公开(公告)号：US20080020591A1

公开(公告)日：2008-01-24

申请号：US11762590

申请日：2007-06-13

Applicant: Mihaela Balseanu ,  Victor Nguyen ,  Li-Qun Xia ,  Derek Witty ,  Hichem M'Saad ,  Mei-Yee Shek ,  Isabelita Roflox

Inventor： Mihaela Balseanu ,  Victor Nguyen ,  Li-Qun Xia ,  Derek Witty ,  Hichem M'Saad ,  Mei-Yee Shek ,  Isabelita Roflox

IPC: H01L21/31

CPC classification number: H01L21/3105 ,  C23C16/345 ,  C23C16/56 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/3185 ,  H01L21/823807 ,  H01L29/66583 ,  H01L29/7843

Abstract: Stress of a silicon nitride layer may be enhanced by deposition at higher temperatures. Employing an apparatus that allows heating of a substrate to substantially greater than 400° C. (for example a heater made from ceramic rather than aluminum), the silicon nitride film as-deposited may exhibit enhanced stress allowing for improved performance of the underlying MOS transistor device. In accordance with alternative embodiments, a deposited silicon nitride film is exposed to curing with ultraviolet (UV) radiation at an elevated temperature, thereby helping remove hydrogen from the film and increasing film stress. In accordance with still other embodiments, a silicon nitride film is formed utilizing an integrated process employing a number of deposition/curing cycles to preserve integrity of the film at the sharp corner of the underlying raised feature. Adhesion between successive layers may be promoted by inclusion of a post-UV cure plasma treatment in each cycle.

Abstract translation: 氮化硅层的应力可以通过在较高温度下沉积来增强。 使用允许将衬底加热到​​基本上大于400℃的装置（例如由陶瓷而不是铝制成的加热器），沉积的氮化硅膜可能表现出增强的应力，从而可以改善下面的MOS晶体管的性能 设备。 根据替代实施例，沉积的氮化硅膜在升高的温度下暴露于紫外线（UV）辐射固化，从而有助于从膜中除去氢并增加膜应力。 根据其他实施例，使用采用多个沉积/固化周期的整合方法形成氮化硅膜，以保持薄膜在底层凸起特征的尖角处的完整性。 可以通过在每个循环中包括UV后固化等离子体处理来促进连续层之间的粘附。

公开(公告)号：US20080008842A1

公开(公告)日：2008-01-10

申请号：US11483951

申请日：2006-07-07

Applicant: Jyr Hong Soo ,  Matthew Spuller ,  Michael S. Cox ,  Martin Jay Seamons ,  Amir Al-Bayati ,  Bok Hoen Kim ,  Hichem M'Saad

Inventor： Jyr Hong Soo ,  Matthew Spuller ,  Michael S. Cox ,  Martin Jay Seamons ,  Amir Al-Bayati ,  Bok Hoen Kim ,  Hichem M'Saad

IPC: H05H1/24

CPC classification number: H01J37/32165 ,  H01J37/32091 ,  H01J37/32935

Abstract: Methods for reducing plasma instability for plasma depositing a dielectric layer are provided. In one embodiment, the method includes providing a substrate in a plasma processing chamber, flowing a gas mixture into the chamber, applying an RF power to an electrode to form a plasma in the chamber, and collecting DC bias information. In another embodiment, the method for plasma processing includes obtaining of DC bias information over a plurality of plasma generation events, and determining an RF power application parameter from the DC bias information.

Abstract translation: 提供了用于降低等离子体沉积介电层的等离子体不稳定性的方法。 在一个实施例中，该方法包括在等离子体处理室中提供衬底，将气体混合物流入室中，向电极施加RF功率以在腔室中形成等离子体，并收集DC偏置信息。 在另一个实施例中，等离子体处理的方法包括在多个等离子体产生事件中获得DC偏置信息，以及从DC偏置信息确定RF功率应用参数。

公开(公告)号：US20080003824A1

公开(公告)日：2008-01-03

申请号：US11427324

申请日：2006-06-28

Applicant: Deenesh Padhi ,  Hyoung-Chan Ha ,  Sudha Rathi ,  Derek R. Wtty ,  Chiu Chan ,  Sohyun Park ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Hichem M'Saad

Inventor： Deenesh Padhi ,  Hyoung-Chan Ha ,  Sudha Rathi ,  Derek R. Wtty ,  Chiu Chan ,  Sohyun Park ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Hichem M'Saad

IPC: H01L21/302

CPC classification number: H01L21/3146 ,  C23C16/045 ,  C23C16/26 ,  C23C16/5096 ,  C23C16/56 ,  H01L21/31144

Abstract: A method for depositing an amorphous carbon layer on a substrate includes the steps of positioning a substrate in a chamber, introducing a hydrocarbon source into the processing chamber, introducing a heavy noble gas into the processing chamber, and generating a plasma in the processing chamber. The heavy noble gas is selected from the group consisting of argon, krypton, xenon, and combinations thereof and the molar flow rate of the noble gas is greater than the molar flow rate of the hydrocarbon source. A post-deposition termination step may be included, wherein the flow of the hydrocarbon source and the noble gas is stopped and a plasma is maintained in the chamber for a period of time to remove particles therefrom.

Abstract translation: 在基板上沉积无定形碳层的方法包括以下步骤：将基板定位在室中，将烃源引入处理室，将重稀有气体引入处理室，以及在处理室中产生等离子体。 重稀土气体选自氩，氪，氙及其组合，惰性气体的摩尔流量大于烃源的摩尔流量。 可以包括沉积终止步骤，其中停止烃源和惰性气体的流动，并且将等离子体保持在室中一段时间​​以从中除去颗粒。

公开(公告)号：US20060289795A1

公开(公告)日：2006-12-28

申请号：US11383383

申请日：2006-05-15

Applicant: Dale Dubois ,  Juan Rocha-Alvarez ,  Amir Al-Bayati ,  Khaled Elsheref ,  Alexandros Demos ,  Lester D'Cruz ,  Hichem M'Saad ,  Ashish Shah ,  Takashi Shimizu ,  Naoyuki Iwasaki

Inventor： Dale Dubois ,  Juan Rocha-Alvarez ,  Amir Al-Bayati ,  Khaled Elsheref ,  Alexandros Demos ,  Lester D'Cruz ,  Hichem M'Saad ,  Ashish Shah ,  Takashi Shimizu ,  Naoyuki Iwasaki

IPC: G21G5/00

CPC classification number: H01J37/317 ,  H01J2237/2001

Abstract: Methods and apparatus for electron beam treatment of a substrate are provided. An electron beam apparatus that includes a vacuum chamber, at least one thermocouple assembly in communication with the vacuum chamber; and a heating device in communication with the vacuum chamber and combinations thereof are provided. In one embodiment, the vacuum chamber comprises a cathode, an anode, and a substrate support. In another embodiment, the vacuum chamber comprises a grid located between the anode and the substrate support. In one embodiment the heating device comprises a first parallel light array and a second light array positioned such that the first parallel light array and the second light array intersect. In one embodiment the thermocouple assembly comprises a temperature sensor made of aluminum nitride.

Abstract translation: 提供了用于基板的电子束处理的方法和装置。 一种电子束装置，包括真空室，与真空室连通的至少一个热电偶组件; 并且提供与真空室连通的加热装置及其组合。 在一个实施例中，真空室包括阴极，阳极和衬底支撑件。 在另一个实施例中，真空室包括位于阳极和基板支撑件之间的格栅。 在一个实施例中，加热装置包括第一平行光阵列和第二光阵列，其定位成使得第一平行光阵列和第二光阵列相交。 在一个实施例中，热电偶组件包括由氮化铝制成的温度传感器。

公开(公告)号：US20060231524A1

公开(公告)日：2006-10-19

申请号：US11422031

申请日：2006-06-02

Applicant: Wei Liu ,  Jim He ,  Sang Ahn ,  Meihua Shen ,  Hichem M'Saad ,  Wendy Yeh ,  Christopher Bencher

Inventor： Wei Liu ,  Jim He ,  Sang Ahn ,  Meihua Shen ,  Hichem M'Saad ,  Wendy Yeh ,  Christopher Bencher

IPC: C23F1/00 ,  B44C1/22 ,  G03C5/00 ,  H01L21/302 ,  C03C25/68

CPC classification number: G03F7/091 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/3146

Abstract: A method of etching a substrate is provided. The method of etching a substrate includes transferring a pattern into the substrate using a double patterned amorphous carbon layer on the substrate as a hardmask. Optionally, a non-carbon based layer is deposited on the amorphous carbon layer as a capping layer before the pattern is transferred into the substrate.

Abstract translation: 提供蚀刻基板的方法。 蚀刻基板的方法包括使用基板上的双图案化非晶碳层作为硬掩模将图案转印到基板中。 任选地，在将图案转移到基底内之前，将非碳基层沉积在无定形碳层上作为覆盖层。

公开(公告)号：US20060192150A1

公开(公告)日：2006-08-31

申请号：US11414649

申请日：2006-04-27

Applicant: Alexandros Demos ,  Khaled Elsheref ,  Yuri Trachuk ,  Tom Cho ,  Girish Dixit ,  Hichem M'Saad ,  Derek Witty

Inventor： Alexandros Demos ,  Khaled Elsheref ,  Yuri Trachuk ,  Tom Cho ,  Girish Dixit ,  Hichem M'Saad ,  Derek Witty

IPC: G21K5/10 ,  H01J37/08

CPC classification number: H01J37/317 ,  H01J2237/0041

Abstract: Embodiments in accordance with the present invention relate to a number of techniques, which may be applied alone or in combination, to reduce charge damage of substrates exposed to electron beam radiation. In one embodiment, charge damage is reduced by establishing a robust electrical connection between the exposed substrate and ground. In another embodiment, charge damage is reduced by modifying the sequence of steps for activating and deactivating the electron beam source to reduce the accumulation of charge on the substrate. In still another embodiment, a plasma is struck in the chamber containing the e-beam treated substrate, thereby removing accumulated charge from the substrate. In a further embodiment of the present invention, the voltage of the anode of the e-beam source is reduced in magnitude to account for differences in electron conversion efficiency exhibited by different cathode materials.

Abstract translation: 根据本发明的实施例涉及可以单独或组合应用的多种技术，以减少暴露于电子束辐射的衬底的电荷损伤。 在一个实施例中，通过在暴露的基板和地之间建立牢固的电连接来减小电荷损伤。 在另一个实施例中，通过修改用于激活和去激活电子束源的步骤顺序来减少电荷损伤，以减少电荷在衬底上的累积。 在另一个实施例中，在包含电子束处理的衬底的室中撞击等离子体，从而从衬底去除积聚的电荷。 在本发明的另一个实施例中，电子束源的阳极的电压的大小被减小以考虑到由不同的阴极材料表现的电子转换效率的差异。

公开(公告)号：US20060189162A1

公开(公告)日：2006-08-24

申请号：US11405852

申请日：2006-04-18

Applicant: Lihua Huang ,  Tzu-Fang Huang ,  Dian Sugiarto ,  Jerry Sugiarto ,  Li-qun Xia ,  Peter Lee ,  Hichem M'Saad ,  Zhenjiang Cui ,  Sohyun Park

Inventor： Lihua Huang ,  Tzu-Fang Huang ,  Dian Sugiarto ,  Jerry Sugiarto ,  Li-qun Xia ,  Peter Lee ,  Hichem M'Saad ,  Zhenjiang Cui ,  Sohyun Park

IPC: H01L21/31 ,  H01L21/469

CPC classification number: H01L21/31633 ,  C23C16/02 ,  C23C16/325 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76832

Abstract: Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including introducing an organosilicon compound and an oxidizing gas at a first ratio of organosilicon compound to oxidizing gas into the processing chamber, generating a plasma of the oxidizing gas and the organosilicon compound to form an initiation layer on a barrier layer comprising at least silicon and carbon, introducing the organosilicon compound and the oxidizing gas at a second ratio of organosilicon compound to oxidizing gas greater than the first ratio into the processing chamber, and depositing a first dielectric layer adjacent the dielectric initiation layer.

公开(公告)号：US20060093756A1

公开(公告)日：2006-05-04

申请号：US10981430

申请日：2004-11-03

Applicant: Nagarajan Rajagopalan ,  Li-Qun Xia ,  Mihaela Balseanu ,  Thomas Nowak ,  Ranjana Shah ,  Huiwen Xu ,  Chad Peterson ,  Derek Witty ,  Hichem M'Saad

Inventor： Nagarajan Rajagopalan ,  Li-Qun Xia ,  Mihaela Balseanu ,  Thomas Nowak ,  Ranjana Shah ,  Huiwen Xu ,  Chad Peterson ,  Derek Witty ,  Hichem M'Saad

IPC: B05D1/36

CPC classification number: C23C16/4405 ,  C23C16/4404 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/02301 ,  H01L21/3121 ,  H01L21/31633

Abstract: A method for seasoning a deposition chamber wherein the chamber components and walls are densely coated with a material that does not contain carbon prior to deposition of an organo-silicon material on a substrate. An optional carbon-containing layer may be deposited therebetween. A chamber cleaning method using low energy plasma and low pressure to remove residue from internal chamber surfaces is provided and may be combined with the seasoning process.

Abstract translation: 一种用于调节沉积室的方法，其中在将有机硅材料沉积在基底上之前，室部件和壁被不含碳的材料致密地涂覆。 可以在其间沉积任选的含碳层。 提供了使用低能量等离子体和低压以从内部室表面除去残余物的室清洁方法，并且可以与调味过程组合。

公开(公告)号：US07030041B2

公开(公告)日：2006-04-18

申请号：US10801190

申请日：2004-03-15

Applicant: Lihua Li ,  Tzu-Fang Huang ,  Jerry Sugiarto, legal representative ,  Li-Qun Xia ,  Peter Wai-Man Lee ,  Hichem M'Saad ,  Zhenjiang Cui ,  Sohyun Park

Inventor： Dian Sugiarto, deceased

IPC: H01L21/31 ,  H01L21/469

CPC classification number: H01L21/31633 ,  C23C16/02 ,  C23C16/325 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76832

Abstract: Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including introducing an organosilicon compound and an oxidizing gas at a first ratio of organosilicon compound to oxidizing gas into the processing chamber, generating a plasma of the oxidizing gas and the organosilicon compound to form an initiation layer on a barrier layer comprising at least silicon and carbon, introducing the organosilicon compound and the oxidizing gas at a second ratio of organosilicon compound to oxidizing gas greater than the first ratio into the processing chamber, and depositing a first dielectric layer adjacent the dielectric initiation layer.

Abstract translation: 提供了用于处理用于沉积在两个低k电介质层之间具有低介电常数的粘合层的衬底的方法。 一方面，本发明提供一种处理基板的方法，包括以有机硅化合物的第一比例将有机硅化合物和氧化气体与氧化气体导入处理室，产生氧化气体的等离子体和有机硅化合物，形成 在至少包含硅和碳的阻挡层上的起始层，以有机硅化合物的第二比例将有机硅化合物和氧化气体与大于第一比例的氧化气体引入到处理室中，以及沉积与第 电介质起始层。

公开(公告)号：US20060046520A1

公开(公告)日：2006-03-02

申请号：US10931609

申请日：2004-09-01

Applicant: Deenesh Padhi ,  Sohyun Park ,  Ganesh Balasubramanian ,  Juan Rocha-Alvarez ,  Li-Qun Xia ,  Derek Witty ,  Hichem M'Saad

Inventor： Deenesh Padhi ,  Sohyun Park ,  Ganesh Balasubramanian ,  Juan Rocha-Alvarez ,  Li-Qun Xia ,  Derek Witty ,  Hichem M'Saad

IPC: H01L21/31

CPC classification number: H01L21/31633 ,  C23C16/029 ,  C23C16/401 ,  C23C16/45523 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/76841

Abstract: A method of forming a graded dielectric layer on an underlying layer including flowing a mixture of a silicon-carbon containing gas, an oxygen containing gas and a carrier gas through a showerhead comprising a blocking plate and a faceplate to form an oxide rich portion of the graded dielectric layer, where the silicon-carbon containing gas has an initial flow rate, flowing the silicon-carbon containing gas at a first intermediate flow rate for about 0.5 seconds or longer, where the first intermediate flow rate is higher than the initial flow rate, and flowing the silicon-carbon containing gas at a fastest flow rate higher than the first intermediate flow rate to form a carbon rich portion of the graded dielectric layer.

Abstract translation: 一种在下层上形成渐变电介质层的方法，包括使含硅碳的气体，含氧气体和载体气体的混合物流过包括阻挡板和面板的喷头，以形成氧化物富集部分 其中含硅碳的气体具有初始流速，使含硅碳的气体以第一中间流速流动约0.5秒或更长，其中第一中间流速高于初始流速 并且使含硅碳的气体以比第一中间流速高的最快流速流动，以形成渐变电介质层的富碳部分。