Abstract:
A method of producing a quantum dot comprising zinc selenide, the method comprising: providing an organic ligand mixture comprising a carboxylic acid compound, a primary amine compound, a secondary amide compound represented by Chemical Formula 1, and a first organic solvent: RCONHR Chemical Formula 1 wherein each R is as defined herein; heating the organic ligand mixture in an inert atmosphere at a first temperature to obtain a heated organic ligand mixture; adding a zinc precursor, a selenium precursor, and optionally a tellurium precursor to the heated organic ligand mixture to obtain a reaction mixture, wherein the zinc precursor does not comprise oxygen; and heating the reaction mixture at a first reaction temperature to synthesize a first semiconductor nanocrystal particle.
Abstract:
A quantum dot-polymer micronized composite includes a first polymer matrix; a plurality of quantum dots dispersed in the first polymer matrix; and at least one of an additive selected from a clay particle embedded in the first polymer matrix and a metal halide dispersed in the first polymer matrix, wherein the quantum dot-polymer micronized composite has an average particle size of less than or equal to about 100 micrometers, a production method thereof, and an article and an electronic device including the micronized composite are provided.
Abstract:
A backlight unit including: a light source; and a photoconversion layer disposed separately from the light source to convert a wavelength of incident light from the light source and thereby provide converted light, wherein the photoconversion layer includes a polymer matrix and a plurality of anisotropic semiconductor nanocrystals disposed in the polymer matrix, and wherein the polymer matrix includes a polymer having a repeating unit represented by Chemical Formula 1: wherein R1 is hydrogen or a methyl group, each R2 is independently hydrogen or a C1 to C3 alkyl group, and R3 is a C2 to C5 alkyl group, wherein the polymer exhibits elasticity at a temperature between a glass transition temperature of the polymer and about 100° C., and wherein the plurality of anisotropic semiconductor nanocrystals are aligned along a long axis thereof for the photoconversion layer to emit polarized light.
Abstract:
A film for a backlight unit including a semiconductor nanocrystal-polymer composite film including a semiconductor nanocrystal and a matrix polymer in which the semiconductor nanocrystal is dispersed, wherein the matrix polymer is a polymer produced by a polymerization of a multifunctional photo-curable oligomer, a mono-functional photo-curable monomer, and a multifunctional photo-curable cross-linking agent, the multifunctional photo-curable oligomer has an acid value of less than or equal to about 0.1 mg of KOH/g, and a content (A1) of a first structural unit derived from the multifunctional photo-curable oligomer, a content (A2) of a second structural unit derived from the mono-functional photo-curable monomer, and a content (A3) of a third structural unit derived from the multifunctional photo-curable cross-linking agent satisfy Equation 1: A1
Abstract:
A backlight unit for a liquid crystal display device including an light emitting diode light source; a light conversion layer disposed apart from the light emitting diode light source, wherein the light conversion layer is configured to convert light emitted from the light emitting diode light source to white light and provide the white light to a liquid crystal panel; and a light guide panel disposed between the light emitting diode light source and the light conversion layer, wherein the light conversion layer includes a semiconductor nanocrystal and a polymer matrix, wherein the semiconductor nanocrystal is coated with a first polymer, and wherein the polymer matrix comprises a thermoplastic second polymer.
Abstract:
A film for a backlight unit including a semiconductor nanocrystal-polymer composite film including a semiconductor nanocrystal and a matrix polymer in which the semiconductor nanocrystal is dispersed, wherein the matrix polymer is a polymer produced by a polymerization of a multifunctional photo-curable oligomer, a mono-functional photo-curable monomer, and a multifunctional photo-curable cross-linking agent, the multifunctional photo-curable oligomer has an acid value of less than or equal to about 0.1 mg of KOH/g, and a content (A1) of a first structural unit derived from the multifunctional photo-curable oligomer, a content (A2) of a second structural unit derived from the mono-functional photo-curable monomer, and a content (A3) of a third structural unit derived from the multifunctional photo-curable cross-linking agent satisfy Equation 1: A1
Abstract:
A backlight unit for a liquid crystal display device, the backlight unit including: an light emitting diode (“LED”) light source; a light conversion layer disposed separate from the LED light source to convert light emitted from the LED light source to white light and to provide the white light to the liquid crystal panel; and a light guide panel disposed between the LED light source and the light conversion layer, wherein the light conversion layer includes a semiconductor nanocrystal and a polymer matrix, and wherein the polymer matrix includes a first polymerized polymer of a first monomer including at least two thiol (—SH) groups, each located at a terminal end of the first monomer, and a second monomer including at least two unsaturated carbon-carbon bonds, each located at a terminal end of the second monomer.
Abstract:
A light source includes a light emitting element which emits light, and a light conversion layer which converts the light emitted from the light emitting element into white light and emits the white light, where the light conversion layer includes a resin and a quantum dot material mixed with the resin, and a red apex of a color region of the white light is positioned in a region of 0.65
Abstract:
An electronic device includes a first electrode and a second electrode facing each other, an emission layer comprising a plurality of quantum dots, wherein the emission layer is disposed between the first electrode and the second electrode; a first charge auxiliary layer disposed between the first electrode and the emission layer; and an optical functional layer disposed on the second electrode on a side opposite the emission layer, wherein the first electrode includes a reflecting electrode, wherein the second electrode is a light-transmitting electrode, wherein a region between the optical functional layer and the first electrode comprises a microcavity structure, and a refractive index of the optical functional layer is greater than or equal to a refractive index of the second electrode.
Abstract:
Disclosed are a semiconductor nanocrystal particle including indium (In), zinc (Zn), and phosphorus (P), wherein a mole ratio of the zinc relative to the indium is greater than or equal to about 25:1, and the semiconductor nanocrystal particle includes a core including a first semiconductor material including indium, zinc, and phosphorus and a shell disposed on the core and including a second semiconductor material including zinc and sulfur, a method of producing the same, and an electronic device including the same. The semiconductor nanocrystal particle emits blue light having a maximum peak emission at a wavelength of less than or equal to about 470 nanometers.