公开(公告)号：US20180061681A1

公开(公告)日：2018-03-01

申请号：US15685342

申请日：2017-08-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Chishio KOSHIMIZU ,  Tatsuo MATSUDO

IPC: H01L21/67 ,  H05H1/46 ,  H01J37/32

Abstract: There is provided a plasma processing apparatus, including: a chamber main body; a plasma trap installed inside a chamber provided by the chamber main body, and configured to divide the chamber into a first space and a second space; a mounting table installed in the second space; a plasma source configured to excite gases supplied to the first space; and a potential adjustment part including an electrode to be capacitively coupled to a plasma generated in the first space, and configured to adjust a potential of the plasma.

公开(公告)号：US20160126064A1

公开(公告)日：2016-05-05

申请号：US14934066

申请日：2015-11-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun YAMAWAKU ,  Tatsuo MATSUDO ,  Chishio KOSHIMIZU

IPC: H01J37/32

CPC classification number: H01J37/3211 ,  H01J37/32183 ,  H01J37/32651 ,  H01J2237/334

Abstract: A plasma processing apparatus includes a high frequency antenna having first and second antenna elements. One end of the first antenna element is grounded and the other end thereof is connected to a high frequency power supply. One end of the second antenna element is an open end and the other end thereof is connected to either one of the one end and the other end of the first antenna element, a line length of the second antenna element having a value obtained by multiplying ((λ/4)+nλ/2) by a fractional shortening (λ is a wavelength of high frequency in vacuum and n is a natural number). A circuit viewed from the high frequency power supply toward the high frequency antenna is configured to generate, when a frequency of a high frequency power is changed, two resonant frequencies by an adjustment of the impedance adjustment unit.

Abstract translation: 等离子体处理装置包括具有第一和第二天线元件的高频天线。 第一天线元件的一端接地，另一端与高频电源连接。 第二天线元件的一端是开放端，其另一端连接到第一天线元件的一端和另一端中的任一端，第二天线元件的线长度具有通过乘以 （λ/ 4）+nλ/ 2）通过分数缩短（λ是真空中的高频波长，n是自然数）。 从高频电源向高频天线观察的电路被配置为通过调整阻抗调整单元来产生高频功率的频率改变两个谐振频率。

公开(公告)号：US20150176974A1

公开(公告)日：2015-06-25

申请号：US14576478

申请日：2014-12-19

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tatsuo MATSUDO ,  Chishio KOSHIMIZU

IPC: G01B11/06 ,  H01L21/67 ,  H01L21/66

CPC classification number: G01B11/06 ,  G01B9/02021 ,  G01B9/02084 ,  G01K11/125 ,  H01J37/32477 ,  H01J37/32935 ,  H01J37/32972 ,  H01L21/67069 ,  H01L21/67253

Abstract: An apparatus for measuring a thickness or wear amount and a temperature of the ceramic member by using a terahertz wave includes a terahertz wave generating unit configured to output a terahertz wave, a terahertz wave analysis unit configured to analyze a terahertz wave and an optical system configured to guide the terahertz wave output from the terahertz wave generating unit to the ceramic member and guide reflected waves of the terahertz wave reflected from the ceramic member to the terahertz wave analysis unit. The terahertz wave analysis unit obtains an optical path difference between a first reflection wave reflected from a front surface of the ceramic member and a second reflection wave reflected from a rear surface of the ceramic member and measures a thickness of the ceramic member based on the optical path difference.

Abstract translation: 用于通过使用太赫兹波来测量陶瓷构件的厚度或磨损量和温度的装置包括：被配置为输出太赫兹波的太赫兹波产生单元，被配置为分析太赫兹波的太赫兹波分析单元和配置的光学系统 将太赫兹波发生单元的太赫兹波输出引导到陶瓷构件，并将从陶瓷构件反射的太赫波的反射波引导到太赫兹波分析单元。 太赫波分析单元获得从陶瓷构件的前表面反射的第一反射波与从陶瓷构件的后表面反射的第二反射波之间的光程差，并且基于光学元件测量陶瓷构件的厚度 路径差异

公开(公告)号：US20150168231A1

公开(公告)日：2015-06-18

申请号：US14570016

申请日：2014-12-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Chishio KOSHIMIZU ,  Tatsuo MATSUDO

IPC: G01K11/32 ,  H01J37/32

CPC classification number: G01B9/02021 ,  G01B9/02044 ,  G01B9/0209 ,  G01K11/125 ,  H01J37/32522 ,  H01J37/32935 ,  H01J37/32972

Abstract: A temperature measuring method of a component of a substrate processing chamber including a surface being worn or being deposited with a foreign material by using. The method includes: providing data representing a relationship between a temperature of the component and an optical path length of a predetermined path within the component; measuring an optical path length of the predetermined path within the component by using optical interference of reflection lights of a low-coherence light from the component when the low-coherence light is irradiated onto the component to travel through the predetermined path; and obtaining a temperature of the component by comparing the measured optical path length with the data.

Abstract translation: 1.一种基板处理室的部件的温度测定方法，其特征在于，所述基板处理室的表面通过使用被磨损或者被外来材料沉积。 该方法包括：提供表示组件的温度与组件内的预定路径的光路长度之间的关系的数据; 当所述低相干光照射到所述部件上行进通过所述预定路径时，通过使用来自所述部件的来自所述部件的低相干光的反射光的光学干涉来测量所述部件内的所述预定路径的光路长度; 以及通过将测量的光程长度与数据进行比较来获得部件的温度。

公开(公告)号：US20150132505A1

公开(公告)日：2015-05-14

申请号：US14538981

申请日：2014-11-12

Applicant: Tokyo Electron Limited

Inventor： Hitoshi KATO ,  Shigehiro MIURA ,  Chishio KOSHIMIZU ,  Jun YAMAWAKU ,  Yohei YAMAZAWA

IPC: H01J37/32

CPC classification number: H01J37/3211 ,  H01J37/321 ,  H01J37/32651

Abstract: A plasma processing apparatus is provided. According to the apparatus, a main antenna connected to a high frequency power source and an auxiliary antenna electrically insulated from main antenna is arranged. Moreover, projection areas when the main antenna and the auxiliary antenna are seen in a plan view are arranged so as not to overlap with each other. More specifically, the auxiliary antenna is arranged on a downstream side in a rotational direction of the turntable relative to the main antenna. Then, a first electromagnetic field is generated in the auxiliary antenna by way of an induction current flowing through the main antenna, and a second induction plasma is generated even in an area under the auxiliary antenna in addition to an area under the main antenna by resonating the auxiliary antenna.

Abstract translation: 提供了一种等离子体处理装置。 根据该装置，设置连接到高频电源的主天线和与主天线电绝缘的辅助天线。 此外，在平面图中看到主天线和辅助天线的投影区域被布置成彼此不重叠。 更具体地，辅助天线布置在转台相对于主天线的旋转方向的下游侧。 然后，通过流经主天线的感应电流在辅助天线中产生第一电磁场，除辅助天线之下的区域之外，还产生第二感应等离子体 辅助天线。

公开(公告)号：US20140286375A1

公开(公告)日：2014-09-25

申请号：US14296647

申请日：2014-06-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun ABE ,  Tatsuo MATSUDO ,  Chishio KOSHIMIZU

IPC: G01J5/02

CPC classification number: G01J5/02 ,  G01K1/026 ,  G01K11/125

Abstract: A temperature measuring apparatus includes a light source, a first splitter, a second splitter, a reference beam reflector, an optical path length adjuster, a reference beam transmitting member, a first to an nth measuring beam transmitting member and a photodetector. The temperature measuring apparatus further includes an attenuator that attenuates the reference beam reflected from the reference beam reflector to thereby make an intensity thereof closer to an intensity of the measurement beam reflected from the temperature measurement object.

Abstract translation: 温度测量装置包括光源，第一分离器，第二分离器，参考光束反射器，光程长度调节器，参考光束传输部件，第一至第N测量光束传输部件和光电检测器。 温度测量装置还包括衰减器，衰减从参考光束反射器反射的参考光束，从而使其强度更接近于从温度测量对象反射的测量光束的强度。

公开(公告)号：US20240087857A1

公开(公告)日：2024-03-14

申请号：US18518696

申请日：2023-11-24

Applicant: Tokyo Electron Limited

Inventor： Chishio KOSHIMIZU ,  Shoichiro MATSUYAMA ,  Makoto KATO

IPC: H01J37/32

CPC classification number: H01J37/32715 ,  H01J37/32568

Abstract: A plasma processing apparatus includes a substrate support. The substrate support includes a base, an electrostatic chuck, a chuck electrode, and an electrode structure. The electrostatic chuck is disposed on the base and has a central region and an annular region. The chuck electrode is disposed in the central region. The electrode structure is disposed below the chuck electrode in the central region and is placed in an electrically floating state. The electrode structure includes a first electrode layer, a second electrode layer disposed below the first electrode layer, and one or more connectors that connect the first electrode layer and the second electrode layer. At least one bias power supply is electrically coupled to the substrate support.

公开(公告)号：US20230395360A1

公开(公告)日：2023-12-07

申请号：US18205426

申请日：2023-06-02

Applicant: Tokyo Electron Limited

Inventor： Kota SHIHOMMATSU ,  Koki TANAKA ,  Yuzuru SAKAI ,  Chishio KOSHIMIZU

IPC: H01J37/32

CPC classification number: H01J37/32816 ,  H01J2237/182 ,  H01J37/32449 ,  H01J37/32137

Abstract: Provided is a technique capable of suppressing pressure fluctuations within a plasma processing chamber. A plasma processing apparatus according to the present disclosure includes: a chamber; a gas supply that supplies a processing gas into the chamber; a power supply that generates a source RF signal to form a plasma from the processing gas within the chamber; a storage that stores in advance a source set value that is a set value of a parameter of the source RF signal; a pressure regulation valve connected to the chamber, the pressure regulation valve being configured to regulate an internal pressure of the chamber; an opening degree calculator that calculates an opening degree of the pressure regulation valve, the opening degree being calculated based on the source set value; and an opening degree controller that controls the opening degree of the pressure regulation valve based on the calculated opening degree.

公开(公告)号：US20230377843A1

公开(公告)日：2023-11-23

申请号：US18227986

申请日：2023-07-31

Applicant: Tokyo Electron Limited

Inventor： Chishio KOSHIMIZU ,  Taichi HIRANO ,  Toru HAYASAKA ,  Shinji KUBOTA ,  Koji MARUYAMA ,  Takashi DOKAN

IPC: H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/32128 ,  H01J37/32174 ,  H01J37/32532 ,  H01J37/32146 ,  H01J37/32165 ,  H01L21/3065

Abstract: A control method of a plasma processing apparatus including a first electrode that places a workpiece thereon includes supplying a bias power to the first electrode, and supplying a source power having a frequency higher than that of the bias power into a plasma processing space. The source power has a first state and a second state. The control method further includes a first control process of alternately applying the first state and the second state of the source power in synchronization with a signal synchronized with a cycle of a radio frequency of the bias power, or a phase within one cycle of a reference electrical state that represents any one of a voltage, current, and electromagnetic field measured in a power feeding system of the bias power.

公开(公告)号：US20230369019A1

公开(公告)日：2023-11-16

申请号：US18227370

申请日：2023-07-28

Applicant: Tokyo Electron Limited

Inventor： Gen TAMAMUSHI ,  Chishio KOSHIMIZU ,  Masahiro INOUE ,  Shoichiro MATSUYAMA

IPC: H01J37/32

CPC classification number: H01J37/32137 ,  H01J37/3299 ,  H01J37/32183 ,  H01J2237/327

Abstract: A plasma processing apparatus includes a chamber, a substrate support, a radio-frequency power supply, and a bias power supply controller. The radio-frequency power supply generates source radio-frequency power to generate plasma in the chamber. The bias power supply periodically provides bias energy having a waveform cycle to a bias electrode on the substrate support. The radio-frequency power supply adjusts a source frequency of the source radio-frequency power in an n-th phase period in an m-th waveform cycle of a plurality of waveform cycles based on a change in a degree of reflection of the source radio-frequency power. The change in the degree of reflection is identified with the source frequency being set differently in the n-th phase period in each of two or more waveform cycles preceding the m-th waveform cycle.