公开(公告)号：US20110154580A1

公开(公告)日：2011-06-30

申请号：US12977148

申请日：2010-12-23

Applicant: Changoh KIM ,  Jaehyun KIM ,  Jaewon CHANG ,  Jongmin LEE ,  Sangheon LEE ,  Youngho KIM

Inventor： Changoh KIM ,  Jaehyun KIM ,  Jaewon CHANG ,  Jongmin LEE ,  Sangheon LEE ,  Youngho KIM

IPC: D06L1/20 ,  D06B1/00

CPC classification number: D06F35/005 ,  D06F1/00 ,  D06F33/02 ,  D06F39/088

Abstract: Provided are a washing method and washing machine. In the washing method, an eco-rinsing process where a drum rotates in a state where at least a portion of laundry is pressed against the inner wall of the drum and wash water is sprayed into the drum is performed. A spinning process where the spraying of the wash water is stopped and the wash water is removed from the laundry by accelerating the drum is performed. Here, at least a portion of the laundry remains pressed against the wall of the drum in the eco-rinsing process and the spinning process.

Abstract translation: 提供洗涤方法和洗衣机。 在洗涤方法中，进行滚筒在将洗涤物的至少一部分按压在滚筒的内壁上而洗涤水的状态下旋转的生态漂洗处理。 执行洗涤水的喷射停止并且通过加速滚筒从洗涤物去除洗涤水的纺丝工艺。 这里，至少一部分衣物在生态漂洗过程和纺丝过程中保持压靠滚筒的壁。

公开(公告)号：US20110146004A1

公开(公告)日：2011-06-23

申请号：US12976390

申请日：2010-12-22

Applicant: Changoh KIM ,  Jaehyun Kim ,  Jaewon Chang ,  Jongmin Lee ,  Sangheon Lee ,  Youngho Kim

Inventor： Changoh KIM ,  Jaehyun Kim ,  Jaewon Chang ,  Jongmin Lee ,  Sangheon Lee ,  Youngho Kim

IPC: D06L1/20 ,  D06F25/00

CPC classification number: D06F35/006 ,  D06F33/02 ,  D06F35/005 ,  D06F35/007 ,  D06F39/003 ,  D06F39/083 ,  D06F39/088

Abstract: Provided are a washing method and washing machine. In the washing method, an eco-rinsing process where a drum rotates in a state where at least a portion of laundry is pressed against the inner wall of the drum and wash water is sprayed into the drum is performed. A spinning process where the spraying of the wash water is stopped and the wash water is removed from the laundry by accelerating the drum is performed. Here, at least a portion of the laundry remains pressed against the wall of the drum in the eco-rinsing process and the spinning process.

公开(公告)号：US20110146003A1

公开(公告)日：2011-06-23

申请号：US12976376

申请日：2010-12-22

Applicant: Changoh KIM ,  Jaehyun KIM ,  Jaewon CHANG ,  Jongmin LEE ,  Sangheon LEE ,  Youngho KIM

Inventor： Changoh KIM ,  Jaehyun KIM ,  Jaewon CHANG ,  Jongmin LEE ,  Sangheon LEE ,  Youngho KIM

IPC: D06L1/20 ,  D06B1/00

CPC classification number: D06F35/006 ,  D06F33/02 ,  D06F35/005 ,  D06F35/007 ,  D06F39/003 ,  D06F39/083 ,  D06F39/088

Abstract: Provided are a washing method and washing machine. According to an aspect of the present invention, there is provided a washing method including: performing a balancing process where washing water is sprayed to a laundry loaded in the drum and the laundry is evenly distributed by repeatedly accelerating the drum, constantly maintaining a constant RPM of the drum, and reducing the RPM of the drum; and performing a laundry treating process where the drum rotates such that at least a portion of the laundry is pressed against an inner wall of the drum and the wash water is sprayed into the drum.

Abstract translation: 提供洗涤方法和洗衣机。 根据本发明的一个方面，提供了一种洗涤方法，包括：进行平衡处理，其中将洗涤水喷射到装在滚筒中的衣物上，衣物通过反复加速滚筒均匀分布，不断地保持恒定的RPM 的鼓，并减小滚筒的RPM; 并且进行衣物处理过程，其中滚筒旋转使得至少一部分衣物被压靠在滚筒的内壁上，并将洗涤水喷入滚筒中。

公开(公告)号：US20110099728A1

公开(公告)日：2011-05-05

申请号：US12917776

申请日：2010-11-02

Applicant: Wooyoung KIM ,  Youngho Kim ,  Jaehyun Kim ,  Moonhee Hong ,  Changoh Kim ,  Kyungchul Woo ,  Myonghun Im ,  Sangheon Lee ,  Jaewon Chang ,  Sooyoung Oh ,  Jongmin Lee

Inventor： Wooyoung KIM ,  Youngho Kim ,  Jaehyun Kim ,  Moonhee Hong ,  Changoh Kim ,  Kyungchul Woo ,  Myonghun Im ,  Sangheon Lee ,  Jaewon Chang ,  Sooyoung Oh ,  Jongmin Lee

IPC: D06L1/20 ,  D06B1/00

CPC classification number: D06F39/088 ,  D06F35/006 ,  D06F39/003 ,  D06F39/005 ,  D06F39/083

Abstract: Provided is a method for washing laundry in a washing machine, wherein the washing machine includes a tub and a drum disposed inside the tub, the method comprising: supplying wash water into the tub; rotating the drum such that the laundry is attached the drum and spraying the wash water changed to whirling water into the drum; and draining the wash water from the tub.

Abstract translation: 本发明提供一种在洗衣机中洗涤衣物的方法，其中洗衣机包括设置在桶内的桶和桶，该方法包括：将洗涤水供应到桶中; 使滚筒旋转，使衣物安装在滚筒上，并将洗涤水喷洒到旋转的水中进入滚筒; 并从洗衣桶中排出洗涤水。

公开(公告)号：US20100148317A1

公开(公告)日：2010-06-17

申请号：US12711420

申请日：2010-02-24

Applicant: Sangheon LEE ,  Dae-Han CHOI ,  Jisoo KIM ,  Peter CIRIGLIANO ,  Zhisong HUANG ,  Robert CHARATAN ,  S.M. Reza SADJADI

Inventor： Sangheon LEE ,  Dae-Han CHOI ,  Jisoo KIM ,  Peter CIRIGLIANO ,  Zhisong HUANG ,  Robert CHARATAN ,  S.M. Reza SADJADI

IPC: H01L29/30 ,  H01L21/768 ,  C23F1/08

CPC classification number: C23F4/00 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/76816 ,  Y10S438/947

Abstract: A method for forming a feature in an etch layer is provided. A photoresist layer is formed over the etch layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls. A control layer is formed over the photoresist layer and bottoms of the photoresist features. A conformal layer is deposited over the sidewalls of the photoresist features and control layer to reduce the critical dimensions of the photoresist features. Openings in the control layer are opened with a control layer breakthrough chemistry. Features are etched into the etch layer with an etch chemistry, which is different from the control layer break through chemistry, wherein the control layer is more etch resistant to the etch with the etch chemistry than the conformal layer.

Abstract translation: 提供了一种在蚀刻层中形成特征的方法。 在蚀刻层上形成光致抗蚀剂层。 图案化光致抗蚀剂层以形成具有光致抗蚀剂侧壁的光致抗蚀剂特征。 在光致抗蚀剂层和光致抗蚀剂特征的底部上形成控制层。 在光致抗蚀剂特征和控制层的侧壁上沉积保形层以减少光刻胶特征的临界尺寸。 控制层的开口打开，控制层突破性化学。 特征被蚀刻到蚀刻层中，其蚀刻化学性质不同于控制层突破性化学，其中控制层比蚀刻化学性质比共形层更耐蚀刻蚀刻。

公开(公告)号：US07560388B2

公开(公告)日：2009-07-14

申请号：US11291303

申请日：2005-11-30

Applicant: Jisoo Kim ,  Sangheon Lee ,  Daehan Choi ,  S. M. Reza Sadjadi

Inventor： Jisoo Kim ,  Sangheon Lee ,  Daehan Choi ,  S. M. Reza Sadjadi

IPC: H01L21/311

CPC classification number: H01L21/0338

Abstract: A method providing features in a dielectric layer is provided. A sacrificial layer is formed over the dielectric layer. A set of sacrificial layer features is etched into the sacrificial layer. A first set of dielectric layer features is etched into the dielectric layer through the sacrificial layer. The first set of dielectric layer features and the set of sacrificial layer features are filled with a filler material. The sacrificial layer is removed. The widths of the spaces between the parts of the filler material are shrunk with a shrink sidewall deposition. A second set of dielectric layer features is etched into the dielectric layer through the shrink sidewall deposition. The filler material and shrink sidewall deposition are removed.

Abstract translation: 提供了一种在电介质层中提供特征的方法。 在电介质层上形成牺牲层。 一组牺牲层特征被蚀刻到牺牲层中。 通过牺牲层将介电层特征的第一组蚀刻到介电层中。 第一组介电层特征和一组牺牲层特征用填充材料填充。 牺牲层被去除。 填充材料的各部分之间的间隙的宽度随收缩侧壁沉积而收缩。 通过收缩侧壁沉积将第二组介电层特征蚀刻到介电层中。 去除填充材料和收缩侧壁沉积。

公开(公告)号：US07294580B2

公开(公告)日：2007-11-13

申请号：US10860833

申请日：2004-06-03

Applicant: Seokmin Yun ,  Ji Zhu ,  Peter Cirigliano ,  Sangheon Lee ,  Thomas S. Choi ,  Peter Loewenhardt ,  Mark H. Wilcoxson ,  Reza Sadjadi ,  Eric A. Hudson ,  James V. Tietz

Inventor： Seokmin Yun ,  Ji Zhu ,  Peter Cirigliano ,  Sangheon Lee ,  Thomas S. Choi ,  Peter Loewenhardt ,  Mark H. Wilcoxson ,  Reza Sadjadi ,  Eric A. Hudson ,  James V. Tietz

IPC: H01L21/00

CPC classification number: H01L21/31116 ,  H01L21/31138 ,  H01L21/76802 ,  H01L21/76829

Abstract: A method for etching a feature in a low-k dielectric layer through a photoresist etch mask over a substrate. A gas-modulated cyclic stripping process is performed for more than three cycles for stripping a single photoresist mask. Each cycle of the gas-modulated cyclic stripping process comprises performing a protective layer formation phase and a stripping phase. The protective layer forming phase using first gas chemistry with a deposition gas chemistry, wherein the protective layer forming phase is performed in about 0.005 to 10 seconds for each cycle. The performing the stripping phase for stripping the photoresist mask using a second gas chemistry using a stripping gas chemistry, where the first gas chemistry is different than the second gas chemistry, wherein the etching phase is performed in about 0.005 to 10 seconds for each cycle.

Abstract translation: 一种通过光刻胶蚀刻掩模在衬底上蚀刻低k电介质层中的特征的方法。 执行气体调制的循环剥离工艺超过三个循环以剥离单个光致抗蚀剂掩模。 气体调节循环汽提过程的每个循环包括进行保护层形成阶段和汽提阶段。 使用具有沉积气化学性质的第一气体化学物质的保护层形成阶段，其中保护层形成阶段在每个循环中以约0.005至10秒钟进行。 使用第二种气体化学法，使用剥离气体化学法，其中第一种气体化学物质与第二种气体化学物质不同，进行汽提阶段以剥离光致抗蚀剂掩模，其中每个循环在约0.005至10秒内进行蚀刻阶段。

公开(公告)号：US20070123053A1

公开(公告)日：2007-05-31

申请号：US11291303

申请日：2005-11-30

Applicant: Jisoo Kim ,  Sangheon Lee ,  Daehan Choi ,  S.M. Sadjadi

Inventor： Jisoo Kim ,  Sangheon Lee ,  Daehan Choi ,  S.M. Sadjadi

IPC: H01L21/302

CPC classification number: H01L21/0338

Abstract: A method providing features in a dielectric layer is provided. A sacrificial layer is formed over the dielectric layer. A set of sacrificial layer features is etched into the sacrificial layer. A first set of dielectric layer features is etched into the dielectric layer through the sacrificial layer. The first set of dielectric layer features and the set of sacrificial layer features are filled with a filler material. The sacrificial layer is removed. The widths of the spaces between the parts of the filler material are shrunk with a shrink sidewall deposition. A second set of dielectric layer features is etched into the dielectric layer through the shrink sidewall deposition. The filler material and shrink sidewall deposition are removed.

Abstract translation: 提供了一种在电介质层中提供特征的方法。 在电介质层上形成牺牲层。 一组牺牲层特征被蚀刻到牺牲层中。 通过牺牲层将介电层特征的第一组蚀刻到介电层中。 第一组介电层特征和一组牺牲层特征用填充材料填充。 牺牲层被去除。 填充材料的各部分之间的间隙的宽度随收缩侧壁沉积而收缩。 通过收缩侧壁沉积将第二组介电层特征蚀刻到介电层中。 去除填充材料和收缩侧壁沉积。

公开(公告)号：US20070122977A1

公开(公告)日：2007-05-31

申请号：US11558238

申请日：2006-11-09

Applicant: Ji Kim ,  Sangheon Lee ,  Daehan Choi ,  S. Sadjadi

Inventor： Ji Kim ,  Sangheon Lee ,  Daehan Choi ,  S. Sadjadi

IPC: H01L21/336

CPC classification number: H01L21/0338 ,  H01L21/0337 ,  H01L21/31144

Abstract: A method for providing features in an etch layer with a memory region and a peripheral region is provided. A memory patterned mask is formed over a first sacrificial layer. A first set of sacrificial layer features is etched into the first sacrificial layer and a second sacrificial layer. Features of the first set of sacrificial layer features are filled with filler material. The first sacrificial layer is removed. The spaces are shrunk with a shrink sidewall deposition. A second set of sacrificial layer features is etched into the second sacrificial layer. The filler material and shrink sidewall deposition are removed. A peripheral patterned mask is formed over the memory region and peripheral region. The second sacrificial layer is etched through the peripheral patterned mask. The peripheral patterned mask is removed. Features are etched into the etch layer from the second sacrificial layer.

Abstract translation: 提供了一种用于在具有存储区域和周边区域的蚀刻层中提供特征的方法。 存储器图案化掩模形成在第一牺牲层上。 第一组牺牲层特征被蚀刻到第一牺牲层和第二牺牲层中。 第一组牺牲层特征的特征填充有填充材料。 第一牺牲层被去除。 这些空间随着收缩侧壁沉积而收缩。 第二组牺牲层特征被蚀刻到第二牺牲层中。 去除填充材料和收缩侧壁沉积。 在存储器区域和外围区域上形成周边图案化掩模。 通过外围图案化掩模蚀刻第二牺牲层。 去除周边图案掩模。 特征从第二牺牲层蚀刻到蚀刻层中。

公开(公告)号：US07192531B1

公开(公告)日：2007-03-20

申请号：US10603412

申请日：2003-06-24

Applicant: Sean S. Kang ,  Sangheon Lee ,  Wan-Lin Chen ,  Eric A. Hudson ,  Reza Sadjadi

Inventor： Sean S. Kang ,  Sangheon Lee ,  Wan-Lin Chen ,  Eric A. Hudson ,  Reza Sadjadi

IPC: H01L21/302

CPC classification number: H01L21/76808 ,  H01L21/31138

Abstract: A method for forming damascene features in a dielectric layer over a barrier layer over a substrate is provided. A plurality of vias are etched in the dielectric layer to the barrier layer with a plasma etching process in the plasma processing chamber. A patterned photoresist layer is formed with a trench pattern. Within a single plasma process chamber a combination via plug deposition to form plugs in the vias over the barrier layer and trench etch is provided.

Abstract translation: 提供了一种用于在衬底上的阻挡层上的介电层中形成镶嵌特征的方法。 在等离子体处理室中通过等离子体蚀刻工艺将多个通孔在电介质层中蚀刻到阻挡层。 形成具有沟槽图案的图案化的光致抗蚀剂层。 在单个等离子体处理室内，提供了通过插塞沉积的组合以在阻挡层上的通孔中形成插塞和沟槽蚀刻。