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公开(公告)号：US20200321498A1
公开(公告)日：2020-10-08
申请号：US16801358
申请日：2020-02-26
摘要： In various embodiments, a rigid lens is attached to a light-emitting semiconductor die via a layer of encapsulant having a thickness insufficient to prevent propagation of thermal expansion mismatch-induced strain between the rigid lens and the semiconductor die.
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公开(公告)号：US10756234B2
公开(公告)日：2020-08-25
申请号：US15977031
申请日：2018-05-11
申请人： James R. Grandusky , Leo J. Schowalter , Craig Moe
发明人： James R. Grandusky , Leo J. Schowalter , Craig Moe
摘要： In various embodiments, extraction efficiency of light-emitting devices fabricated on aluminum nitride substrates is enhanced via removal of at least a portion of the substrate.
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43.发明授权公开(公告)号：US10700237B2
公开(公告)日：2020-06-30
申请号：US16239728
申请日：2019-01-04
申请人： Craig Moe , James R. Grandusky , Shawn R. Gibb , Leo J. Schowalter , Kosuke Sato , Tomohiro Morishita
发明人： Craig Moe , James R. Grandusky , Shawn R. Gibb , Leo J. Schowalter , Kosuke Sato , Tomohiro Morishita
IPC分类号： H01L33/06 , H01L33/32 , H01L33/14 , H01L33/46 , H01L33/00 , H01L33/02 , H01L33/36 , H01L33/40
摘要： In various embodiments, light-emitting devices incorporate graded layers with compositional offsets at one or both end points of the graded layer to promote formation of two-dimensional carrier gases and polarization doping, thereby enhancing device performance.
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44.发明申请公开(公告)号：US20190382919A1
公开(公告)日：2019-12-19
申请号：US16444147
申请日：2019-06-18
申请人： Robert T. BONDOKOV , James R. GRANDUSKY , Jianfeng CHEN , Shichao WANG , Toru KIMURA , Thomas MIEBACH , Keisuke YAMAOKA , Leo J. SCHOWALTER
发明人： Robert T. BONDOKOV , James R. GRANDUSKY , Jianfeng CHEN , Shichao WANG , Toru KIMURA , Thomas MIEBACH , Keisuke YAMAOKA , Leo J. SCHOWALTER
摘要： In various embodiments, single-crystal aluminum nitride boules and substrates have low Urbach energies and/or absorption coefficients at deep-ultraviolet wavelengths. The single-crystal aluminum nitride may function as a platform for the fabrication of light-emitting devices such as light-emitting diodes and lasers.
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45.发明申请公开(公告)号：US20190382916A1
公开(公告)日：2019-12-19
申请号：US16444148
申请日：2019-06-18
申请人： Robert T. BONDOKOV , James R. GRANDUSKY , Jianfeng CHEN , Shichao WANG , Toru KIMURA , Thomas MIEBACH , Keisuke YAMAOKA , Leo J. SCHOWALTER
发明人： Robert T. BONDOKOV , James R. GRANDUSKY , Jianfeng CHEN , Shichao WANG , Toru KIMURA , Thomas MIEBACH , Keisuke YAMAOKA , Leo J. SCHOWALTER
摘要： In various embodiments, single-crystal aluminum nitride boules and substrates are formed from the vapor phase with controlled levels of impurities such as carbon. Single-crystal aluminum nitride may be heat treated via quasi-isothermal annealing and controlled cooling to improve its ultraviolet absorption coefficient and/or Urbach energy.
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46.发明授权公开(公告)号：US10211368B2
公开(公告)日：2019-02-19
申请号：US15587879
申请日：2017-05-05
申请人： Craig Moe , James R. Grandusky , Shawn R. Gibb , Leo J. Schowalter , Kosuke Sato , Tomohiro Morishita
发明人： Craig Moe , James R. Grandusky , Shawn R. Gibb , Leo J. Schowalter , Kosuke Sato , Tomohiro Morishita
IPC分类号： H01L33/06 , H01L33/14 , H01L33/32 , H01L33/46 , H01L33/00 , H01L33/02 , H01L33/36 , H01L33/40
摘要： In various embodiments, light-emitting devices incorporate graded layers with compositional offsets at one or both end points of the graded layer to promote formation of two-dimensional carrier gases and polarization doping, thereby enhancing device performance.
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公开(公告)号：US10074784B2
公开(公告)日：2018-09-11
申请号：US14596806
申请日：2015-01-14
CPC分类号： H01L33/58 , H01L33/22 , H01L33/405 , H01L33/54 , H01L33/56 , H01L2933/0058
摘要： In various embodiments, a rigid lens is attached to a light-emitting semiconductor die via a layer of encapsulant having a thickness insufficient to prevent propagation of thermal expansion mismatch-induced strain between the rigid lens and the semiconductor die.
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公开(公告)号：US20170179336A1
公开(公告)日：2017-06-22
申请号：US15449044
申请日：2017-03-03
CPC分类号： H01L33/0075 , H01L33/04 , H01L33/06 , H01L33/12 , H01L33/14 , H01L33/22 , H01L33/32 , H01L33/325 , H01L33/387 , H01L33/40 , H01L33/405 , H01L33/42 , H01L33/46 , H01L33/60 , H01L2933/0016 , H01L2933/0025 , H01L2933/0058
摘要： In various embodiments, light-emitting devices incorporate smooth contact layers and polarization doping (i.e., underlying layers substantially free of dopant impurities) and exhibit high photon extraction efficiencies.
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公开(公告)号：US20170084779A1
公开(公告)日：2017-03-23
申请号：US15267458
申请日：2016-09-16
申请人： Craig MOE , James R. GRANDUSKY , Shawn R. GIBB , Leo J. SCHOWALTER , Kosuke SATO , Tomohiro MORISHITA
发明人： Craig MOE , James R. GRANDUSKY , Shawn R. GIBB , Leo J. SCHOWALTER , Kosuke SATO , Tomohiro MORISHITA
CPC分类号： H01L33/06 , H01L33/0075 , H01L33/025 , H01L33/145 , H01L33/32 , H01L33/36 , H01L33/405 , H01L33/46
摘要： In various embodiments, light-emitting devices incorporate graded layers with compositional offsets at one or both end points of the graded layer to promote formation of two-dimensional carrier gases and polarization doping, thereby enhancing device performance.
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公开(公告)号：US20160181487A1
公开(公告)日：2016-06-23
申请号：US14596806
申请日：2015-01-14
CPC分类号： H01L33/58 , H01L33/22 , H01L33/405 , H01L33/54 , H01L33/56 , H01L2933/0058
摘要： In various embodiments, a rigid lens is attached to a light-emitting semiconductor die via a layer of encapsulant having a thickness insufficient to prevent propagation of thermal expansion mismatch-induced strain between the rigid lens and the semiconductor die.
摘要翻译： 在各种实施例中，刚性透镜通过具有不足以防止刚性透镜和半导体裸片之间的热膨胀失配诱导应变传播的厚度的密封剂层附着到发光半导体管芯。
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