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37 条记录 (耗时 0.029 秒)

    Semiconductor device, its manufacturing method and electronic apparatus thereof
    31.
    发明授权
    Semiconductor device, its manufacturing method and electronic apparatus thereof 有权
    半导体装置及其制造方法及其电子装置

    公开(公告)号：US07884407B2

    公开(公告)日：2011-02-08

    申请号：US12362346

    申请日：2009-01-29

    申请人： Takashi Nagano ,  Yasushi Morita

    发明人： Takashi Nagano ,  Yasushi Morita

    IPC分类号： H01L21/8238

    CPC分类号： H01L27/14609 ,  H01L21/82385 ,  H01L21/823864 ,  H01L27/092 ,  H01L27/10873 ,  H01L27/10894 ,  H01L27/14689

    摘要： The present invention proposes a semiconductor device, its manufacturing method and to an electronic apparatus thereof equipped with the semiconductor device where it becomes possible to make a CMOS type solid-state imaging device, an imager area formed with a MOS transistor of an LDD structure without having a metal silicide layer of a refractory metal, an area of DRAM cells and the like into a single semiconductor chip. According to the present invention, a semiconductor device is constituted such that an insulating film having a plurality of layers is used, sidewalls at the gate electrodes are formed by etching back the insulating film of the plurality of layers or a single layer film in the region where metal silicide layers are formed and in the region where the metal silicide layers are not formed, sidewalls composed of an upper layer insulating film is formed on a lower layer insulating film whose surface is coated or the insulating film of the plurality of layers remain unchanged.

    摘要翻译： 本发明提出一种半导体器件及其制造方法及其电子设备，其中可以制造CMOS型固态成像器件，形成有LDD结构的MOS晶体管的成像器区域的半导体器件没有 具有难熔金属的金属硅化物层，DRAM单元的面积等形成单个半导体芯片。 根据本发明，半导体器件被构成为使用具有多个层的绝缘膜，通过蚀刻多个层的绝缘膜或在该区域中的单层膜来形成栅电极的侧壁 在形成金属硅化物层的地方，并且在未形成金属硅化物层的区域中，由上层绝缘膜构成的侧壁形成在其表面被涂覆的下层绝缘膜上，或者多层绝缘膜保持不变 。

    Machine element selection support system
    32.
    发明授权
    Machine element selection support system 失效
    机器元件选择支持系统

    公开(公告)号：US07254551B2

    公开(公告)日：2007-08-07

    申请号：US10199038

    申请日：2002-07-22

    申请人： Hiroyuki Nakano ,  Yasushi Morita

    发明人： Hiroyuki Nakano ,  Yasushi Morita

    IPC分类号： G06Q30/00

    CPC分类号： G06Q10/06 ,  G06Q30/0631 ,  G06Q40/04

    摘要： The machine element selection support system comprises a database apparatus and a selection support server, while the selection support server is connected to a network. A customer, who wishes to select a machine element, gains access to the selection support server using a customer terminal. The selection support server receives, from the customer terminal, information relevant to the specifications and operating conditions of machine elements to be selected, the purchase conditions of the machine elements, and machine element selection information including information relevant to the output mode of information relevant to selection candidates, extracts selection candidates in accordance with not only the specifications and operating conditions information but also information stored in the specification databases and, in accordance with an output mode received, outputs to the customer terminal information relevant to the selection candidates that can satisfy purchase conditions of the extracted selection candidates.

    摘要翻译： 机器元素选择支持系统包括数据库装置和选择支持服务器，而选择支持服务器连接到网络。 希望选择机器元件的客户可以使用客户终端访问选择支持服务器。 选择支持服务器从客户终端接收与要选择的机器元件的规格和操作条件相关的信息，机器元件的购买条件和机器元件选择信息，其包括与相关信息的输出模式有关的信息 选择候选者，不仅根据规格和操作条件信息提取选择候选，而且根据存储在规格数据库中的信息提取选择候选，并且根据所接收的输出模式向客户终端输出与可以满足购买的选择候选相关的信息 提取的候选选项的条件。

    Main shaft device and machine tool with the same
    33.
    发明申请
    Main shaft device and machine tool with the same 有权
    主轴装置与机床相同

    公开(公告)号：US20060034670A1

    公开(公告)日：2006-02-16

    申请号：US10534354

    申请日：2004-03-31

    申请人： Sumio Sugita ,  Mitsuho Aoki ,  Yoshifumi Inagaki ,  Yasushi Morita

    发明人： Sumio Sugita ,  Mitsuho Aoki ,  Yoshifumi Inagaki ,  Yasushi Morita

    IPC分类号： B23C1/00 ,  B23C5/26 ,  B23C5/28

    CPC分类号： B23Q11/123 ,  B23B31/265 ,  B23Q1/70 ,  B23Q5/10 ,  Y10T29/4973 ,  Y10T408/95 ,  Y10T409/303976 ,  Y10T409/309352 ,  Y10T409/309464 ,  Y10T409/309912

    摘要： An object of the invention is to provide a spindle apparatus which facilitates assembling and removing operations at the time of maintenance and which is low cost. In the invention, the diameter becomes smaller in the order of an inner peripheral diameter of an outer cylinder (3), an inside diameter of a stator (4), and an outside diameter of a bearing sleeve (11); a sub-assembly (2) made up of a front housing (8), a rotating shaft (6), and the bearing sleeve (11) is withdrawable from the outer cylinder (3); and the diameter of a rotating part in an arbitrary section located rearwardly of the bearing sleeve (11) is made smaller than a minimum diameter of a non-rotating part between a rear end of the bearing sleeve (11) and the section.

    摘要翻译： 本发明的目的是提供一种在维护时便于组装和拆卸操作并且成本低的主轴装置。 在本发明中，直径以外筒（3）的内周径，定子（4）的内径和轴承套（11）的外径的顺序变小。 由前壳体（8），旋转轴（6）和轴承套筒（11）构成的子组件（2）可从外筒（3）抽出; 并且使位于所述轴承套筒（11）的后方的任意部分中的旋转部件的直径小于所述轴承套筒（11）的后端与所述部分之间的非旋转部件的最小直径。

    Manufacturing process for a semiconductor device using bias ECRCVD and an etch stop layer
    36.
    发明授权
    Manufacturing process for a semiconductor device using bias ECRCVD and an etch stop layer 失效
    使用偏置ECRCVD和蚀刻停止层的半导体器件的制造工艺

    公开(公告)号：US5242853A

    公开(公告)日：1993-09-07

    申请号：US603310

    申请日：1990-10-25

    申请人： Junichi Sato ,  Tetsuo Gocho ,  Yasushi Morita

    发明人： Junichi Sato ,  Tetsuo Gocho ,  Yasushi Morita

    IPC分类号： H01L21/76 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/311 ,  H01L21/762

    CPC分类号： H01L21/76229 ,  H01L21/31144 ,  Y10S148/05 ,  Y10S438/97

    摘要： A semiconductor device manufacturing process and a bias ECRCVD apparatus for the process. The semiconductor device manufacturing process comprises the steps of forming trenches in the surface of a substrate, forming an insulating film by bias ECRCVD over the surface of the substrate, etching the insulating film by lateral leveling etching so as to expand the width of grooves formed in portions of the insulating film which are formed in regions other than those corresponding to the trenches, masking the portions of the insulating film which fill the trenches and removing the portions of the insulating film formed in the regions other than those corresponding to the trenches. An etching stop layer is formed over the surface of the substrate before forming the trenches and the insulating film, and the etching stop layer is removed by etching after removing the portions of the insulating film which are formed in the regions other than those corresponding to the trenches by etching with the portions of the insulating film which fill up the trenches masked. The surfaces of the portions of the insulating film which fill up the trenches are finished so as to be flush with the surface of the substrate. Desirably, the etching stop layer is annealed so as to make the grains of the surface of the etching stop layer smooth so as to enable the complete removal of the portions of the insulating film formed in the regions other than those corresponding to the trenches.