Invention Grant
- Patent Title: Feed forward critical dimension control
- Patent Title (中): 前馈关键维度控制
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Application No.: US10801023Application Date: 2004-03-15
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Publication No.: US07085676B2Publication Date: 2006-08-01
- Inventor: Jon Opsal , Youxian Wen
- Applicant: Jon Opsal , Youxian Wen
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Stallman & Pollock LLP
- Main IPC: G06F11/30
- IPC: G06F11/30 ; G01B11/02

Abstract:
Feed forward techniques can be used to improve optical metrology measurements for microelectronic devices. Metrology tools can be used to measure parameters such as critical dimension, profile, index of refraction, and thickness, as well as various material properties. Three-dimensional feature characterizations can be performed, from which parameters can be extracted and correlations executed. Process fingerprints on a wafer can be tracked after each process step, such that correlation between profile and structure parameters can be established and deviations from specification can be detected instantaneously. A “feed forward” approach allows information relating to dimensions, profiles, and layer thicknesses to be passed on to subsequent process steps. By retaining information from previous process steps, calculations such as profile determinations can be simplified by reducing the number of variables and degrees of freedom used in the calculation.
Public/Granted literature
- US20040267490A1 Feed forward critical dimension control Public/Granted day:2004-12-30
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