公开(公告)号：US07085676B2

公开(公告)日：2006-08-01

申请号：US10801023

申请日：2004-03-15

Applicant: Jon Opsal ,  Youxian Wen

Inventor： Jon Opsal ,  Youxian Wen

IPC: G06F11/30 ,  G01B11/02

CPC classification number: G03F7/70625

Abstract: Feed forward techniques can be used to improve optical metrology measurements for microelectronic devices. Metrology tools can be used to measure parameters such as critical dimension, profile, index of refraction, and thickness, as well as various material properties. Three-dimensional feature characterizations can be performed, from which parameters can be extracted and correlations executed. Process fingerprints on a wafer can be tracked after each process step, such that correlation between profile and structure parameters can be established and deviations from specification can be detected instantaneously. A “feed forward” approach allows information relating to dimensions, profiles, and layer thicknesses to be passed on to subsequent process steps. By retaining information from previous process steps, calculations such as profile determinations can be simplified by reducing the number of variables and degrees of freedom used in the calculation.

Abstract translation: 前馈技术可用于改进微电子器件的光学测量测量。 计量工具可用于测量临界尺寸，型材，折射率和厚度等参数，以及各种材料性能。 可以执行三维特征表征，从中可以提取参数并执行相关性。 可以在每个处理步骤之后跟踪晶片上的处理指纹，使得可以建立轮廓和结构参数之间的相关性并且可以立即检测到与规格的偏差。 “前馈”方法允许将与尺寸，型材和层厚度相关的信息传递到后续的工艺步骤。 通过保留先前工艺步骤的信息，可以通过减少在计算中使用的变量数量和自由度来简化诸如简档确定之类的计算。

公开(公告)号：US20060166385A1

公开(公告)日：2006-07-27

申请号：US11334962

申请日：2006-01-19

Applicant: Alex Salnik ,  Lena Nicolaides ,  Jon Opsal ,  Mira Bakshi

Inventor： Alex Salnik ,  Lena Nicolaides ,  Jon Opsal ,  Mira Bakshi

IPC: H01L21/66 ,  G01R31/26

CPC classification number: G01N21/1717 ,  G01N2021/1725 ,  G01R31/2648 ,  G01R31/2656

Abstract: A method is disclosed for determining peak carrier concentration in ultra shallow junctions of semiconductor samples. A region of the surface of the sample is periodically excited. The effects of the excitation are monitored by a probe beam. Synchronous detection produces in-phase (I) and quadrature (Q) signals. These signals are compared to signals obtained from calibration samples to evaluate peak carrier concentration.

Abstract translation: 公开了一种用于确定半导体样品的超浅结中峰值载流子浓度的方法。 样品表面的周期性地被激发。 激发的影响由探测光束监测。 同步检测产生同相（I）和正交（Q）信号。 将这些信号与从校准样品获得的信号进行比较，以评估峰值载流子浓度。

公开(公告)号：US07038850B2

公开(公告)日：2006-05-02

申请号：US11030735

申请日：2005-01-06

Applicant: Yia Chung Chang ,  Hanyou Chu ,  Jon Opsal

Inventor： Yia Chung Chang ,  Hanyou Chu ,  Jon Opsal

IPC: G01B11/00

CPC classification number: G01N21/4788

Abstract: A method for modeling optical scattering includes an initial step of defining a zero-th order structure (an idealized representation) for a subject including a perturbation domain and a background material. A Green's function and a zero-th order wave function are obtained for the zero-th order structure using rigorous coupled wave analysis (RCWA). A Lippmann-Schwinger equation is constructed including the Green's function, zero-th order wave function and a perturbation function. The Lippmann-Schwinger equation is then evaluated over a selected set of mesh points within the perturbation domain. The resulting linear equations are solved to compute one or more reflection coefficients for the subject.

Abstract translation: 一种用于模拟光学散射的方法包括为包括扰动域和背景材料的对象定义零级结构（理想化表示）的初始步骤。 使用严格的耦合波分析（RCWA）为零阶结构获得了绿色函数和零阶波函数。 构建了包括绿色函数，零阶波函数和扰动函数的Lippmann-Schwinger方程。 然后在扰动域内的选定的一组网格点上评估Lippmann-Schwinger方程。 求出所得到的线性方程，以计算被摄体的一个或多个反射系数。

公开(公告)号：US20060012803A1

公开(公告)日：2006-01-19

申请号：US11231638

申请日：2005-09-21

Applicant: Jon Opsal ,  Allan Rosencwaig

Inventor： Jon Opsal ,  Allan Rosencwaig

IPC: G01B11/14

CPC classification number: G01B11/024 ,  G01B11/02 ,  G01B11/14 ,  G03F7/70625

Abstract: A method and apparatus are disclosed for evaluating relatively small periodic structures formed on semiconductor samples. In this approach, a light source generates a probe beam which is directed to the sample. In one preferred embodiment, an incoherent light source is used. A lens is used to focus the probe beam on the sample in a manner so that rays within the probe beam create a spread of angles of incidence. The size of the probe beam spot on the sample is larger than the spacing between the features of the periodic structure so some of the light is scattered from the structure. A detector is provided for monitoring the reflected and scattered light. The detector includes multiple detector elements arranged so that multiple output signals are generated simultaneously and correspond to multiple angles of incidence. The output signals are supplied to a processor which analyzes the signals according to a scattering model which permits evaluation of the geometry of the periodic structure. In one embodiment, the sample is scanned with respect to the probe beam and output signals are generated as a function of position of the probe beam spot.

公开(公告)号：US06972852B2

公开(公告)日：2005-12-06

申请号：US10973703

申请日：2004-10-26

Applicant: Jon Opsal ,  Allan Rosencwaig

Inventor： Jon Opsal ,  Allan Rosencwaig

IPC: G01B11/02 ,  G01B11/14

CPC classification number: G01B11/024 ,  G01B11/02 ,  G01B11/14 ,  G03F7/70625

Abstract: A method and apparatus are disclosed for evaluating relatively small periodic structures formed on semiconductor samples. In this approach, a light source generates a probe beam which is directed to the sample. In one preferred embodiment, an incoherent light source is used. A lens is used to focus the probe beam on the sample in a manner so that rays within the probe beam create a spread of angles of incidence. The size of the probe beam spot on the sample is larger than the spacing between the features of the periodic structure so some of the light is scattered from the structure. A detector is provided for monitoring the reflected and scattered light. The detector includes multiple detector elements arranged so that multiple output signals are generated simultaneously and correspond to multiple angles of incidence. The output signals are supplied to a processor which analyzes the signals according to a scattering model which permits evaluation of the geometry of the periodic structure. In one embodiment, the sample is scanned with respect to the probe beam and output signals are generated as a function of position of the probe beam spot.

Abstract translation: 公开了一种用于评估在半导体样品上形成的相对小的周期性结构的方法和装置。 在这种方法中，光源产生指向样品的探针束。 在一个优选实施例中，使用非相干光源。 使用透镜将探针束聚焦在样品上，使得探针束内的射线产生入射角的扩展。 样品上的探针光斑的尺寸大于周期结构特征之间的间距，所以一些光从结构散射。 提供了一种用于监测反射和散射光的检测器。 检测器包括多个检测器元件，其布置成使得多个输出信号同时产生并对应于多个入射角。 输出信号被提供给处理器，该处理器根据允许评估周期性结构的几何形状的散射模型分析信号。 在一个实施例中，相对于探测光束扫描样品，并且根据探针束斑的位置产生输出信号。

公开(公告)号：US06963401B2

公开(公告)日：2005-11-08

申请号：US10691132

申请日：2003-10-22

Applicant: Jon Opsal ,  Minna Hovinen

Inventor： Jon Opsal ,  Minna Hovinen

IPC: G01N21/17 ,  G01N21/21 ,  G01J4/00

CPC classification number: G01N21/1717 ,  G01N21/211

Abstract: A combination metrology tool is disclosed which is capable of obtaining both thermal wave and optical spectroscopy measurements on a semiconductor wafer. In a preferred embodiment, the principal combination includes a thermal wave measurement and a spectroscopic ellipsometric measurement. These measurements are used to characterize ion implantation processes in semiconductors over a large dosage range.

Abstract translation: 公开了一种能够在半导体晶片上获得热波和光谱测量的组合计量工具。 在优选实施例中，主要组合包括热波测量和光谱椭偏测量。 这些测量用于表征在大剂量范围内的半导体中的离子注入过程。

公开(公告)号：US06922244B2

公开(公告)日：2005-07-26

申请号：US10864233

申请日：2004-06-09

Applicant: Allan Rosencwaig ,  Jon Opsal

Inventor： Allan Rosencwaig ,  Jon Opsal

IPC: G01B11/06 ,  G01J4/00

CPC classification number: G01B11/0641

Abstract: An optical measurement system, including a reference ellipsometer and a non-contact optical measurement device, evaluates a sample having at least a partially known composition. The reference ellipsometer includes a light generator to generate a beam of quasi-monochromatic light of known wavelength and polarization, directed at a non-normal angle of incidence to interact with the sample. An analyzer creates interference between S and P polarized components of the reflected beam, the intensity of which is measured by a detector. A processor determines the polarization state using the detected intensity, and determines an optical property of the sample based upon the determined polarization state, the known wavelength, and the composition. The processor calibrates the optical measurement device, used to measure an optical parameter of the sample, by comparing the measured optical parameter from the optical measurement device to the determined optical property from the reference ellipsometer.

Abstract translation: 包括参考椭偏仪和非接触光学测量装置的光学测量系统评估具有至少部分已知组成的样品。 参考椭偏仪包括光发生器，用于产生已知波长和偏振的准单色光束，指向非正常入射角与样品相互作用。 分析仪产生反射光束的S和P偏振分量之间的干涉，其强度由检测器测量。 处理器使用检测到的强度来确定偏振状态，并且基于所确定的偏振状态，已知波长和组成来确定样本的光学特性。 处理器通过将来自光学测量装置的测量光学参数与来自参考椭偏仪的所确定的光学特性进行比较来校准用于测量样品的光学参数的光学测量装置。

公开(公告)号：US20050137809A1

公开(公告)日：2005-06-23

申请号：US11030735

申请日：2005-01-06

Applicant: Yia Chang ,  Hanyou Chu ,  Jon Opsal

Inventor： Yia Chang ,  Hanyou Chu ,  Jon Opsal

IPC: G01B11/00 ,  G01N21/47 ,  G01N31/00

CPC classification number: G01N21/4788

Abstract: A method for modeling optical scattering includes an initial step of defining a zero-th order structure (an idealized representation) for a subject including a perturbation domain and a background material. A Green's function and a zero-th order wave function are obtained for the zero-th order structure using rigorous coupled wave analysis (RCWA). A Lippmann-Schwinger equation is constructed including the Green's function, zero-th order wave function and a perturbation function. The Lippmann-Schwinger equation is then evaluated over a selected set of mesh points within the perturbation domain. The resulting linear equations are solved to compute one or more reflection coefficients for the subject.

Abstract translation: 一种用于模拟光学散射的方法包括为包括扰动域和背景材料的对象定义零级结构（理想化表示）的初始步骤。 使用严格的耦合波分析（RCWA）为零阶结构获得了绿色函数和零阶波函数。 构建了包括绿色函数，零阶波函数和扰动函数的Lippmann-Schwinger方程。 然后在扰动域内的选定的一组网格点上评估Lippmann-Schwinger方程。 求出所得到的线性方程，以计算被摄体的一个或多个反射系数。

公开(公告)号：US06894781B2

公开(公告)日：2005-05-17

申请号：US10430510

申请日：2003-05-06

Applicant: Lanhua Wei ,  Jon Opsal ,  Allan Rosencwaig

Inventor： Lanhua Wei ,  Jon Opsal ,  Allan Rosencwaig

IPC: G01B11/06 ,  G01K11/12 ,  G01N21/21 ,  G01J4/00

CPC classification number: G01K11/12 ,  G01B11/065 ,  G01N21/211

Abstract: A method and apparatus are disclosed for accurately and repeatably determining the thickness of a thin film on a substrate. A rotating compensator ellipsometer is used which generates both 2ω and 4ω output signals. The 4ω omega signal is used to provide an indication of the temperature of the sample. This information is used to correct the analysis of the thin film based on the 2ω signal. These two different signals generated by a single device provide independent measurements of temperature and thickness and can be used to accurately analyze a sample whose temperature is unknown.

Abstract translation: 公开了用于精确地和可重复地确定衬底上的薄膜的厚度的方法和装置。 使用旋转补偿器椭偏仪，其产生2omega和4omega输出信号。 4omega欧米茄信号用于提供样品温度的指示。 该信息用于基于2omega信号来校正薄膜的分析。 由单个器件产生的这两个不同的信号提供温度和厚度的独立测量，并可用于准确分析温度未知的样品。

公开(公告)号：US06882424B2

公开(公告)日：2005-04-19

申请号：US10797163

申请日：2004-03-10

Applicant: Jon Opsal ,  Li Chen

Inventor： Jon Opsal ,  Li Chen

IPC: G01B11/06 ,  G01N21/17 ,  G01N21/21 ,  G01N21/27 ,  G01N21/00

CPC classification number: G01N21/211 ,  G01N21/1717

Abstract: An apparatus for characterizing multilayer samples is disclosed. An intensity modulated pump beam is focused onto the sample surface to periodically excite the sample. A probe beam is focused onto the sample surface within the periodically excited area. The power of the reflected probe beam is measured by a photodetector. The output of the photodetector is filtered and processed to derive the modulated optical reflectivity of the sample. Measurements are taken at a plurality of pump beam modulation frequencies. In addition, measurements are taken as the lateral separation between the pump and probe beam spots on the sample surface is varied. The measurements at multiple modulation frequencies and at different lateral beam spot spacings are used to help characterize complex multilayer samples. In the preferred embodiment, a spectrometer is also included to provide additional data for characterizing the sample.

Abstract translation: 公开了一种用于表征多层样品的装置。 将强度调制的泵浦光束聚焦到样品表面上以周期性地激发样品。 探针光束聚焦在周期性激发区域内的样品表面上。 反射探测光束的光束由光电检测器测量。 对光电检测器的输出进行滤波和处理，以得出样品的调制光学反射率。 在多个泵浦光束调制频率下进行测量。 此外，测量取决于泵和探针之间的横向分离，样品表面上的光斑变化。 使用多个调制频率和不同横向光斑间距的测量来帮助表征复杂的多层样品。 在优选实施例中，还包括光谱仪以提供用于表征样品的附加数据。