公开(公告)号：US20220144711A1

公开(公告)日：2022-05-12

申请号：US17580990

申请日：2022-01-21

申请人： FREE FORM FIBERS, LLC

发明人： Shay L. HARRISON ,  John L. SCHNEITER ,  Joseph PEGNA ,  Ram K. GODUGUCHINTA ,  Kirk L. WILLIAMS ,  Erik G. VAALER

IPC分类号： C04B35/622 ,  G21C3/58 ,  C23C16/32 ,  C01B32/963

摘要： A method of forming a high purity ingot for wafer production, such as a silicon carbidewafer. Precursors are added to a reactor; at least part of a fiber is formed in the reactor from the precursors using chemical deposition interacting with the precursors; and granular material is then formed from the fiber. The method further includes forming the ingot from the granular material. In one aspect, the chemical deposition can include laser induced chemical vapor deposition. Further, the method can include separating one or more wafers from the ingot for use in semiconductor fabrication.

公开(公告)号：US11174167B1

公开(公告)日：2021-11-16

申请号：US16996694

申请日：2020-08-18

申请人： Group14 Technologies, Inc.

发明人： Abirami Dhanabalan ,  Avery J. Sakshaug ,  Henry R. Costantino

IPC分类号： C01B32/963 ,  C04B35/565 ,  C04B38/00

摘要： Silicon-carbon composite materials and related processes are disclosed that overcome the challenges for providing amorphous nano-sized silicon entrained within porous carbon. Compared to other, inferior materials and processes described in the prior art, the materials and processes disclosed herein find superior utility in various applications, including energy storage devices such as lithium ion batteries.

公开(公告)号：US20210300767A1

公开(公告)日：2021-09-30

申请号：US17182354

申请日：2021-02-23

申请人： NGK INSULATORS, LTD.

发明人： Taku NISHIGAKI ,  Suguru KODAMA ,  Keisuke KIMURA

IPC分类号： C01B32/963 ,  B01J35/04 ,  B01J27/224 ,  B01J35/02 ,  B01J37/04

摘要： A method for manufacturing a honeycomb structure containing silicon carbide, including blending a recycled raw material derived from a material constituting a first honeycomb structure containing silicon carbide in a process after firing as a part of an initial raw material for a second honeycomb structure containing silicon carbide, wherein the initial raw material comprises silicon carbide and metallic silicon; and the recycled raw material is a powder recovered from the material constituting the first honeycomb structure containing silicon carbide in the process after firing, and after the recovering, a particle size is adjusted so that a 10% diameter (D10) is 10 μm or more and a 50% diameter (D50) is 35 μm or less when a cumulative particle size distribution on a volume basis is measured by a laser diffraction/scattering method.

公开(公告)号：US11046582B2

公开(公告)日：2021-06-29

申请号：US16729065

申请日：2019-12-27

申请人： INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

发明人： Ta-Ching Hsiao ,  Chu-Pi Jeng ,  Mu-Hsi Sung ,  Kuo-Lun Huang

IPC分类号： C01B32/05 ,  C01B32/963 ,  C01B32/97

摘要： A method of purifying silicon carbide powder includes: providing a container with a surface coated by a nitrogen-removal metal layer, wherein the nitrogen-removal metal layer is tantalum, niobium, tungsten, or a combination thereof; putting a silicon carbide powder into the container to contact the nitrogen-removal metal layer; and heating the silicon carbide powder under an inert gas at a pressure of 400 torr to 760 torr at 1700° C. to 2300° C. for 2 to 10 hours, thereby reducing the nitrogen content of the silicon carbide powder.

公开(公告)号：US10759664B2

公开(公告)日：2020-09-01

申请号：US15855246

申请日：2017-12-27

申请人： KOREA INSTITUTE OF ENERGY RESEARCH

发明人： Won Chul Cho ,  Myung Won Seo ,  Hae In Lee ,  Jae Goo Lee ,  Ki Kwang Bae ,  Chang Hee Kim ,  Jong Won Kim ,  Chu Sik Park ,  Kyoung-Soo Kang ,  Seong Uk Jeong ,  Hyun Seok Cho

IPC分类号： C01B32/97 ,  C01B32/963 ,  C01F5/00 ,  C01F5/04 ,  C01F5/02 ,  C01B33/22 ,  C01B33/06

摘要： A method of preparing silicon carbide according to the present invention includes reacting a silicon-containing compound with carbon dioxide, wherein a reducing agent is optionally used.

公开(公告)号：US20180290893A1

公开(公告)日：2018-10-11

申请号：US15939423

申请日：2018-03-29

申请人： Pallidus, Inc.

发明人： Douglas M. Dukes ,  Glenn Sandgren ,  Andrew R. Hopkins ,  Isabel Burlingham ,  Mark S. Land

IPC分类号： C01B32/963 ,  C30B29/36 ,  C30B29/66 ,  C30B25/16

摘要： Volumetric shapes of SiC starting materials for boule growth. Methods of controlling vapor deposition growth of SiC boules, and providing directional flux. Methods of increase the number of wafers, the number of electronic components and the number of operable devices from a single boule growth cycle.