公开(公告)号：US20220115376A1

公开(公告)日：2022-04-14

申请号：US17320711

申请日：2021-05-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Cheonbae Kim ,  Seungjin Kim ,  Dongkyun Lee

IPC: H01L27/108 ,  H01L29/78 ,  H01L49/02

Abstract: A semiconductor device is provided. The semiconductor device includes a plurality of lower electrodes arranged on a semiconductor substrate in a honeycomb structure; and a support connected to the plurality of lower electrodes and defining a plurality of open areas through which the plurality of lower electrodes are exposed. A center point of each of the plurality of open areas is arranged at a center point of a triangle formed by center points of three corresponding neighboring lower electrodes among the plurality of lower electrodes.

公开(公告)号：US11217457B2

公开(公告)日：2022-01-04

申请号：US16863244

申请日：2020-04-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seungjin Kim ,  Byung-Hyun Lee ,  Yoonyoung Choi ,  Tae-Kyu Kim ,  Heesook Cheon ,  Bo-Wo Choi ,  Hyun-Sil Hong

IPC: H01L21/311 ,  H01L21/027 ,  H01L21/48

Abstract: A method of fabricating a semiconductor device including preparing a substrate including a wafer inner region and a wafer edge region, the wafer inner region including a chip region and a scribe lane region, sequentially stacking a mold layer and a supporting layer on the substrate, forming a first mask layer on the supporting layer, the first mask layer including a first stepped region on the wafer edge region, forming a step-difference compensation pattern on the first stepped region, forming a second mask pattern including openings, on the first mask layer and the step-difference compensation pattern, and sequentially etching the first mask layer, the supporting layer, and the mold layer using the second mask pattern as an etch mask to form a plurality of holes in at least the mold layer may be provided.

公开(公告)号：US20210151439A1

公开(公告)日：2021-05-20

申请号：US16908833

申请日：2020-06-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YOONYOUNG CHOI ,  Byunghyun Lee ,  Seungjin Kim ,  Byeongjoo Ku ,  Sangjae Park ,  Hangeol Lee

IPC: H01L27/108 ,  H01L23/532 ,  H01L21/768

Abstract: A semiconductor device includes a substrate, a storage node electrode disposed on the substrate, a dielectric layer at least partially covering the storage node electrode, and a plate electrode dispose on the dielectric layer. The storage node electrode has a pillar shape, and includes a seam disposed therein. The storage node electrode includes a concave side surface disposed at a higher level than the seam.

公开(公告)号：US10691335B2

公开(公告)日：2020-06-23

申请号：US15418087

申请日：2017-01-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sungjun Lee ,  Seungjin Kim ,  Heesoo Son ,  Jaemin Lee ,  Minjung Kim

IPC: G06F3/0488 ,  G06F9/451 ,  G06F3/0482 ,  G06F3/0485 ,  G06F3/041 ,  G06F3/0481

Abstract: An electronic device and method are provided for processing an input using view layers. The electronic device includes a memory, a display, and a processor. The memory stores a first predetermined condition and a second predetermined condition both of which are used for determining whether an input for one or more displayed view objects is valid. The processor displays the view objects using a first view layer and a second view layer at least partially overlapping with the first view layer, and obtains a user input regarding the displayed view object. If a movement of the user input satisfies the first predetermined condition, the processor processes the user input by using the first view layer. If the movement of the user input satisfies the second predetermined condition, the processor processes the user input by using the second view layer.