公开(公告)号：US20240395942A1

公开(公告)日：2024-11-28

申请号：US18792782

申请日：2024-08-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Motoki NAKASHIMA ,  Tatsuya HONDA

IPC: H01L29/786 ,  C01G19/00 ,  H01L29/04 ,  H01L29/26

Abstract: An object is to provide a material suitably used for a semiconductor included in a transistor, a diode, or the like. Another object is to provide a semiconductor device including a transistor in which the condition of an electron state at an interface between an oxide semiconductor film and a gate insulating film in contact with the oxide semiconductor film is favorable. Further, another object is to manufacture a highly reliable semiconductor device by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. A semiconductor device is formed using an oxide material which includes crystal with c-axis alignment, which has a triangular or hexagonal atomic arrangement when seen from the direction of a surface or an interface and rotates around the c-axis.

公开(公告)号：US20220293794A1

公开(公告)日：2022-09-15

申请号：US17686736

申请日：2022-03-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masahiko HAYAKAWA ,  Tatsuya HONDA

IPC: H01L29/786 ,  H01L29/49 ,  H01L29/66 ,  H01L27/12 ,  H01L27/146 ,  H01L29/24 ,  H01L29/45

Abstract: When a semiconductor device including a transistor in which a gate electrode layer, a gate insulating film, and an oxide semiconductor film are stacked and a source and drain electrode layers are provided in contact with the oxide semiconductor film is manufactured, after the formation of the gate electrode layer or the source and drain electrode layers by an etching step, a step of removing a residue remaining by the etching step and existing on a surface of the gate electrode layer or a surface of the oxide semiconductor film and in the vicinity of the surface is performed. The surface density of the residue on the surface of the oxide semiconductor film or the gate electrode layer can be 1×1013 atoms/cm2 or lower.

公开(公告)号：US20220165883A1

公开(公告)日：2022-05-26

申请号：US17564556

申请日：2021-12-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Motoki NAKASHIMA ,  Tatsuya HONDA

IPC: H01L29/786 ,  H01L29/26 ,  H01L29/04 ,  C01G19/00

Abstract: An object is to provide a material suitably used for a semiconductor included in a transistor, a diode, or the like. Another object is to provide a semiconductor device including a transistor in which the condition of an electron state at an interface between an oxide semiconductor film and a gate insulating film in contact with the oxide semiconductor film is favorable. Further, another object is to manufacture a highly reliable semiconductor device by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. A semiconductor device is formed using an oxide material which includes crystal with c-axis alignment, which has a triangular or hexagonal atomic arrangement when seen from the direction of a surface or an interface and rotates around the c-axis.

公开(公告)号：US20190013407A1

公开(公告)日：2019-01-10

申请号：US16130588

申请日：2018-09-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Motoki NAKASHIMA ,  Tatsuya HONDA

IPC: H01L29/786 ,  H01L29/26 ,  C01G19/00 ,  H01L29/04

Abstract: An object is to provide a material suitably used for a semiconductor included in a transistor, a diode, or the like. Another object is to provide a semiconductor device including a transistor in which the condition of an electron state at an interface between an oxide semiconductor film and a gate insulating film in contact with the oxide semiconductor film is favorable. Further, another object is to manufacture a highly reliable semiconductor device by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. A semiconductor device is formed using an oxide material which includes crystal with c-axis alignment, which has a triangular or hexagonal atomic arrangement when seen from the direction of a surface or an interface and rotates around the c-axis.

公开(公告)号：US20160284861A1

公开(公告)日：2016-09-29

申请号：US15178949

申请日：2016-06-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Motoki NAKASHIMA ,  Tatsuya HONDA

IPC: H01L29/786 ,  H01L29/04

CPC classification number: H01L29/7869 ,  C01G19/006 ,  C01P2002/72 ,  H01L29/04 ,  H01L29/045 ,  H01L29/26 ,  H01L29/78696

Abstract: An object is to provide a material suitably used for a semiconductor included in a transistor, a diode, or the like. Another object is to provide a semiconductor device including a transistor in which the condition of an electron state at an interface between an oxide semiconductor film and a gate insulating film in contact with the oxide semiconductor film is favorable. Further, another object is to manufacture a highly reliable semiconductor device by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. A semiconductor device is formed using an oxide material which includes crystal with c-axis alignment, which has a triangular or hexagonal atomic arrangement when seen from the direction of a surface or an interface and rotates around the c-axis.

Abstract translation: 目的是提供适用于晶体管，二极管等中所包含的半导体的材料。 另一个目的是提供一种包括晶体管的半导体器件，其中与氧化物半导体膜接触的氧化物半导体膜和栅极绝缘膜之间的界面处的电子态的条件是有利的。 此外，另一个目的是通过给氧化半导体膜用于沟道的晶体管提供稳定的电特性来制造高度可靠的半导体器件。 使用包括具有c轴对准的晶体的氧化物材料形成半导体器件，当从表面或界面的方向观察时，半导体器件具有三角形或六边形的原子排列，并围绕c轴旋转。

公开(公告)号：US20150311348A1

公开(公告)日：2015-10-29

申请号：US14795592

申请日：2015-07-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tatsuya HONDA ,  Masashi TSUBUKU ,  Yusuke NONAKA ,  Takashi SHIMAZU ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/423

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/42384 ,  H01L29/78693

Abstract: The concentration of impurity elements included in an oxide semiconductor film in the vicinity of a gate insulating film is reduced. Further, crystallinity of the oxide semiconductor film in the vicinity of the gate insulating film is improved. A semiconductor device includes an oxide semiconductor film over a substrate, a source electrode and a drain electrode over the oxide semiconductor film, a gate insulating film which includes an oxide containing silicon and is formed over the oxide semiconductor film, and a gate electrode over the gate insulating film. The oxide semiconductor film includes a region in which the concentration of silicon is lower than or equal to 1.0 at. %, and at least the region includes a crystal portion.

Abstract translation: 包含在栅极绝缘膜附近的氧化物半导体膜中的杂质元素的浓度降低。 此外，提高了栅极绝缘膜附近的氧化物半导体膜的结晶度。 半导体器件包括在氧化物半导体膜上的衬底，源电极和漏电极上的氧化物半导体膜，包含含氧化物的氧化物并形成在氧化物半导体膜上的栅极绝缘膜，以及位于氧化物半导体膜上方的栅电极 栅极绝缘膜。 氧化物半导体膜包括硅的浓度低于或等于1.0at。的区域。 ％，并且至少该区域包括晶体部分。

公开(公告)号：US20150243792A1

公开(公告)日：2015-08-27

申请号：US14615122

申请日：2015-02-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tatsuya HONDA ,  Masashi TSUBUKU ,  Yusuke NONAKA ,  Takashi SHIMAZU

IPC: H01L29/786 ,  H01L29/04 ,  H01L29/49

CPC classification number: H01L29/7869 ,  H01L29/045 ,  H01L29/42376 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78696

Abstract: To suppress a decrease in on-state current in a semiconductor device including an oxide semiconductor. A semiconductor device includes an insulating film containing silicon, an oxide semiconductor film over the insulating film, a gate insulating film containing silicon over the oxide semiconductor film, a gate electrode which is over the gate insulating film and overlaps with at least the oxide semiconductor film, and a source electrode and a drain electrode which are electrically connected to the oxide semiconductor film. In the semiconductor device, the oxide semiconductor film which overlaps with at least the gate electrode includes a region in which a concentration of silicon distributed from an interface with the insulating film is lower than or equal to 1.1 at. %. In addition, a concentration of silicon contained in a remaining portion of the oxide semiconductor film except the region is lower than the concentration of silicon contained in the region.

Abstract translation: 抑制包括氧化物半导体的半导体器件中的导通电流的降低。 半导体器件包括含有硅的绝缘膜，绝缘膜上的氧化物半导体膜，在氧化物半导体膜上含有硅的栅极绝缘膜，位于栅极绝缘膜之上并与至少氧化物半导体膜重叠的栅电极 ，以及与氧化物半导体膜电连接的源电极和漏电极。 在半导体器件中，与至少栅电极重叠的氧化物半导体膜包括从绝缘膜的界面分布的硅的浓度低于或等于1.1at的区域。 ％。 此外，除了该区域之外，氧化物半导体膜的剩余部分中所含的硅的浓度低于该区域中所含的硅的浓度。

公开(公告)号：US20150069389A1

公开(公告)日：2015-03-12

申请号：US14540365

申请日：2014-11-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Tatsuya HONDA

IPC: H01L29/786 ,  H01L29/04 ,  H01L29/24

CPC classification number: H01L29/7869 ,  H01L29/045 ,  H01L29/24 ,  H01L29/267 ,  H01L29/7782 ,  H01L29/78609 ,  H01L29/78696

Abstract: One object of the present invention is to provide a structure of a transistor including an oxide semiconductor in a channel formation region in which the threshold voltage of electric characteristics of the transistor can be positive, which is a so-called normally-off switching element, and a manufacturing method thereof. A second oxide semiconductor layer which has greater electron affinity and a smaller energy gap than a first oxide semiconductor layer is formed over the first oxide semiconductor layer. Further, a third oxide semiconductor layer is formed to cover side surfaces and a top surface of the second oxide semiconductor layer, that is, the third oxide semiconductor layer covers the second oxide semiconductor layer.

Abstract translation: 本发明的一个目的是提供在晶体管的电特性的阈值电压可以为正的沟道形成区域中的包括氧化物半导体的晶体管的结构，其是所谓的常关断开关元件， 及其制造方法。 在第一氧化物半导体层上形成具有比第一氧化物半导体层更大的电子亲和力和更小的能隙的第二氧化物半导体层。 此外，形成第三氧化物半导体层以覆盖第二氧化物半导体层的侧表面和顶表面，即，第三氧化物半导体层覆盖第二氧化物半导体层。

公开(公告)号：US20150014684A1

公开(公告)日：2015-01-15

申请号：US14499958

申请日：2014-09-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Akiharu MIYANAGA ,  Tatsuya HONDA

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  G01R27/2623 ,  H01L22/14 ,  H01L29/24 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78696 ,  H01L29/94

Abstract: The field of an oxide semiconductor has been attracted attention in recent years. Therefore, the correlation between electric characteristics of a transistor including an oxide semiconductor layer and physical properties of the oxide semiconductor layer has not been clear yet. Thus, a first object is to improve electric characteristics of the transistor by control of physical properties of the oxide semiconductor layer. A semiconductor device including at least a gate electrode, an oxide semiconductor layer, and a gate insulating layer sandwiched between the gate electrode and the oxide semiconductor layer, where the oxide semiconductor layer has the relative permittivity of equal to or higher than 13 (or equal to or higher than 14), is provided.

Abstract translation: 氧化物半导体领域近年来引起了人们的关注。 因此，包括氧化物半导体层的晶体管的电特性与氧化物半导体层的物理性质之间的相关性尚不清楚。 因此，第一个目的是通过控制氧化物半导体层的物理特性来改善晶体管的电特性。 一种半导体器件，其至少包括栅电极，氧化物半导体层和夹在栅电极和氧化物半导体层之间的栅绝缘层，其中氧化物半导体层的相对介电常数等于或高于13（或相等） 至14以上）。

公开(公告)号：US20140374755A1

公开(公告)日：2014-12-25

申请号：US14483662

申请日：2014-09-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tatsuya HONDA ,  Hiroshi KANEMURA ,  Kengo AKIMOTO ,  Suzunosuke HIRAISHI

IPC: H01L29/24 ,  H01L29/786 ,  H01L29/04

CPC classification number: H01L29/247 ,  H01L29/04 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

Abstract: Provided is an oxide semiconductor film which has more stable electric characteristics and essentially consists of indium zinc oxide. In addition, provided is a highly reliable semiconductor device which has stable electric characteristics by using the oxide semiconductor film. The oxide semiconductor film essentially consisting of indium zinc oxide has a hexagonal crystal structure in which the a-b plane is substantially parallel to a surface of the oxide semiconductor film and a rhombohedral crystal structure in which the a-b plane is substantially parallel to the surface of the oxide semiconductor film.

Abstract translation: 提供了具有更稳定的电特性并且基本上由氧化铟锌组成的氧化物半导体膜。 此外，提供了通过使用氧化物半导体膜具有稳定的电特性的高度可靠的半导体器件。 基本上由氧化铟锌组成的氧化物半导体膜具有六边形晶体结构，其中ab平面基本上平行于氧化物半导体膜的表面，并且其中ab平面基本上平行于氧化物表面的菱方晶体结构 半导体膜。