Abstract:
A light conversion device includes a frame through which incident light is received from a light source and converted light is emitted from the light conversion device, the frame including: an opening through which light of a first color is received from the light source and from which light of a second color is emitted from the light conversion device, and a wall which surrounds the opening, a substrate in the opening and supported by the wall, a light conversion layer which is disposed on the substrate and receives the light of the first color from the light source, the light conversion layer including a light converting particle which converts the light of the first color to the light of the second color, a first inorganic layer disposed on the light conversion layer, and a first organic layer disposed on the first inorganic layer.
Abstract:
Disclosed is a mold frame including a first guide defining the position of a photoconversion layer and at least one of optical sheets disposed on the photoconversion layer, a backlight unit and a liquid crystal display including the same, and the like. The first guide includes a first surface facing the liquid crystal panel, a second surface opposite to the first surface, and a third surface extended from the edge of the first surface to the edge of second surface, wherein at least a portion of the second surface is provided with a strip, and wherein the strip is extended along the edge of the optical sheet or the photoconversion layer to overlap a region adjacent to the edge of the top surface of the optical sheet or adjacent to the edge of the top surface of the photoconversion layer.
Abstract:
A backlight unit for a liquid crystal display device including a liquid crystal panel, includes: a light source including a light-emitting diode (“ED”) which generates and emits light; and a light converting layer between the light source and the liquid crystal panel, spaced apart from the light source, and converting the light from the light source into white light and emitting the white light toward the liquid crystal panel. The light converting layer includes: semiconductor nanocrystals, and a barrier material which restricts penetration of moisture or oxygen.
Abstract:
A semiconductor nanocrystal including an anion of an inorganic metal salt and a first organic ligand bound to a surface of the semiconductor nanocrystal, wherein the first organic ligand includes a substituted or unsubstituted C6 to C30 aromatic ring group and a carboxylate, a substituted or unsubstituted C3 to C30 aromatic hetero cyclic group and a carboxylate, or a combination thereof.
Abstract:
A semiconductor nanocrystal including an anion of an inorganic metal salt and a first organic ligand bound to a surface of the semiconductor nanocrystal, wherein the first organic ligand includes a substituted or unsubstituted C6 to C30 aromatic ring group and a carboxylate, a substituted or unsubstituted C3 to C30 aromatic hetero cyclic group and a carboxylate, or a combination thereof.
Abstract:
A quantum dot device includes: a first electrode and a second electrode facing each other; a quantum dot layer between the first electrode and the second electrode, and an electron auxiliary layer between the quantum dot layer and the second electrode, the electron auxiliary layer including a first nanoparticle and a second nanoparticle which is larger than the first nanoparticle, wherein a work function of the first electrode is greater than a work function of the second electrode, and wherein a difference between a lowest unoccupied molecular orbital energy level of the quantum dot layer and a lowest unoccupied molecular orbital energy level of the electron auxiliary layer is less than about 1.1 electronvolts.
Abstract:
A light emitting device, a method of manufacturing the same, and a display device including the same are disclosed. The light emitting device including a first electrode and a second electrode facing each other, an emission layer disposed between the first electrode and the second electrode, the emission layer including quantum dots, and a charge auxiliary layer disposed between the emission layer and the second electrode, wherein the emission layer includes a first surface facing the charge auxiliary layer and an opposite second surface, the quantum dots include a first organic ligand on a surface of the quantum dots, in the emission layer, an amount of the first organic ligand in a portion adjacent to the first surface is larger than an amount of the first organic ligand in a portion adjacent to the second surface.
Abstract:
A light emitting device, a method of manufacturing the same, and a display device including the same are disclosed. The light emitting device including a first electrode and a second electrode facing each other, an emission layer disposed between the first electrode and the second electrode, the emission layer including quantum dots, and a charge auxiliary layer disposed between the emission layer and the second electrode, wherein the emission layer includes a first surface facing the charge auxiliary layer and an opposite second surface, the quantum dots include a first organic ligand on a surface of the quantum dots, in the emission layer, an amount of the first organic ligand in a portion adjacent to the first surface is larger than an amount of the first organic ligand in a portion adjacent to the second surface.
Abstract:
A light emitting film including a plurality of quantum dots and an electronic device including the same. The plurality of quantum dots constitute at least a portion of a surface of the light emitting film, the plurality of quantum dots do not include cadmium, and the at least a portion of a surface of the light emitting film includes a metal halide bound to at least one quantum dot of the plurality of quantum dots.
Abstract:
A quantum dot including a core including a first semiconductor nanocrystal including zinc, tellurium, and selenium and a semiconductor nanocrystal shell disposed on the core and including zinc, tellurium, selenium, and sulfur, a production method thereof, and an electronic device including the same. The quantum dot is free of cadmium, the quantum dot has a mole ratio of tellurium with respect to selenium of less than or equal to about 0.06:1, a photoluminescence peak wavelength of the quantum dot is greater than or equal to about 450 nm and less than or equal to about 470 nanometers (nm), and a full width at half maximum (FWHM) of a photoluminescence peak of the quantum dot is less than or equal to about 41 nm.