公开(公告)号：US20230402493A1

公开(公告)日：2023-12-14

申请号：US18456069

申请日：2023-08-25

Applicant: Samsung Electronics Co., LTD.

Inventor： Junhee CHOI ,  Kiho Kong ,  Nakhyun Kim ,  Dongho Kim ,  Junghun Park ,  Jinjoo Park ,  Eunsung Lee ,  Joohun Han

IPC: H01L27/15

CPC classification number: H01L27/156

Abstract: A micro light-emitting display apparatus and a method of manufacturing the same are disclosed The micro light-emitting display apparatus includes a first semiconductor layer, an isolation structure provided on the first semiconductor layer and configured to define a plurality of sub-pixels each configured to emit light, a first light-emitting unit including a first active layer provided in a first sub-pixel among the plurality of sub-pixels, and a second semiconductor layer provided on the first active layer, and a second light-emitting unit including a rod semiconductor layer provided in a second sub-pixel among the plurality of sub-pixels, a second active layer provided on the rod semiconductor layer, and a third semiconductor layer provided on the second active layer. The first active layer is configured to emit blue light and the second active layer is configured to emit green light.

公开(公告)号：US11837155B2

公开(公告)日：2023-12-05

申请号：US17725935

申请日：2022-04-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhee Choi ,  Kiho Kong ,  Nakhyun Kim ,  Junghun Park ,  Jinjoo Park ,  Joohun Han

IPC: G09G3/32 ,  H01L27/15 ,  H01L33/10 ,  H01L33/34

CPC classification number: G09G3/32 ,  H01L27/156 ,  H01L33/10 ,  H01L33/346 ,  G09G2300/0452

Abstract: Provided is a display apparatus including a plurality of subpixels and configured to emit light based on each of the plurality of subpixels, the display apparatus including a substrate, a driving layer provided on the substrate and including a driving element which is configured to apply current to the display apparatus, a first electrode electrically connected to the driving layer, a first semiconductor layer provided on the first electrode, an active layer provided on the first semiconductor layer, a second semiconductor layer provided on the active layer, a second electrode provided on the second semiconductor layer, and a reflective layer provided on the second semiconductor layer, wherein light emitted from the active layer resonates between the first electrode and the reflective layer.

公开(公告)号：US11670667B2

公开(公告)日：2023-06-06

申请号：US16922147

申请日：2020-07-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joohun Han ,  Junhee Choi ,  Kiho Kong ,  Jinjoo Park ,  Nakhyun Kim ,  Junghun Park

IPC: H01L33/00 ,  H01L27/15

CPC classification number: H01L27/156 ,  H01L33/0093 ,  H01L33/0095 ,  H01L33/007

Abstract: A micro light emitting diode (LED) device and a method of manufacturing the same are provided. A micro LED device includes a light emitting layer that is provided on a support substrate, a bonding layer, and a driver layer. The light emitting layer includes a stacked structure including a first semiconductor layer, an active layer, and a second semiconductor layer; first and second electrodes provided on a first side and a second side of the stacked structure; and a plurality of light emitting regions. The bonding layer is positioned between the support substrate and the light emitting layer. The drive layer includes a drive element electrically connected to the light emitting layer and is positioned on the light emitting layer to apply power to the plurality of light emitting regions of the light emitting layer.

公开(公告)号：US20220416122A1

公开(公告)日：2022-12-29

申请号：US17529636

申请日：2021-11-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhee CHOI ,  Joohun Han ,  Nakhyun Kim ,  Joosung Kim

IPC: H01L33/20 ,  H01L33/42 ,  H01L33/16

Abstract: A nanorod light emitting device includes a semiconductor light emitting nanorod, and a passivation film surrounding a sidewall of the semiconductor light emitting nanorod and having insulating properties, wherein the passivation film includes an insulating crystalline material having a same crystal structure as a crystal structure of the semiconductor light emitting nanorod.

公开(公告)号：US11424388B2

公开(公告)日：2022-08-23

申请号：US16562791

申请日：2019-09-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhee Choi ,  Kiho Kong ,  Jinjoo Park ,  Joohun Han ,  Kyungwook Hwang ,  Sungjin Kang ,  Junghun Park

IPC: H01L33/46 ,  H01L25/16

Abstract: Provided is a light-emitting device including a substrate, a light-emitting pattern provided on the substrate, a first reflection film provided between the light-emitting pattern and the substrate, a second reflection film provided on a side surface of the light-emitting pattern, and a passivation film provided between the light-emitting pattern and the second reflection film, wherein the second reflection film is electrically connected to the light-emitting pattern, and a portion of light generated from the light-emitting pattern is emitted through an upper surface of the light-emitting pattern after being reflected by at least one of the first reflection film and the second reflection film.

公开(公告)号：US11362247B2

公开(公告)日：2022-06-14

申请号：US16842933

申请日：2020-04-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kiho Kong ,  Junhee Choi ,  Jinjoo Park ,  Joohun Han

IPC: H01L33/64 ,  H01L33/62 ,  H01L33/38 ,  H01L27/15

Abstract: A semiconductor device includes a substrate including a first region and a second region that are arranged in a first direction that is parallel to an upper surface of the substrate; a separation layer provided on the first region of the substrate; a high electron mobility transistor (HEMT) device overlapping the separation layer in a second direction that is perpendicular to the upper surface of the substrate; a light-emitting device provided on the second region of the substrate; and a first insulating pattern covering a side surface of the HEMT device, wherein the first insulating pattern overlaps the separation layer in the second direction.

公开(公告)号：US20210226092A1

公开(公告)日：2021-07-22

申请号：US17138071

申请日：2020-12-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhee Choi ,  Nakhyun Kim ,  Jinjoo Park ,  Joohun Han

IPC: H01L33/24 ,  H01L33/32 ,  H01L25/075

Abstract: A semiconductor light emitting diode (LED) and a method of manufacturing the same are provided. The LED includes a first semiconductor layer; a plurality of active elements spaced apart on the first semiconductor layer and each having a width less than a width of the first semiconductor layer; and a second semiconductor layer disposed on the plurality of active elements.

公开(公告)号：US12100340B2

公开(公告)日：2024-09-24

申请号：US18233148

申请日：2023-08-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhee Choi ,  Kiho Kong ,  Nakhyun Kim ,  Junghun Park ,  Jinjoo Park ,  Joohun Han

IPC: G09G3/32 ,  H01L27/15 ,  H01L33/10 ,  H01L33/34

CPC classification number: G09G3/32 ,  H01L27/156 ,  H01L33/10 ,  H01L33/346 ,  G09G2300/0452

Abstract: Provided is a display apparatus including a plurality of subpixels and configured to emit light based on each of the plurality of subpixels, the display apparatus including a substrate, a driving layer provided on the substrate and including a driving element which is configured to apply current to the display apparatus, a first electrode electrically connected to the driving layer, a first semiconductor layer provided on the first electrode, an active layer provided on the first semiconductor layer, a second semiconductor layer provided on the active layer, a second electrode provided on the second semiconductor layer, and a reflective layer provided on the second semiconductor layer, wherein light emitted from the active layer resonates between the first electrode and the reflective layer.

公开(公告)号：US11916111B2

公开(公告)日：2024-02-27

申请号：US17969420

申请日：2022-10-19

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  iBeam Materials, Inc.

Inventor： Junhee Choi ,  Joohun Han ,  Vladimir Matias

IPC: H01L21/00 ,  H01L29/16 ,  H01L29/04 ,  H01L21/02

CPC classification number: H01L29/1604 ,  H01L21/0254 ,  H01L21/0259 ,  H01L21/02428 ,  H01L21/02488 ,  H01L21/02546 ,  H01L21/02617 ,  H01L29/04

Abstract: A single crystal semiconductor structure includes: an amorphous substrate; a single crystal semiconductor layer provided on the amorphous substrate; and a thin orienting film provided between the amorphous substrate and the single crystal semiconductor layer, wherein the thin orienting film is a single crystal thin film, and the thin orienting film has a non-zero thickness that is equal to or less than 10 times a critical thickness hc.

公开(公告)号：US11677061B2

公开(公告)日：2023-06-13

申请号：US17742092

申请日：2022-05-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kiho Kong ,  Junhee Choi ,  Jinjoo Park ,  Joohun Han

IPC: H01L33/62 ,  H01L33/38 ,  H01L27/15

CPC classification number: H01L33/62 ,  H01L27/156 ,  H01L33/382 ,  H01L2933/0033 ,  H01L2933/0066

Abstract: A semiconductor device includes a substrate including a first region and a second region that are arranged in a first direction that is parallel to an upper surface of the substrate; a separation layer provided on the first region of the substrate; a high electron mobility transistor (HEMT) device overlapping the separation layer in a second direction that is perpendicular to the upper surface of the substrate; a light-emitting device provided on the second region of the substrate; and a first insulating pattern covering a side surface of the HEMT device, wherein the first insulating pattern overlaps the separation layer in the second direction.