Invention Grant
- Patent Title: Aluminum nitride substrate removal for ultraviolet light-emitting devices
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Application No.: US15977031Application Date: 2018-05-11
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Publication No.: US10756234B2Publication Date: 2020-08-25
- Inventor: James R. Grandusky , Leo J. Schowalter , Craig Moe
- Applicant: James R. Grandusky , Leo J. Schowalter , Craig Moe
- Applicant Address: US NY Green Island
- Assignee: CRYSTAL IS, INC.
- Current Assignee: CRYSTAL IS, INC.
- Current Assignee Address: US NY Green Island
- Agency: Morgan, Lewis & Bockius LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L33/00 ; H01L33/32 ; H01L33/20 ; H01L21/78
Abstract:
In various embodiments, extraction efficiency of light-emitting devices fabricated on aluminum nitride substrates is enhanced via removal of at least a portion of the substrate.
Public/Granted literature
- US20180331253A1 ALUMINUM NITRIDE SUBSTRATE REMOVAL FOR ULTRAVIOLET LIGHT-EMITTING DEVICES Public/Granted day:2018-11-15
Information query
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