公开(公告)号：US20240006844A1

公开(公告)日：2024-01-04

申请号：US18251330

申请日：2021-11-22

申请人： Nippon Telegraph and Telephone Corporation

发明人： Tatsuro Hiraki ,  Shinji Matsuo ,  Takuma Aihara

IPC分类号： H01S5/026 ,  H01S5/343

CPC分类号： H01S5/0265 ,  H01S5/34313 ,  H01S5/34346 ,  H01S5/0268

摘要： A semiconductor photonic device includes a first cladding layer formed on a substrate formed with Si, a semiconductor layer formed on the first cladding layer, and a second cladding layer formed on the semiconductor layer. In the semiconductor layer, an active layer, and a p-type layer and an n-type layer disposed in contact with the active layer while sandwiching the active layer in a planar view are formed. A p-type electrode is electrically connected to the p-type layer, and an n-type electrode is electrically connected to the n-type layer. The active layer is formed in a core shape extending in a predetermined direction. This semiconductor photonic device also includes an optical coupling layer that is buried in the first cladding layer in such a manner as to be optically coupled to the active layer, and is formed in a core shape extending along the active layer.

公开(公告)号：US11747659B2

公开(公告)日：2023-09-05

申请号：US16971523

申请日：2019-02-08

申请人： Nippon Telegraph and Telephone Corporation

发明人： Tatsurou Hiraki ,  Takaaki Kakitsuka ,  Shinji Matsuo

IPC分类号： G02F1/025

CPC分类号： G02F1/025 ,  G02F2201/063

摘要： The optical modulator includes a lower cladding layer formed on a substrate, a core formed on the lower cladding layer, and an upper cladding layer formed on the core. The core is made of an InP-based semiconductor having a bandgap corresponding to a desired wavelength. Refractive indexes of the lower cladding layer and upper cladding layer are equal to or less than a refractive index of InP.

公开(公告)号：US20230122118A1

公开(公告)日：2023-04-20

申请号：US17911714

申请日：2020-03-23

申请人： Nippon Telegraph and Telephone Corporation

发明人： Takuma Tsurugaya ,  Shinji Matsuo ,  Koji Takeda ,  Takuro Fujii

IPC分类号： H01S5/11 ,  H01S5/0625 ,  H01S5/065

摘要： An optical device includes a first reflecting section, a second reflecting section, and a confining section. The first reflecting section is constituted of a thin-wire waveguide-type one-dimensional photonic crystal. The second reflecting section is constituted of a thin-wire waveguide-type one-dimensional photonic crystal of which a lattice constant differs from that of the first reflecting section. The confining section is sandwiched between the first reflecting section and the second reflecting section. A Fabry-Perot optical resonator is constituted by the first reflecting section, the confining section, and the second reflecting section.

公开(公告)号：US20230021415A1

公开(公告)日：2023-01-26

申请号：US17787808

申请日：2020-01-17

申请人： Nippon Telegraph and Telephone Corporation

发明人： Takuro Fujii ,  Takuma Tsurugaya ,  Tomonari Sato ,  Shinji Matsuo

IPC分类号： H01S5/227 ,  H01S5/22

摘要： A first burying layer burying a side of a first ridge structure is formed by selective growth using a first selective growth mask and a third selective growth mask. The first burying layer is formed by regrowth from a surface of a second semiconductor layer on a side of the first ridge structure. At the same time, by selective growth using a second selective growth mask and a fourth selective growth mask, a second burying layer burying a side of a second ridge structure is formed. The second burying layer is formed by regrowth from a surface of a fourth semiconductor layer on a side of the second ridge structure.

公开(公告)号：US20220320831A1

公开(公告)日：2022-10-06

申请号：US17615909

申请日：2019-06-03

申请人： Nippon Telegraph and Telephone Corporation

发明人： Takuma Tsurugaya ,  Takuro Fujii ,  Takaaki Kakitsuka ,  Shinji Matsuo

IPC分类号： H01S5/32 ,  H01S5/042

摘要： An active region formed on a substrate, and a p-type region and an n-type region formed so as to sandwich the active region are provided. The p-type region and the n-type region are formed so as to sandwich the active region. Both edges of a first side being a side of the p-type region and facing a first side surface of the active region are rounded in a direction separating from the active region. Also, both edges of a second side being a side of the n-type region and facing a second side surface of the active region are rounded in a direction separating from the active region.

公开(公告)号：US20220216673A1

公开(公告)日：2022-07-07

申请号：US17605504

申请日：2019-05-16

申请人： Nippon Telegraph and Telephone Corporation

发明人： Erina Kanno ,  Koji Takeda ,  Takaaki Kakitsuka ,  Shinji Matsuo

IPC分类号： H01S5/125 ,  H01S5/12

摘要： A length L1 of a first distributed Bragg reflector in a waveguide direction, a length L2 of a distributed feedback active region in the waveguide direction, a length L3 of a second distributed Bragg reflector in the waveguide direction, and a position xps of a phase shift portion are set to satisfy correlations of xps=L1+L2×α, L2(1−α)+L3>xps, and 0.5

公开(公告)号：US20220206235A1

公开(公告)日：2022-06-30

申请号：US17612505

申请日：2019-05-28

申请人： Nippon Telegraph and Telephone Corporation

发明人： Hidetaka Nishi ,  Shinji Matsuo

IPC分类号： G02B6/43 ,  H01L31/108 ,  G02B6/42

摘要： An optical device includes a core formed on a substrate, a first source electrode and a second source electrode formed in contact with both side surfaces of the core interposed between the first source electrode and the second source electrode, and a drain electrode formed in contact with an upper surface of the core. The core, the first source electrode, and the second source electrode together form a plasmonic waveguide. The first source electrode and the second source electrode are Schottky coupled to the core.

公开(公告)号：US11276988B2

公开(公告)日：2022-03-15

申请号：US16614179

申请日：2018-05-15

申请人： Nippon Telegraph and Telephone Corporation

发明人： Ryo Nakao ,  Takaaki Kakitsuka ,  Shinji Matsuo

IPC分类号： H01S5/22 ,  H01S5/042

摘要： A semiconductor optical device that achieves both of heat dissipation and light confinement and permits efficient current injection or application of an electric field is implemented. The semiconductor optical device includes: a core layer including an active region (1) made of a compound semiconductor; two cladding layers (5, 6) injecting current into the core layer; and a third cladding layer (4) made of a material having a larger thermal conductivity, a smaller refractive index, and a larger band gap than a material for any of the core layer and the two cladding layers.

公开(公告)号：US20220029385A1

公开(公告)日：2022-01-27

申请号：US17311759

申请日：2019-12-02

申请人： Nippon Telegraph and Telephone Corporation

发明人： Erina Kanno ,  Koji Takeda ,  Takaaki Kakitsuka ,  Shinji Matsuo

IPC分类号： H01S5/125

摘要： A semiconductor laser includes an active region, a first distributed-Bragg-reflector region disposed contiguously with the active region, and a second distributed-Bragg-reflector region. The first distributed-Bragg-reflector region is formed contiguously with one side of the active region in a waveguide direction and includes a first diffraction grating. The second distributed-Bragg-reflector region is formed contiguously with to the other side of the active region in the waveguide direction and includes a second diffraction grating. The first diffraction grating includes recessed portions formed through a diffraction grating layer formed in the first distributed-Bragg-reflector region and convex portions adjacent to the recessed portions. The diffraction grating layer is made of a dielectric material.

公开(公告)号：US20210203125A1

公开(公告)日：2021-07-01

申请号：US17058007

申请日：2019-03-15

申请人： Nippon Telegraph and Telephone Corporation

发明人： Suguru Yamaoka ,  Ryo Nakao ,  Takaaki Kakitsuka ,  Shinji Matsuo

IPC分类号： H01S5/026 ,  H01S5/10

摘要： A semiconductor optical module includes a semiconductor laser element region having an active layer, a first cladding layer which is formed such that the active layer is embedded therein, a second cladding layer which is formed underneath the active layer and the first cladding layer, and a heater unit which produces a temperature change in a waveguide; an optical waveguide element region including a spot-size converter which converts a spot size of incident laser light, and an optical waveguide core layer which is formed such that the spot-size converter is embedded therein, the first cladding layer contains InP, the second cladding layer is made of a material lower in refractive index and higher in thermal conductivity than the first cladding layer, and a third cladding layer which is made of a material lower in refractive index and lower in thermal conductivity than the second cladding layer is formed underneath the spot-size converter and the heater unit.