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    Semiconductor devices including line identifier
    32.
    发明授权
    Semiconductor devices including line identifier 有权

    公开(公告)号：US11594487B2

    公开(公告)日：2023-02-28

    申请号：US16950031

    申请日：2020-11-17

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Yewon Shin ,  Jaesun Yun ,  Seungjun Lee ,  Jongmin Lee

    IPC: H01L23/528 ,  H01L27/11573 ,  H01L23/522 ,  H01L27/11582

    Abstract: A semiconductor device includes a stacked structure disposed on a substrate. The stacked structure includes a plurality of insulation layers and a plurality of electrode layers alternately stacked in a third direction intersecting with first and second directions. A plurality of channel structures extends through the stacked structure in the third direction. A first wiring group includes a plurality of first horizontal wirings disposed on the stacked structure that are arranged in the first direction and extends in the second direction. A second wiring group includes a plurality of second horizontal wirings disposed on the stacked structure that are arranged in the first direction and extends in the second direction. Each of the plurality of first and second horizontal wirings are connected to corresponding one of the plurality of channel structures. A first line identifier is disposed between the first wiring group and the second wiring group.

    QUANTUM DOTS, A COMPOSITION OR COMPOSITE INCLUDING THE SAME, AND AN ELECTRONIC DEVICE INCLUDING THE SAME
    33.
    发明申请
    QUANTUM DOTS, A COMPOSITION OR COMPOSITE INCLUDING THE SAME, AND AN ELECTRONIC DEVICE INCLUDING THE SAME 有权

    公开(公告)号：US20220298413A1

    公开(公告)日：2022-09-22

    申请号：US17824225

    申请日：2022-05-25

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Tae Gon KIM ,  Shin Ae JUN ,  Taek hoon KIM ,  Hyeyeon YANG ,  Nayoun WON ,  Jongmin Lee ,  Mi Hye LIM

    IPC: C09K11/70 ,  C08F220/38 ,  C09K11/02 ,  C09K11/88 ,  H01L33/00 ,  H01L33/50

    Abstract: Quantum dots and a composite and a display device including the quantum dots. The quantum dots comprise a semiconductor nanocrystal core comprising indium and phosphorous, and optionally zinc, a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell comprising zinc, selenium, and sulfur, wherein the quantum dots are configured to exhibit a maximum photoluminescence peak in a green light wavelength region, and in an ultraviolet-visible (UV-Vis) absorption spectrum of the quantum dots, a ratio A450/Afirst, of an absorption value at 450 nm to an absorption value at a first excitation peak is greater than or equal to about 0.7, and a valley depth (VD) defined by the following equation is greater than or equal to about 0.4: (Absfirst−Absvalley)/Absfirst=VD wherein, Absfirst is an absorption value at the first absorption peak wavelength and Absvalley is an absorption value at a lowest point of the valley adjacent to the first absorption peak, and wherein the maximum photoluminescence peak of the quantum dots has a full width at half maximum of less than or equal to 40 nanometers.

    Quantum dots, a composition or composite including the same, and an electronic device including the same
    34.
    发明授权
    Quantum dots, a composition or composite including the same, and an electronic device including the same 有权

    公开(公告)号：US11352558B2

    公开(公告)日：2022-06-07

    申请号：US16904664

    申请日：2020-06-18

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Tae Gon Kim ,  Shin Ae Jun ,  Taek hoon Kim ,  Hyeyeon Yang ,  Nayoun Won ,  Jongmin Lee ,  Mi Hye Lim

    IPC: C09K11/70 ,  C08F220/38 ,  C09K11/02 ,  C09K11/88 ,  H01L33/00 ,  H01L33/50 ,  B82Y20/00

    Abstract: A quantum dot, and a composite and a display device including the quantum dot. The quantum dot comprises a semiconductor nanocrystal core comprising indium and phosphorous, a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell comprising zinc, selenium, and sulfur, wherein the quantum dot does not comprise cadmium wherein the quantum dot has a maximum photoluminescence peak in a green light wavelength region, and wherein in an ultraviolet-visible (UV-Vis) absorption spectrum of the quantum dot, a ratio A450/Afirst, of an absorption value at 450 nm to an absorption value at a first excitation peak is greater than or equal to about 0.7, and a valley depth (VD) defined by the following equation is greater than or equal to about 0.4: (Absfirst−Absvalley)/Absfirst=VD wherein, Absfirst is an absorption value at the first absorption peak wavelength and Absvalley is an absorption value at a lowest point of the valley adjacent to the first absorption peak.

    Antenna and electronic device including the same
    35.
    发明授权
    Antenna and electronic device including the same 有权

    公开(公告)号：US11228120B2

    公开(公告)日：2022-01-18

    申请号：US16682852

    申请日：2019-11-13

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Youngman Song ,  Wooyoung Jeong ,  Gwangun Oh ,  Youngmoon Park ,  Jongmin Lee

    IPC: H01Q21/29 ,  H01Q1/22 ,  H01Q21/00

    Abstract: An electronic device is provided. The electronic device includes a housing, and a printed circuit board (PCB) disposed in an inner space of the housing and includes at least one first conductive contact exposed at least partially and electrically connected to a wireless communication circuit; and an antenna structure disposed on the PCB, including at least one first antenna element and at least one second conductive contact exposed at least partially and electrically connected to the at least one first antenna element. The at least one first conductive contact is electrically connected to the at least one second conductive contact when the antenna structure is combined with the PCB. The wireless communication circuit is configured to form a directional beam through the at least one first antenna element.

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