Abstract:
A manufacturing apparatus of a porous glass base material is provided. The manufacturing apparatus includes a burner repeatedly moving back and forth reciprocating in a direction along a longitudinal direction of an axis-rotating base member glass rod, where the burner ejects and deposits glass particles onto the base member glass rod, and an exhaust hood positioned above a porous glass soot formed by the deposition of the glass particles, where the exhaust hood repeatedly moves back and forth reciprocates in a same direction as the burner in synchronization with the burner. Here, the exhaust hood surrounds a portion of the porous glass soot corresponding to an angle θ of 100° or more with respect to an axial centera central axis of the porous glass soot. To be more specific, the angle θ may be preferably 180° or more.
Abstract:
There are provided a sintering method and a sintering apparatus of a porous glass base material for sintering a porous glass base material to be dehydrated and vitrified into a transparent glass without causing core displacement and cross-sectional shape deformation. In detail, an aspect of the present invention is a sintering method of a porous glass base material for sintering a rod-like porous glass base material by hanging and moving the rod-like porous glass base material though a heating furnace. Here, the porous glass base material is lowered into a heating furnace heated to a sintering temperature, and after every part of the porous glass base material is moved through a preheated region extending from an upper edge of an insulating member to an upper edge of a heater in a heating furnace body in 4.5 hours or longer, the porous glass base material is sintered by the heater to be vitrified into a transparent glass.
Abstract:
An input signal is encoded using a multicarrier code that provides a PEP reduction of 3k [dB] and a minimum distance dmin=√{square root over (2k)} d, by restricting the code so as to have one or more 2k+1-carrier kernels in which |Δθ(2k)−Δθ*(2k)|≡π (for any k) holds for the phase difference Δθ(2k) between a set of 2k−1 carriers and another set of 2k−1 carriers and the phase difference Δθ*(2k) between a set of 2k−1 carriers and another set of 2k−1 carriers, where k is an integer not smaller than 1. By setting k to 1, and by further providing the condition |Δθ(2k)−Δθ*(2k)|=π/2 between two kinds of 4-carrier kernels one equal in number to the other, a PEP reduction of 3.7 dB and dmin=√{square root over (2)} d can be achieved. By extending the code length using these two kinds of 4-carrier kernels as basic units, a PEP reduction of 3k+0.7 [dB] and dmin=√{square root over (2k)} d can be achieved.
Abstract:
A cover structure of a machine tool with a simple structure which improves work efficiency by minimizing an opening portion. An opening portion is defined in a reverse concave shape at one lateral side of a cover. The opening portion includes two tool passing portions and a turning permission portion connecting the tool passing portions. A tool T which is held by an exchange arm passes through each tool passing portion. On the other hand, a rotation base portion of the exchange arm passes through the turning permission portion. While each tool passing portion is closed by a door, the turning permission portion is closed by a closing cover including a turning cover and a slide cover.
Abstract:
A thin-film magnetic head where the closure is bonded with sufficiently high adhesive strength by the adhesive layer thinner than conventional and that is free from the problem of fine dusts, is provided. The head comprises: a substrate having an element-formed surface and an opposed-to-medium surface; at least one magnetic head element provided on/above the element-formed surface; an overcoat layer formed on the element-formed surface; an etching pattern formed on a part of an upper surface of the overcoat layer, the whole or a part of the etching pattern being filled up by adhesive; a closure provided on the etching pattern of the overcoat layer; and an opening portion formed close to an edge on the opposite side to the opposed-to-medium surface of an adhesive surface of the closure, being a portion exposed from the closure of the etching pattern.
Abstract:
In methods of fabricating a semiconductor device having multiple channel transistors and semiconductor devices fabricated thereby, the semiconductor device includes an isolation region disposed within a semiconductor substrate and defining a first region. A plurality of semiconductor pillars self-aligned with the first region and spaced apart from each other are disposed within the first region, and each of the semiconductor pillars has at least one recessed region therein. At least one gate structure may be disposed across the recessed regions, which crosses the semiconductor pillars and extends onto the isolation region.
Abstract:
The present invention has the purpose of providing optical fiber base material having an even ratio of core to clad in the longitudinal direction thereof and method of easily manufacturing the same. In the method of manufacturing the optical fiber base material using the outside vapor deposition (OVD) process, a burner is relatively reciprocated against and along an initial material and deposits glass fine particles on the initial material. In the above method, the relative reciprocation is stopped at the returning positions in a certain period, preferably, in no less than 3 seconds and no more than 60 seconds.
Abstract:
There is provided a common mode choke coil whose impedance value can be easily adjusted by changing the thickness of an insulation layer for impedance value adjustment appropriately. An insulation layer for impedance value adjustment is formed throughout a principal surface of a first magnetic substrate. Coil patterns and insulation layers are alternately formed on that layer. Parts of the insulation layers other than the insulation layer for impedance value adjustment are removed in either or both of a central region surrounded by the coil patterns and a region around the coil patterns. A resin including magnetic powder is provided on the uppermost insulation layer and the regions where the insulation layers have been removed, and a second magnetic substrate is bonded through a bonding layer.
Abstract:
In a semiconductor integrated circuit device having a system-on-chip structure in which a DRAM and a logic integrated circuit are mixedly mounted on a chip, a silicide layer is formed on the surfaces of the source and the drain of a MISFET of a direct peripheral circuit of the DRAM, the surfaces of the source and the drain of a MISFET of an indirect peripheral circuit of the DRAM, and the surfaces of the source and the drain of a MISFET of the logic integrated circuit, and the silicide layer is not formed on the surfaces of the source and the drain of a memory cell selective MISFET of the memory cell of the DRAM.
Abstract:
As a method of manufacturing an electron emitter having a pair of element electrodes formed on a substrate, a conductive film connected to both of the element electrodes, and an electron emission section formed in part of the conductive film, the method includes discharging a droplet of a function liquid containing a material for forming the conductive film onto a discharge surface of the substrate by a droplet device to adhere a liquid-state object to at least part of an area in which the conductive film is to be formed, drying the liquid-state object so as to make the liquid-state object become the conductive film, and forming an electron emission section in the conductive film by applying an current between the pair of element electrodes, wherein if accompanied by the drying to form the conduct film, the discharging the liquid-state object in a shape having a constricted part for forming a latent image section that has a relatively thin film thickness in a portion for forming the electron emitter.