摘要:
A method for removing background signal values from readout signal values generated by image pixels in a pixel array may include generating background signal values using optically black pixels formed around a border of the pixel array. The background signal values may be separated into blocks. Block average values may be calculated based on the background signal values included in each of the blocks. Corner regions of the pixel array may be free of image pixels and optically black pixels. Corner background signal values may be extrapolated based on the block average values. Image pixel background signal values may be interpolated based on the block average values and the corner background signal values. The image pixel background signal values may be subtracted from the readout values.
摘要:
A pixel within a pixel array of an integrated-circuit image sensor outputs an analog signal representative of accumulated photocharge. First and second analog-to-digital conversions of the analog signal are initiated while the pixel is outputting the analog signal, the first analog-to-digital conversion corresponding to a low-light range of photocharge accumulation within the pixel and the second analog-to-digital conversion corresponding to a brighter-light range of photocharge accumulation within the pixel.
摘要:
A CMOS sensor has unit pixels each structured by a light receiving element and three transistors, to prevent against the phenomenon of saturation shading and the reduction of dynamic range. The transition time (fall time), in switching off the voltage on a drain line shared in all pixels, is given longer than the transition time in turning of any of the reset line and the transfer line. For this reason, the transistor constituting a DRN drive buffer is made proper in its W/L ratio. Meanwhile, a control resistance or current source is inserted on a line to the GND, to make proper the operation current during driving. This reduces saturation shading amount. By making a reset transistor in a depression type, the leak current to a floating diffusion is suppressed to broaden the dynamic range.
摘要:
A solid-state imaging device includes a pixel array section that has at least one pixel with a photoelectric conversion unit and a charge detection unit. A driving section is configured to read out a signal of the pixel, a first portion of said signal being based on signal charge, a second portion of said signal being based on a reset potential. A signal processing section is configured to read out the first portion of the signal as a reference voltage, with the reference voltage being adjusted to cause the first and second portions of the signal to be within an input voltage range.
摘要:
An image sensor includes a light-electron conversion unit, a signal generation unit, and a selection unit. The light-electron conversion unit generates photo-charges from incident light. The signal generation unit accumulates photo-charges from the converter in a storage node during a detection period, and then generates a first analog signal and a second analog signal during an output period. The analog signals are generated based on an amount of photo-charges accumulated in the storage node. The selection unit generates an image signal based on one of the first analog signal and the second analog signal.
摘要:
A radiation imaging apparatus includes a unit constituted by arranging blocks in line and an information processing unit. Each of the blocks includes a conversion element configured to generate an image signal corresponding to radiation, a switching element connected between the conversion element and a column signal line, a detection element configured to detect radiation, and a detection signal line connected to the detection element. The information processing unit corrects a signal from the detection element, by using a value of the signal based on a parasitic capacitance between the conversion elements arranged on the same column as a column of the detection element.
摘要:
According to one embodiment, a solid state imaging device includes an image CDS processing unit that outputs a pixel signal based on a difference between a pixel voltage read from a pixel during a reset period and a pixel voltage read from the pixel during a signal read period, a temperature sensor that outputs a diode voltage when a diode current is changed, a temperature CDS processing unit that outputs a temperature measurement value based on a difference of the diode voltage at the time when the diode current is changed, and a timing generator that controls the reset period, the signal read period, and timing of changing the diode current of the temperature sensor.
摘要:
Methods for forming a device are presented. A substrate having top and bottom pad stacks is provided. Each pad stack includes at least first and second pad layers. The second pad layers of the top and bottom pad stacks include an initial thickness TT1 and TB1 respectively. Trench isolation regions are formed in the substrate. The second pad layer of the top and bottom pad stacks are removed after forming the trench isolation regions by a batch wet etch process.
摘要:
A solid-state imaging device includes a pixel array section that has at least one pixel with a photoelectric conversion unit and a charge detection unit. A driving section is configured to read out a signal of the pixel, a first portion of said signal being based on signal charge, a second portion of said signal being based on a reset potential. A signal processing section is configured to read out the first portion of the signal as a reference voltage, with the reference voltage being adjusted to cause the first and second portions of the signal to be within an input voltage range.
摘要:
Systems and methods for implementing array cameras configured to perform super-resolution processing to generate higher resolution super-resolved images using a plurality of captured images and lens stack arrays that can be utilized in array cameras are disclosed. An imaging device in accordance with one embodiment of the invention includes at least one imager array, and each imager in the array comprises a plurality of light sensing elements and a lens stack including at least one lens surface, where the lens stack is configured to form an image on the light sensing elements, control circuitry configured to capture images formed on the light sensing elements of each of the imagers, and a super-resolution processing module configured to generate at least one higher resolution super-resolved image using a plurality of the captured images.