OCCFs or one of the OCLs, a floating diffusion (FD) is shared by a sharing unit including a plurality of pixels, the plurality of pixels including pixels of at least either of different OCCFs or different OCLs. The present technology is applicable to a CMOS image sensor.
Abstract:
The present technology relates to a solid-state image sensor, an imaging device, and electronic equipment configured such that an FD is shared by a plurality of pixels to further miniaturize the pixels at low cost without lowering of sensitivity and a conversion efficiency.In a configuration in which a plurality of pixels are arranged with respect to at least either of one of the OCCFs or one of the OCLs, a floating diffusion (FD) is shared by a sharing unit including a plurality of pixels, the plurality of pixels including pixels of at least either of different OCCFs or different OCLs. The present technology is applicable to a CMOS image sensor.
Abstract:
There is provided a solid-state imaging apparatus including a plurality of photoelectric conversion regions which photoelectrically convert light incident from a rear surface side of a semiconductor substrate, element isolation regions formed between the plurality of photoelectric conversion regions arranged in a matrix shape, and shielding members formed on upper surfaces of the element isolation regions. The element isolation regions have high impurity concentration regions of a high impurity concentration connected to at least a part of the shielding members.
Abstract:
There is provided a solid-state imaging apparatus including a plurality of photoelectric conversion regions which photoelectrically convert light incident from a rear surface side of a semiconductor substrate, element isolation regions formed between the plurality of photoelectric conversion regions arranged in a matrix shape, and shielding members formed on upper surfaces of the element isolation regions. The element isolation regions have high impurity concentration regions of a high impurity concentration connected to at least a part of the shielding members.
Abstract:
A circuit includes first and second capacitances arranged on a first path that connects first and second terminals; a first switch arranged between the first capacitance and the second capacitance; a second switch arranged on a second path that connects a reference voltage section and a first node formed between the first capacitance and the first switch; a third switch arranged on a third path that connects the section and a second node formed between the second capacitance and the first switch; a first resistance arranged on a fourth path that connects the first node and a third node formed between the first terminal and the first capacitance; a second resistance arranged on a fifth path that connects the second node and a fourth node formed between the second terminal and the second capacitance; a fourth switch on the fourth path; and a fifth switch on the fifth path.
Abstract:
A circuit includes first and second capacitances arranged on a first path that connects first and second terminals; a first switch arranged between the first capacitance and the second capacitance; a second switch arranged on a second path that connects a reference voltage section and a first node formed between the first capacitance and the first switch; a third switch arranged on a third path that connects the section and a second node formed between the second capacitance and the first switch; a first resistance arranged on a fourth path that connects the first node and a third node formed between the first terminal and the first capacitance; a second resistance arranged on a fifth path that connects the second node and a fourth node formed between the second terminal and the second capacitance; a fourth switch on the fourth path; and a fifth switch on the fifth path.