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71 条记录 (耗时 0.028 秒)

    Chemically amplified resist
    41.
    发明授权
    Chemically amplified resist 失效
    化学放大抗蚀剂

    公开(公告)号：US06251558B1

    公开(公告)日：2001-06-26

    申请号：US09065010

    申请日：1998-04-23

    申请人： Klaus Elian ,  Rainer Leuschner ,  Ewald Guenther

    发明人： Klaus Elian ,  Rainer Leuschner ,  Ewald Guenther

    IPC分类号： G06F7004

    CPC分类号： G03F7/0045 ,  G03F7/039 ,  Y10S430/111 ,  Y10S430/116 ,  Y10S430/127

    摘要： A chemically amplified resist contains the following components: a polymer with carboxylic acid anhydride groups and tert-butylester, tert-butoxycarbonyloxy, tetrahydrofuranyl, or tetrahydropyranyl groups; a photoreactive compound which, when exposed or electron-irradiated, releases a sulfonic acid having a pKa value>0.5 (acid former); a compound that can enter into a reversible chemical reaction with the sulfonic acid (buffer compound); and a solvent.

    摘要翻译： 化学增幅抗蚀剂包含以下组分：具有羧酸酐基团的聚合物和叔丁基酯，叔丁氧羰基氧基，四氢呋喃基或四氢吡喃基;光反应性化合物，当暴露或电子辐照时，释放具有pKa 值> 0.5（酸成分）;可与磺酸（缓冲剂化合物）进行可逆化学反应的化合物; 和溶剂。

    Chemically amplified resist
    42.
    发明授权
    Chemically amplified resist 有权
    化学放大抗蚀剂

    公开(公告)号：US06171755B2

    公开(公告)日：2001-01-09

    申请号：US09201728

    申请日：1998-11-30

    申请人： Klaus Elian ,  Ewald G{umlaut over (u)}nther ,  Rainer Leuschner

    发明人： Klaus Elian ,  Ewald G{umlaut over (u)}nther ,  Rainer Leuschner

    IPC分类号： G03F7004

    CPC分类号： G03F7/0045 ,  G03F7/0758 ,  G03F7/405 ,  Y10S430/127

    摘要： A chemically amplified resist for electron beam lithography contains the following components: a polymer with dissolution-inhibiting groups that can be cleaved with acid catalysis, a photo-reactive compound, which upon electron irradiation releases a sulfonic acid with a pKa value ≦2.5 (photo acid generator), an electron-beam-sensitive sensitizer enhancing the exposure sensitivity of the resist, such as a fluorene derivative, and a solvent.

    摘要翻译： 用于电子束光刻的化学放大抗蚀剂包含以下组分：具有可用酸催化裂解的溶解抑制基团的聚合物，光电反应性化合物，其在电子照射下释放pKa值<= 2.5的磺酸（ 光产酸剂），增强抗蚀剂如芴衍生物和溶剂的曝光灵敏度的电子束敏感敏化剂。

    Reaction chamber arrangement and a method for forming a reaction chamber arrangement
    43.
    发明授权
    Reaction chamber arrangement and a method for forming a reaction chamber arrangement 有权
    反应室装置和形成反应室装置的方法

    公开(公告)号：US09257724B2

    公开(公告)日：2016-02-09

    申请号：US13336023

    申请日：2011-12-23

    申请人： Klaus Elian

    发明人： Klaus Elian

    IPC分类号： H01M10/42 ,  H01M10/48

    CPC分类号： H01M10/42 ,  H01M10/48 ,  Y10T29/49002 ,  Y10T29/49826

    摘要： A reaction chamber arrangement is provided, the reaction chamber arrangement including a first chemical reaction chamber; a second chemical reaction chamber; an isolation member between the first chemical reaction chamber and the second chemical reaction chamber, wherein a first electrode is mounted on a first side of the isolation member, an exposed surface of the first electrode facing into the first chemical reaction chamber and wherein a second electrode is mounted on a second side of the isolation member, an exposed surface of the second electrode facing into the second chemical reaction chamber; and an electronic component configured to measure or control at least one of the first chemical reaction chamber and the second chemical reaction chamber, wherein the electronic component is arranged between and connected to the first electrode and the second electrode, and at least partially surrounded by an isolation material of the isolation member.

    摘要翻译： 提供反应室装置，反应室装置包括第一化学反应室; 第二化学反应室; 第一化学反应室和第二化学反应室之间的隔离构件，其中第一电极安装在隔离构件的第一侧上，第一电极的暴露表面朝向第一化学反应室，并且其中第二电极 安装在所述隔离构件的第二侧上，所述第二电极的暴露表面面向所述第二化学反应室; 以及电子部件，被配置为测量或控制所述第一化学反应室和所述第二化学反应室中的至少一个，其中所述电子部件布置在所述第一电极和所述第二化学反应室之间并且连接到所述第一电极和所述第二电极，并且至少部分地被 隔离构件的隔离材料。

    Resist for electron beam lithography and a process for producing photomasks using electron beam lithography
    49.
    发明授权
    Resist for electron beam lithography and a process for producing photomasks using electron beam lithography 有权
    电子束光刻的抗蚀剂和使用电子束光刻制造光掩模的方法

    公开(公告)号：US07220531B2

    公开(公告)日：2007-05-22

    申请号：US10376904

    申请日：2003-02-28

    申请人： Klaus Elian ,  Michael Sebald

    发明人： Klaus Elian ,  Michael Sebald

    IPC分类号： G03F7/004 ,  G03F7/20 ,  G03F7/40

    CPC分类号： G03F7/405 ,  G03F1/78 ,  Y10S430/143

    摘要： The invention relates to a resist for electron beam lithography and to a process for producing photomasks for optical lithography. The inventive resist includes repeating units that are derived from maleic anhydride and that can act as an anchor group for the subsequent binding of silicon-containing groups. The etch stability of the resist can thus be subsequently increased so that there is no dimensional loss on transfer of the resist structure to a chromium layer arranged under the resist.

    摘要翻译： 本发明涉及一种用于电子束光刻的抗蚀剂以及用于制造光刻光掩模的方法。 本发明的抗蚀剂包括衍生自马来酸酐的重复单元，并且可以充当用于随后结合含硅基团的锚定基团。 因此可以随后增加抗蚀剂的蚀刻稳定性，使得在将抗蚀剂结构转移到布置在抗蚀剂下方的铬层中时，没有尺寸损失。

    Photosensitive coating for enhancing a contrast of a photolithographic exposure
    50.
    发明申请
    Photosensitive coating for enhancing a contrast of a photolithographic exposure 审中-公开
    用于增强光刻曝光对比度的感光涂层

    公开(公告)号：US20070092829A1

    公开(公告)日：2007-04-26

    申请号：US11256677

    申请日：2005-10-21

    申请人： Christoph Noelscher ,  Klaus Elian

    发明人： Christoph Noelscher ,  Klaus Elian

    IPC分类号： G03C1/00

    CPC分类号： G03F7/40 ,  G03F7/0035 ,  G03F7/091 ,  G03F7/094

    摘要： A photosensitive coating material for enhancing a contrast of a photolithographic exposure of a resist film formed on a substrate, including a base polymer, a solvent for facilitating deposition of the photosensitive coating material upon a surface adjacent to said resist film to form a film thereupon, an alkaline additive suited to diffuse into the adjacent resist for reducing or neutralizing an acid concentration formed locally therein, a photoactive component arranged to reduce or neutralize a concentration of the alkaline additives in portions of the photosensitive coating, which are exposed with optical light, UV- or X-ray radiation, electrons, charged particles, ion projection lithography.

    摘要翻译： 一种用于增强形成在包括基础聚合物的基底上的抗蚀剂膜的光刻曝光的对比度的感光涂层材料，用于便于将感光涂层材料沉积在与所述抗蚀剂膜相邻的表面上形成膜的溶剂， 适合于扩散到相邻抗蚀剂中以减少或中和其中局部形成的酸浓度的碱性添加剂，被配置为减少或中和在光敏部分曝光的部分感光性涂层中的碱性添加剂的浓度的光活性成分，UV - 或X射线辐射，电子，带电粒子，离子投影光刻。