- Patent Title: Photon extraction from nitride ultraviolet light-emitting devices
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Application No.: US14596806Application Date: 2015-01-14
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Publication No.: US10074784B2Publication Date: 2018-09-11
- Inventor: Leo J. Schowalter , Jianfeng Chen , James R. Grandusky
- Applicant: Leo J. Schowalter , Jianfeng Chen , James R. Grandusky
- Applicant Address: US NY Green Island
- Assignee: CRYSTAL IS, INC.
- Current Assignee: CRYSTAL IS, INC.
- Current Assignee Address: US NY Green Island
- Agency: Morgan, Lewis & Bockius LLP
- Main IPC: H01L33/58
- IPC: H01L33/58 ; H01L33/54 ; H01L33/22 ; H01L33/40 ; H01L33/56

Abstract:
In various embodiments, a rigid lens is attached to a light-emitting semiconductor die via a layer of encapsulant having a thickness insufficient to prevent propagation of thermal expansion mismatch-induced strain between the rigid lens and the semiconductor die.
Public/Granted literature
- US20160181487A1 PHOTON EXTRACTION FROM NITRIDE ULTRAVIOLET LIGHT-EMITTING DEVICES Public/Granted day:2016-06-23
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