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31.
公开(公告)号:US20170331050A1
公开(公告)日:2017-11-16
申请号:US15591259
申请日:2017-05-10
Applicant: Samsung Electronics Co., Ltd.
Inventor: Tadao YAGI , Xavier BULLIARD , Hyesung CHOI , Rie SAKURAI , Hiromasa SHIBUYA , Youn Hee LIM , Sung Young YUN , Gae Hwang LEE , Kwang Hee LEE , Dong-Seok LEEM
IPC: H01L51/00 , H01L51/44 , H01L51/42 , C07D421/04 , H01L27/30 , C07D513/04 , C07D471/04 , C07D421/14 , C07D421/06
CPC classification number: H01L51/0072 , C07D421/00 , C07D421/04 , C07D421/06 , C07D421/14 , C07D471/04 , C07D513/04 , H01L27/307 , H01L51/0053 , H01L51/0061 , H01L51/0062 , H01L51/0067 , H01L51/0071 , H01L51/424 , H01L51/441 , H01L51/447
Abstract: A compound of Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device including the same are disclosed: In Chemical Formula 1, each substituent is the same as defined in the detailed description.
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公开(公告)号:US20170330911A1
公开(公告)日:2017-11-16
申请号:US15664182
申请日:2017-07-31
Applicant: Samsung Electronics Co., Ltd.
Inventor: Kwang Hee LEE , Gae Hwang LEE , Sung Young YUN , Dong-Seok LEEM , Xavier BULLIARD , Yong Wan JIN
IPC: H01L27/146
CPC classification number: H01L27/14621 , H01L27/14645 , H01L27/14647 , H01L27/14685
Abstract: An electronic device may include at least one image sensor that includes a plurality of photo-sensing devices, a photoelectric device on one side of the semiconductor substrate and configured to selectively sense first visible light, and a plurality of color filters on separate photo-sensing devices. The plurality of color filters may include a first color filter configured to selectively transmit a second visible light that is different from the first visible light and a second color filter transmitting first mixed light including the second visible light. The electronic device may include multiple arrays of color filters. The electronic device may include different photoelectric devices on the separate arrays of color filters. The different photoelectric devices may be configured to sense different wavelength spectra of light.
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公开(公告)号:US20170141149A1
公开(公告)日:2017-05-18
申请号:US15155658
申请日:2016-05-16
Applicant: Samsung Electronics Co., Ltd.
Inventor: Kwang Hee LEE , Gae Hwang Lee , Sung Young Yun , Dong-Seok Leem , Xavier Bulliard , Yong Wan Jin
IPC: H01L27/146
CPC classification number: H01L27/14621 , H01L27/14645 , H01L27/14647 , H01L27/14685
Abstract: An electronic device may include at least one image sensor that includes a plurality of photo-sensing devices, a photoelectric device on one side of the semiconductor substrate and configured to selectively sense first visible light, and a plurality of color filters on separate photo-sensing devices. The plurality of color filters may include a first color filter configured to selectively transmit a second visible light that is different from the first visible light and a second color filter transmitting first mixed light including the second visible light. The electronic device may include multiple arrays of color filters. The electronic device may include different photoelectric devices on the separate arrays of color filters. The different photoelectric devices may be configured to sense different wavelength spectra of light.
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公开(公告)号:US20170141143A1
公开(公告)日:2017-05-18
申请号:US15283743
申请日:2016-10-03
Applicant: Samsung Electronics Co., Ltd.
Inventor: Yong Wan JIN , Kwang Hee LEE , Gae Hwang LEE , Kyung Bae PARK , Dong-Seok LEEM , Yeong Suk CHOI
IPC: H01L27/146
CPC classification number: H01L27/146 , H01L27/14647 , H01L27/14692
Abstract: An image sensor includes a semiconductor substrate integrated with at least one of a first photo-sensing device that may sense a first wavelength spectrum of visible light and a second photo-sensing device that may sense second wavelength spectrum of visible light, and a third photo-sensing device on the semiconductor substrate that may selectively sense third wavelength spectrum of visible light in a longer wavelength spectrum of visible light than the first wavelength spectrum of visible light and the second wavelength spectrum of visible light. The first photo-sensing device and the second photo-sensing device may overlap with each other in a thickness direction of the semiconductor substrate.
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公开(公告)号:US20170069690A1
公开(公告)日:2017-03-09
申请号:US15255649
申请日:2016-09-02
Applicant: Samsung Electronics Co., Ltd.
Inventor: Rie SAKURAI , Hiromasa SHIBUYA , Tadao YAGI , Kwang Hee LEE , Takkyun RO , Sung Young YUN , Gae Hwang LEE , Dong-Seok LEEM , Seon-Jeong LIM , Xavier BULLIARD , Yong Wan JIN , Yeong Suk CHOI , Hye Sung CHOI
IPC: H01L27/30 , C07D471/04 , C07D403/04 , C07D403/14 , H01L51/00 , C07D487/04
CPC classification number: H01L27/307 , C07D403/04 , C07D403/14 , C07D471/04 , C07D487/04 , H01L51/0032 , H01L51/0053 , H01L51/006 , H01L51/0061 , H01L51/0067 , H01L51/4253
Abstract: An organic photoelectric device includes a first electrode and a second electrode facing each other, and an active layer between the first electrode and the second electrode, wherein the active layer includes an n-type semiconductor compound that is transparent in a visible ray region and represented by Chemical Formula 1, and a p-type semiconductor compound having a maximum absorption wavelength in a wavelength region of about 500 nm to about 600 nm of a visible ray region.
Abstract translation: 有机光电装置包括第一电极和彼此面对的第二电极以及第一电极和第二电极之间的有源层,其中有源层包括在可见光区域中透明的n型半导体化合物, 通过化学式1和在可见光区域的约500nm至约600nm的波长范围具有最大吸收波长的p型半导体化合物。
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公开(公告)号:US20170040544A1
公开(公告)日:2017-02-09
申请号:US15295382
申请日:2016-10-17
Applicant: Samsung Electronics Co., Ltd.
Inventor: Kwang Hee LEE , Gae Hwang LEE , Dong-Seok LEEM , Tadao YAGI , Xavier BULLIARD , Yong Wan JIN , Kyung Bae PARK , Sungdong SUH
IPC: H01L51/00
CPC classification number: H01L51/0053 , H01L27/307 , H01L51/0067 , H01L51/0072 , H01L51/0077 , H01L51/008 , H01L51/424 , H01L51/4253
Abstract: An organic photoelectronic device includes a first electrode and a second electrode facing each other, and an active layer between the first electrode and the second electrode, the active layer including a first compound having a maximum absorption wavelength of about 500 nm to about 600 nm in a visible ray region and a transparent second compound in a visible ray region. The transparent second compound has an absorption coefficient in a thin film state of less than or equal to about 0.1×105 cm−1 in a wavelength region of about 450 nm to about 700 nm.
Abstract translation: 有机光电子器件包括彼此面对的第一电极和第二电极以及第一电极和第二电极之间的有源层,所述有源层包括第一化合物,其具有约500nm至约600nm的最大吸收波长 可见光区域和可见光区域中的透明第二化合物。 透明第二化合物在约450nm至约700nm的波长范围内具有小于或等于约0.1×10 5 cm -1的薄膜状态的吸收系数。
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37.
公开(公告)号:US20160093675A1
公开(公告)日:2016-03-31
申请号:US14631438
申请日:2015-02-25
Applicant: Samsung Electronics Co., Ltd.
Inventor: Gae Hwang LEE , Kwang Hee LEE , Dong-Seok LEEM , Yong Wan JIN
CPC classification number: H01L27/307 , H01L27/14625 , H01L27/14632 , H01L27/14647 , H01L51/441
Abstract: An image sensor including a semiconductor substrate integrated with a plurality of photo-sensing devices and a nanopattern layer on the semiconductor substrate, the nanopattern layer having a plurality of nanopatterns, wherein a single nanopattern of the plurality of nanopatterns corresponds to a single photo-sensing device in the plurality of photo-sensing devices.
Abstract translation: 一种图像传感器,包括与多个感光装置集成的半导体衬底和半导体衬底上的纳米图案层,所述纳米图案层具有多个纳米图案,其中所述多个纳米图案中的单个纳米图案对应于单个光感测 装置在多个感光装置中。
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公开(公告)号:US20160065913A1
公开(公告)日:2016-03-03
申请号:US14660383
申请日:2015-03-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Kyung Bae PARK , Gae Hwang LEE , Kwang Hee LEE , Yong Wan JIN , Chul Joon HEO
IPC: H04N9/04
CPC classification number: H04N5/374 , H01L27/14621 , H01L27/14627 , H01L27/14636 , H01L27/14647 , H04N9/045
Abstract: A stacked image sensor includes a substrate including a first photoelectric conversion device, a second photoelectric conversion device and a first color signal storing device disposed between the first photoelectric conversion device and the second photoelectric conversion device. A second color filter and a third color filter are disposed at positions corresponding to the first photoelectric conversion device and the second photoelectric conversion device on the substrate. A conductive connecting member is disposed between the second color filter and the third color filter. A first color sensing photoelectric conversion device is disposed on the second color filter, the third color filter, and the conductive connecting member. The cross-sectional area of conductive connecting member is at least greater than the cross-sectional area of the first color signal storing device.
Abstract translation: 堆叠图像传感器包括:基板,包括第一光电转换装置,第二光电转换装置和设置在第一光电转换装置和第二光电转换装置之间的第一颜色信号存储装置。 第二滤色器和第三滤色器设置在与基板上的第一光电转换元件和第二光电转换元件对应的位置上。 导电连接构件设置在第二滤色器和第三滤色器之间。 第一彩色感测光电转换装置设置在第二滤色器,第三滤色器和导电连接件上。 导电连接构件的横截面积至少大于第一颜色信号存储装置的横截面面积。
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39.
公开(公告)号:US20160020401A1
公开(公告)日:2016-01-21
申请号:US14597050
申请日:2015-01-14
Applicant: Samsung Electronics Co., Ltd.
Inventor: Xavier BULLIARD , Tadao YAGI , Sakurai RIE , Kwang Hee LEE , Dong-Seok LEEM , Hyesung CHOI , Seon-Jeong LIM , Yong Wan JIN
IPC: H01L51/00 , H01L27/30 , C07D495/14
CPC classification number: H01L51/0058 , C07D495/14 , H01L27/307 , H01L51/0052 , H01L51/0067 , H01L51/0069 , H01L51/0074 , H01L51/424
Abstract: A compound is represented by Chemical Formula 1: X1-T-X2 wherein T is a substituted or unsubstituted fused thiophene moiety, and each of X1 and X2 are independently an organic group including an alkenylene group and an electron withdrawing group.
Abstract translation: 化合物由化学式1表示:X1-T-X2,其中T是取代或未取代的稠合噻吩部分,X1和X2各自独立地为包括亚烯基和吸电子基团的有机基团。
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公开(公告)号:US20140070183A1
公开(公告)日:2014-03-13
申请号:US13866323
申请日:2013-04-19
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Kyung Bae PARK , Kyu Sik KIM , Jung Woo KIM , Kwang Hee LEE , Dong-Seok LEEM , Seon-Jeong LIM
CPC classification number: H01L51/442 , H01L27/307 , H01L51/5234 , Y02E10/549
Abstract: An organic photoelectric device includes a first electrode, a metal nanolayer contacting one side of the first electrode, an active layer on one side of the metal nanolayer, and a second electrode on one side of the active layer. An image sensor includes the organic photoelectric device.
Abstract translation: 有机光电装置包括第一电极,与第一电极的一侧接触的金属纳米层,金属纳米层的一侧上的活性层和在活性层的一侧上的第二电极。 图像传感器包括有机光电装置。
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